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Porous Silicon Formation by Stain Etching

  • Kurt W. KolasinskiEmail author
Reference work entry

Abstract

Spontaneous electroless etching of silicon surfaces with hydrofluoric acid and chemical oxidant-based solutions is often referred to as “stain etching” due to the color change it imparts. The field is comprehensively reviewed with regard to the etching mechanisms and the range of chemical oxidants explored to date.

Keywords

Porous Silicon Etch Rate Hole Injection High Etch Rate Porous Silicon Film 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.Department of ChemistryWest Chester UniversityWest ChesterUSA

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