Abstract
In this updated and expanded review, the thermoluminescence (TL) of porous silicon (PS) is discussed as both a method for characterization of its electronic states and as a dosimeter of ionizing radiations. The observed shape of the TL peaks in PS at low temperatures (4–250 K) is explained by a quasi-continuous spectrum of electron traps with activation energy in range of 0.03–0.4 eV. The high-energy peaks observed at 100–300 °C are associated with radiation-induced defects E` (≡ Si•) and nonbridging oxygen hole centers (≡Si-O•) that are generated in the insulating SiOx layer which covers the PS surface. TL of PS is not currently used for radiation dosimetry due to the low activation energies of the traps and strong fading. Nevertheless, related PS materials (like oxidized PS, silicon nanoparticles in solid matrix, various nanocomposites of scintillation materials in PS) are considered as promising for dosimetry due to high luminescence quantum yield, emission in the visible region, and their biocompatibility that allows to create in vivo dosimetry systems of high spatial resolution. Commercial scintillator-PS composites are also under development.
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Skryshevsky, V. (2018). Thermoluminescence of Porous Silicon. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-71381-6_35
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