Abstract
Atmospheric-pressure plasma manufacturing is a very promising technique fabricate optical components and substrates for electronic devices with high form accuracy and high efficiency. The thickness correction of SOI and quartz crystal wafers by numerically controlled atmospheric-pressure plasma etching, which named numerically controlled plasma chemical vaporization machining (NC-PCVM), enabled us to obtain thickness uniformity with nanometer-level accuracy without introducing subsurface electronic defects. A numerically controlled sacrificial oxidation process using a multielectrode array system demonstrated its potential for realizing the high-throughput thickness correction of SOI wafers. A 4H-SiC (0001) surface, which is a difficult-to-machine material because of its hardness and chemical inertness, was processed by plasma-assisted dry polishing using a CeO2 abrasive, and an atomically smooth step and terrace structure without lattice strain was obtained.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
Adan AO, Kaneko S, Naka T, Urabe D, Higashi K, Kagisawa A (1996) Channel-drain lateral profile engineering for advanced CMOS on ultra-thin SOI technology. IEEE Int SOI Conf :100–101
Azuma K, Kishi A, Tanigawa M, Kaneko S, Naka T, Ishihama A, Iguchi K, Sakiyama K (1995) Application of Ti salicide process on ultra-thin SIMOX wafer. IEEE Int SOI Conf :30–31
Hornetz B, Michel H-J, Halbritter J (1994) ARXPS studies of SiO2-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(001) surfaces. J Mater Res 9:3088–3094
International Technology Roadmap for Semiconductors (2011) Edition, Table FEP10. http://www.itrs.net/Links/2011ITRS/2011Chapters/2011FEP.pdf
Kamisaka S, Yoshinaga K, Sano Y, Mimura H, Matsuyama S, Yamauchi K (2010) Improvement of thickness uniformity of silicon on insulator layer by numerically controlled sacrificial oxidation using atmospheric-pressure plasma with electrode array system. Jpn J Appl Phys 49:08JJ04
Lucca DA, Herrmann K, Klopfstein MJ (2010) Nanoindentation: measuring methods and applications. Ann CIRP 59:803–819
Mori Y, Yamamura K, Sano Y (2000a) The study of fabrication of the X-ray mirror by numerically controlled plasma chemical vaporization machining: development of the machine for the X-ray mirror fabrication. Rev Sci Instrum 71:4620–4626
Mori Y, Yamauchi K, Yamamura K, Sano Y (2000b) Development of plasma chemical vaporization machining. Rev Sci Instrum 71:4627–4632
Mori Y, Yamamura K, Sano Y (2004) Thinning of silicon-on-insulator wafers by numerically controlled plasma chemical vaporization machining. Rev Sci Instrum 75:942–946
Nagaura Y, Yokomizo S (1999) Manufacturing method of high frequency quartz oscillators over 1 GHz. In: Proceedings of the 1999 I.E. international frequency control symposium Besancon, France, pp 425–428
Neslen CL, Mitchel WC, Hengehold RL (2001) Effects of process parameter variations on the removal rate in chemical mechanical polishing of 4H-SiC. J Electroact Mater 30:1271–1275
Oliver WC, Pharr GM (1992) An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments. J Mater Res 7:1564–1583
Saddow SE, Schattner TE, Brown J, Grazulis L, Mahalingam K, Landis G, Bertke R, Mitchel WC (2001) Effects of substrate surface preparation on chemical vapor deposition growth of 4H-SiC epitaxial layers. J Electroact Mater 30:228–234
Sano Y, Yamamura K, Mimura H, Yamauchi K, Mori Y (2007) Fabrication of ultrathin and highly uniform silicon on insulator by numerically controlled plasma chemical vaporization machining. Rev Sci Instrum 78:086102
Sano Y, Masuda T, Mimura H, Yamauchi K (2008a) Ultraprecision finishing technique by numerically controlled sacrificial oxidation. J Cryst Growth 310:2173–2177
Sano Y, Masuda T, Kamisaka S, Mimura H, Matsuyama S, Yamauchi K (2008b) Improvement of thickness uniformity of SOI by numerically controlled sacrificial oxidation using atmospheric-pressure plasma. IEEE Int SOI Conf :165–166
Sano Y, Kamisaka S, Yoshinaga K, Mimura H, Matsuyama S, Yamauchi K (2010) Numerically controlled sacrificial plasma oxidation using array of electrodes for improving thickness uniformity of SOI. IEEE Int SOI Conf :68–69
Shorey AB, Kwong KM, Johnson KM, Jacobs SD (2000) Nanoindentation hardness of particles used in magnetorheological finishing (MRF). Appl Opt 39:5194–5204
Ueda M, Shibahara M, Zettsu N, Yamamura K (2010) Effect of substrate heating in thickness correction of quartz crystal wafer by plasma chemical vaporization machining. Key Eng Mater 447–448:218–222
Yamamura K, Shimada S, Mori Y (2008) Damage-free improvement of thickness uniformity of quartz crystal wafer by plasma chemical vaporization machining. Ann CIRP 59:567–570
Yamamura K, Morikawa T, Ueda M, Nagano M, Zettsu N, Shibahara M (2009) High efficient damage-free correction of thickness distribution of quartz crystal wafer by atmospheric pressure plasma etching. IEEE Trans Ultrason Ferroelectr Freq Control 56:1128–1130
Yamamura K, Takiguchi T, Ueda M, Deng H, Hattori NA, Zettsu N (2011) Plasma assisted polishing of single crystal SiC for obtaining atomically flat strain-free surface. Ann CIRP 60:571–574
Zhou L, Audurier V, Pirouz P (1997) Chemomechanical polishing of silicon carbide. J Electrochem Soc 144:L161–L163
Author information
Authors and Affiliations
Corresponding author
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2015 Springer-Verlag London
About this entry
Cite this entry
Yamamura, K., Sano, Y. (2015). Plasma-Based Nanomanufacturing Under Atmospheric Pressure. In: Nee, A. (eds) Handbook of Manufacturing Engineering and Technology. Springer, London. https://doi.org/10.1007/978-1-4471-4670-4_68
Download citation
DOI: https://doi.org/10.1007/978-1-4471-4670-4_68
Published:
Publisher Name: Springer, London
Print ISBN: 978-1-4471-4669-8
Online ISBN: 978-1-4471-4670-4
eBook Packages: EngineeringReference Module Computer Science and Engineering