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Ohmic and Rectifying Contacts to Porous Silicon

  • Jayita KanungoEmail author
  • Sukumar Basu
Living reference work entry

Abstract

Porous silicon (PS) is a promising material for photonic, optoelectronic, and sensor devices. However, achieving stable metallic contacts to porous silicon has been a challenge. Oxidation of the Si-Hx bond on porous silicon surface on exposure to aerial atmosphere is the main reason of the instability. This review highlights the attempts made to modify the PS surface and make stable ohmic and rectifying contacts. Data on different metals, alloys, and conducting polymers utilized to treat the surface of porous silicon prior to the formation of ohmic and rectifying contacts are provided in tabular form. The methods deployed to deposit the contact materials on porous silicon are also summarized. The performance of noble metal treatment of porous silicon surface by electroless deposition is highlighted.

Keywords

Porous Silicon Ohmic Contact Contact Material Porous Silicon Layer Specific Contact Resistance 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

References

  1. Anderson RC, Muller RS, Tobias CW (1991) Investigation of electrical properties of porous silicon. J Electrochem Soc 138:3406–3411CrossRefGoogle Scholar
  2. Anderson RC, Muller RS, Tobias CW (1993) Chemical surface modification of porous silicon. J Electrochem Soc (USA) 140:1393–1396CrossRefGoogle Scholar
  3. Andersson HA, Thungstrom G, Nilsson H (2008) Electroless deposition and silicidation of Ni contacts into p-type porous silicon. J Porous Mater 15:335–341CrossRefGoogle Scholar
  4. Andsager D, Hilliard J, Nayfeh MH (1994) Behavior of porous silicon emission spectra during quenching by immersion in metal ion solutions. Appl Phys Lett 64:1141–1143CrossRefGoogle Scholar
  5. Angelescu A, Kleps I (1998) Metallic contacts on porous silicon layers. In: IEEE conference, pp 447–450. SinaiaGoogle Scholar
  6. Archer M, Fauchet PM (2003) Electrical sensing of DNA hybridization in porous silicon layers. Phys Status Solidi A 198:503–507CrossRefGoogle Scholar
  7. Arenas MC, Hu H, Rıo JA et al (2006) Electrical properties of porous silicon/polypyrrole heterojunctions. Sol Energy Mater Sol Cells 90:2413–2420CrossRefGoogle Scholar
  8. Astrova EV, Ratnikov VV, Remenyuk AD et al (2002) Strains and crystal lattice defects arising in macroporous silicon under oxidation. Semiconductors 36:1033–1042CrossRefGoogle Scholar
  9. Banihashemian SM, Hajghassem H, Erfanian A et al (2010) Observation and measurement of negative differential resistance on PtSi Schottky junctions on porous silicon. Sensors 10:1012–1020. doi:10.3390/s100201012CrossRefGoogle Scholar
  10. Barillaro G, Nannini A, Pieri F (2003) APSFET: a new, porous silicon based gas sensing devices. Sens Actuators B 93:263–270CrossRefGoogle Scholar
  11. Basu S, Kanungo J (2011) Nanocrystalline porous silicon. In: Basu S (ed) Crystalline silicon – properties and uses. InTech – Open Access Publisher, Rijeka, Croatia. ISBN 978-953-307-587-7CrossRefGoogle Scholar
  12. Beckmann KH (1965) Investigation of the chemical properties of stain films on silicon by means of infrared spectroscopy. Surf Sci 3:314–332CrossRefGoogle Scholar
  13. Bhattacharya E, Ramesh P, Kumar CS (2000) Studies on gold/porous silicon/crystalline silicon junctions. J Porous Mater 7:299–301CrossRefGoogle Scholar
  14. Bsiesy A, Vial JC, Gaspard F et al (1991) Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers. Surf Sci 254:195–200CrossRefGoogle Scholar
  15. Canham L (ed) (1997) Properties of porous silicon. INSPEC – The Institution of Electrical Engineers, LondonGoogle Scholar
  16. Cherif A, Jomni S, Hannachi R et al (2013) Electrical investigation of the Al/porousSi/p + -Si heterojunction. Phys B 409:10–15CrossRefGoogle Scholar
  17. Deresmes D, Marissael V, Stievenard D et al (1995) Electrical behaviour of aluminium-porous silicon junctions. Thin Solid Films 255:258–261CrossRefGoogle Scholar
  18. Dhar S, Chakrabarti S (1996) Electroless nickel plated contacts on porous silicon. Appl Phys Lett 68(10):1392–1393CrossRefGoogle Scholar
  19. Diligenti A, Nannini A, Pennelli G et al (1996) Electrical characterization of metal Schottky contacts on luminescent porous silicon. Thin Solid Films 276:179–182CrossRefGoogle Scholar
  20. Dimitrov DB (1995) Current-voltage characteristics of porous silicon layer. Phys Rev B 51:1562–1566CrossRefGoogle Scholar
  21. Fan J, Wan M, Zhu D (1998) Studies on the rectifying effect of the heterojunction between porous silicon and water-soluble copolymer of polyaniline. Synth Metals 95:119–124CrossRefGoogle Scholar
  22. Gallach D, Torres-Costa V, García-Pelayo L et al (2012) Properties of bilayer contacts to porous silicon. Appl Phys A 107:293–300CrossRefGoogle Scholar
  23. Ghosh S, Hong K, Lee C (2002) Structural and physical properties of thin copper films deposited on porous silicon. Mater Sci Eng B 96:53–59CrossRefGoogle Scholar
  24. Giebel G, Pavesi L (1995) About the I-V characteristics of metal porous silicon diode. Phys Status Solidi (A) 151:355–361CrossRefGoogle Scholar
  25. Halliday DP, Holland ER, Eggleston JM et al (1996) Electroluminescence from porous silicon using a conducting polyaniline contact. Thin Solid Films 276:299–302CrossRefGoogle Scholar
  26. Han Z, Shi J, Tao H et al (1994) Photovoltaic effect of a metal/porous silicon/silicon structure. Phys Lett A 186:265–268CrossRefGoogle Scholar
  27. Ichinohe T, Nozaki S, Morisaki H (1996) Visible light emission from the porous alloyed PtlSi contacts. Thin Solid Films 281–282:610–612CrossRefGoogle Scholar
  28. Jeske M, Schultze JW, Thonissen M et al (1995) Electrodeposition of metals into porous silicon. Thin Solid Films 255:63–66CrossRefGoogle Scholar
  29. Kanungo J, Pramanik C, Bandopadhyay S et al (2006) Improved contacts on a porous silicon layer by electroless nickel plating and copper thickening. Semicond Sci Technol 21:964–970CrossRefGoogle Scholar
  30. Kanungo J, Maji S, Saha H et al (2009a) Stable aluminium ohmic contact to surface modified porous silicon. Solid-State Electron 53:663–668CrossRefGoogle Scholar
  31. Kanungo J, Saha H, Basu S (2009b) Room temperature metal-insulator –semiconductor (MIS) hydrogen sensors based on chemically surface modified porous silicon. Sens Actuators B 140:65–72CrossRefGoogle Scholar
  32. Kanungo J, Selegard L, Vahlberg C et al (2010) XPS study of palladium sensitized nano porous silicon thin film Bull. Mater Sci 33:647–651Google Scholar
  33. Karacali T, Cakmak B, Efeoglu H (2003) Aging of porous silicon and the origin of blue shift. Opt Express 11:1237–1242CrossRefGoogle Scholar
  34. Lauerhaas JM, Sailor MJ (1993) The effects of halogen exposure on the photoluminescence of porous silicon. Mater Res Soc Symp Proc (USA) 298:259–263CrossRefGoogle Scholar
  35. Lees IN, Lin H, Canaria CA, Miskelly GM et al (2003) Chemical stability of porous silico surfaces electrochemically modified with functional alkyl species. Langmuir 19:9812–9817CrossRefGoogle Scholar
  36. Li K, Diaz DC, He Y et al (1994) Electroluminescence from porous silicon with conducting polymer film contacts. Appl Phys Lett 64(18):2394–2396CrossRefGoogle Scholar
  37. Lin JC, Tsai WC, Lee WS (2006) The improved electrical contact between a metal and porous silicon by deposition using a supercritical fluid. Nanotechnology 17:2968–2971CrossRefGoogle Scholar
  38. Lue JT, Chang CS, Chen CY et al (1999) The bistable switching property of a porous-silicon Schottky barrier diode during the charging period. Thin Solid Films 339:294–298CrossRefGoogle Scholar
  39. Maji S, Das RD, Jana M et al (2010) Formation of ohmic contact by pre-annealing of shallow nanopores in macroporous silicon and its characterization. Solid-State Electron 54:568–574CrossRefGoogle Scholar
  40. Mandal NP, Sharma A, Agarwal SC (2006) Improved stability of nanocrystalline porous silicon after coating with a polymer. J Appl Phys 100:024308–024311CrossRefGoogle Scholar
  41. Martıin-Palma RJ, Perez-Rigueiro J, Guerrero-Lemus R et al (1999) Ageing of aluminum electrical contacts to porous silicon. J Appl Phys 85(1):583–586CrossRefGoogle Scholar
  42. Matsumoto T, Mimura H, Koshida N et al (1998) The density of states in silicon nanostructures determined by space-charge-limited current measurements. J Appl Phys 84(11):6157–6161CrossRefGoogle Scholar
  43. Neamen DA (2003) Semiconductor physics and devices: basic principles. Tsinghua University Press, BeijingGoogle Scholar
  44. Petrova EA, Bogoslovskaya KN, Balagurov LA et al (2000) Room temperature oxidation of porous silicon in air. Mater Sci Eng B 69–70:152–156CrossRefGoogle Scholar
  45. Petrova-Koch V, Muschik T, Kux A et al (1992) Rapid-thermal-oxidized porous Si–the superior photoluminescent Si. Appl Phys Lett 61:943–945CrossRefGoogle Scholar
  46. Porter LA, Choi HC, Ribbe AE et al (2002) Controlled electroless deposition of noble metal nanoparticle films on germanium surfaces. Nano Lett 2:1067–1071CrossRefGoogle Scholar
  47. Rabinal MK, Mulimani BG (2007) Transport properties of molecularly stabilized porous silicon schottky junctions. New J Phys 9:440–448CrossRefGoogle Scholar
  48. Rossi AM, Amato G, Camarchia V et al (2001) High-quality porous-silicon buried waveguides. Appl Phys Lett 78(20):3003–3005CrossRefGoogle Scholar
  49. Shen Y, Wan M (1998) Heterojunction diodes of soluble conducting polypyrrole with porous silicon. Synth Metals 98:147–152CrossRefGoogle Scholar
  50. Simons AJ, Cox TI, Uren MJ et al (1995) The electrical properties of porous silicon produced from n + silicon substrates. Thin Solid Films 255:12–15CrossRefGoogle Scholar
  51. Skryshevsky VA, Strikha VI, Mamikin AV et al (1998) Availability of current -voltage characteristics for porous silicon gas sensors, Discrete gas sensor. Paper presented at eorosensors XII 13–16 Sept 277–280Google Scholar
  52. Slobodchikov SV, Salikhov Kh M, Russu EV (1998) Current transport in porous p-Si and Pd-porous Si structures. Semiconductors 32(9):960–962CrossRefGoogle Scholar
  53. Slobodchikov SV, Goryachev DN, Salikhovand Kh M et al (1999) Electrical and photoelectric characteristics of n-Si/porous silicon/Pd diode structures and the effect of gaseous hydrogen on them. Semiconductors 33(3):339–342CrossRefGoogle Scholar
  54. Steiner P, Kozlowski F, Wielunski M et al (1994) Enhanced blue-light emission from an indium-treated porous silicon device. Jpn J Appl Phys 33:6075–6077CrossRefGoogle Scholar
  55. Stievenard D, Deresmes D (1995) Are electrical properties of an aluminium-porous silicon junction governed by dangling bonds? Appl Phys Lett 67:1570–1572CrossRefGoogle Scholar
  56. Sze SM (1985) Semiconductor devices: physics and technology. Wiley, New YorkGoogle Scholar
  57. Tsai C, Li KH, Sarathi J et al (1991) Thermal treatment studies of the photoluminescence intensity of porous silicon. Appl Phys Lett 59:2814–2816CrossRefGoogle Scholar
  58. Vikulov VA, Strikha VI, Skryshevsky VA (2000) Electrical features of the metal–thin porous silicon–silicon structure. J Phys D Appl Phys 33:1957–1964CrossRefGoogle Scholar
  59. Vinod PN (2005) Specific contact resistance of the porous silicon and silver metal Ohmic contact structure. Semicond Sci Technol 20:966–971CrossRefGoogle Scholar
  60. Vinod PN (2009) Specific contact resistance and carrier tunneling properties of the silver metal/porous silicon/p-Si ohmic contact structure. J Alloys Compd 470:393–396CrossRefGoogle Scholar
  61. Vinod PN (2013) The fire-through processed screen-printed Ag thick film metal contacts formed on an electrochemically etched porous silicon antireflection coating of silicon solar cells. RSC Adv 3:3618–3622CrossRefGoogle Scholar
  62. Zimin SP, Bragin AN (1999) Conductivity relaxation in coated porous silicon after annealing. Semiconductors 33(4):457–460CrossRefGoogle Scholar
  63. Zimin SP, Komarov EP (1998) Influence of short-term annealing on the conductivity of porous silicon and the transition resistivity of an aluminum-porous silicon contact. Tech Phys Lett 24(3):226–228CrossRefGoogle Scholar
  64. Zimin SP, Kuznetsov VS, Prokaznikov AV (1995) Electrical characteristics of aluminum contacts to porous silicon. Appl Surf Sci 91:355–358CrossRefGoogle Scholar

Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.IC Design & Fabrication Center, Department of Electronics & Telecommunication EngineeringJadavpur UniversityKolkataIndia

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