CIRP Encyclopedia of Production Engineering

2014 Edition
| Editors: The International Academy for Production Engineering, Luc Laperrière, Gunther Reinhart

Eutectic Bonding

  • Ludger Overmeyer
  • Yixiao Wang
  • Tim Wolfer
Reference work entry



Eutectic bonding is a bonding method based on the melting of a metallic intermediate layer of eutectic alloy composition which is used for chip bonding and wafer bonding.

Theory and Application

Eutectic bonding (also called eutectic solder) is a low-temperature bonding method which is used in microelectronics manufacturing for chip bonding and to connect wafer with other wafers, glass substrates, or metal housings. In microsystem technology, the method also finds application in the generation of cavities and the production of MEMS. Here it is, however, compared to direct (fusion) bonding and anodic bonding rarely used (Dziuban 2006).

The method is based on the melting of a metallic intermediate layer of eutectic alloy composition which is applied between the substrates to be joined. This layer provides an electrically and heat conductive connection after the solidification. In the specific eutectic mixing ratio, the metal layer melts at a...

This is a preview of subscription content, log in to check access.


  1. Baum M, Jia C, Haubold M, Wiemer M, Schneider A, Rank H, Trautmann A, Gessner T (2010) Eutectic wafer bonding for 3-D integration. 3rd electronics system integration technology conference (ESTC), BerlinCrossRefGoogle Scholar
  2. Crnogorac F, Birringer R, Dauskardt R, Pease F (2009) Aluminum-germanium eutectic bonding for 3D integration. IEEE international conference on 3D system integration 3DIC, San FranciscoCrossRefGoogle Scholar
  3. Dziuban JA (2006) Bonding in microsystem technology. Springer, New YorkGoogle Scholar
  4. Mitchell J, Lahiji GR, Najafi K (2006) Gold silicon eutectic wafer bonding technology for vacuum packaging. University of Michigan/WIMS poster on the reliability of eutectic vacuum packaging using nanogetters, Engineering Research Center for Integrated Wireless Microsystems, Electrical Engineering and Computer Science Department, University of Michigan, Ann ArborGoogle Scholar
  5. Okamoto H, Massalski TB (1990) Au-Si (gold-silicon). In: Massalski T, Okamoto H, Subramanian P, Kacprzak L (eds) Binary alloy phase diagrams, vol 1. ASM International, Materials Park, pp 428–431Google Scholar
  6. Wang Q, Choa SH, Kim WB, Hwang JS, Ham SJ, Moon CY (2006) Application of Au-Sn eutectic bonding in hermetic radio-frequency microelectromechanical system wafer level packaging. J Electron Mater 35(3):425–432CrossRefGoogle Scholar
  7. Wolffenbuttel RF, Wise KD (1994) Low-temperature silicon wafer-to-wafer bonding using gold at eutectic temperature. Sens Actuat A 43:223–229CrossRefGoogle Scholar
  8. Wolffenbuttel RF (1997) Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond. Sens Actuat A: Phys 62:680–686CrossRefGoogle Scholar

Copyright information

© CIRP 2014

Authors and Affiliations

  1. 1.Institute of Transport and Automation TechnologyLeibniz Universität Hannover, Laser Zentrum Hannover e.V.GarbsenGermany
  2. 2.Institute of Transport and Automation TechnologyLeibniz Universität HannoverGarbsenGermany