Encyclopedia of Nanotechnology

Living Edition
| Editors: Bharat Bhushan

Nanowire FET Simulations Based on the Nonequilibrium Green’s Function Formalism

  • Klaus Michael Indlekofer
  • Joachim Knoch
Living reference work entry
DOI: https://doi.org/10.1007/978-94-007-6178-0_100943-1



The nonequilibrium Green’s function formalism (NEGF) is a quantum kinetic approach to nonequilibrium electronic transport in nanoelectronic devices. In principle, it is an exact many-body quantum mechanical approach which is able to describe Coulomb interaction and scattering effects in particular. In numerical implementations for the simulation of realistic device structures, however, the Coulomb interaction is often taken into account in terms of a mean field approximation, combined with a decoupled self-energy approximation.

Nanowire Field Effect Transistor

The continued downscaling of the geometric dimensions of metal-oxide-semiconductor field-effect transistors (MOSFET) [1] has been propelled by Moore’s law over the last 40 years, i.e., by the promise of an exponential growth of the number of MOSFETs that fit on a single chip, by a strongly increasing circuit...

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© Springer Science+Business Media Dordrecht 2015

Authors and Affiliations

  1. 1.Hochschule RheinMain University of Applied SciencesInstitute of Microtechnologies (IMtech)RüsselsheimGermany
  2. 2.Institute of Semiconductor ElectronicsRWTH Aachen UniversityAachenGermany