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Planar Defects: Crystal Interfaces

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Abstract

Aspects already discussed of stacking faults on {111} planes in fcc crystals and the emission of dislocations from grain boundaries in fcc polycrystals discussed in chapter “Line Defects: Dislocations in Crystalline Materials” have shown the dissociation of dislocations forming varying extensions of stacking faults. In fcc materials, stacking faults are characterized by partial dislocations, and similar dislocation configurations are characteristic of twin boundaries on {111} planes. Grain boundaries can also be shown to be composed of dislocation arrays, and interfaces separating different crystal regimes (interphase boundaries) as well as the accommodation of misfit and misfit strains between different phases can also be viewed as misfit dislocation arrays. In this chapter, these planar arrays are discussed in terms of their fundamental structures or microstructures and the corresponding or associated interfacial free energies. In some cases, where applicable, disclination concepts are also applied.

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Copyright information

© Springer International Publishing AG 2017

Authors and Affiliations

  1. 1.Department of Metallurgical, Materials and Biomedical EngineeringThe University of Texas at El PasoEl PasoUSA

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