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Characterization of Porous Silicon by EPR and ENDOR

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Handbook of Porous Silicon

Abstract

The results of EPR and ENDOR studies of Si nanocrystals in porous silicon layers are reviewed. The dominant type of paramagnetic centers in porous silicon, prepared in different conditions, is the Si dangling bond at the Si/SiO2 interface (the “Pb center”). Pb center concentration is very sensitive to vacuum heating, oxidation, and hydrogen treatment. The Pb center − 1H, 19F atoms distances have been estimated in the dipole-dipole approximation. Silicon dangling bonds, similar to those in amorphous silicon, are observed in porous silicon layers during vacuum annealing at temperatures higher than 300–400 °C. Free electron paramagnetic states (EX and E/ center defects) are also observed in this material. EPR spectroscopy can be successfully used for investigating singlet oxygen generation in porous silicon layers.

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Authors and Affiliations

  1. Department of Physics, Moscow State University, 119991, Moscow, Russia

    Elizaveta A. Konstantinova

  2. National Research Center “Kurchatov Institute”, 123182, Moscow, Russia

    Elizaveta A. Konstantinova

  3. Faculty of nano-, bio-, information and cognitive technologies, Moscow Institute of Physics and Technology, 141700, Dolgoprudny, Russia

    Elizaveta A. Konstantinova

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  1. Elizaveta A. Konstantinova
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Correspondence to Elizaveta A. Konstantinova .

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Editors and Affiliations

  1. Malvern Hills Science Park, Chief Scientific Officer, Intrinsiq Mate, Malvern, Worcestershire, United Kingdom

    Leigh Canham

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Konstantinova, E.A. (2017). Characterization of Porous Silicon by EPR and ENDOR. In: Canham, L. (eds) Handbook of Porous Silicon. Springer, Cham. https://doi.org/10.1007/978-3-319-04508-5_121-1

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  • DOI: https://doi.org/10.1007/978-3-319-04508-5_121-1

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  • Print ISBN: 978-3-319-04508-5

  • Online ISBN: 978-3-319-04508-5

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