Ohmic and Rectifying Contacts to Porous Silicon

  • Jayita KanungoEmail author
  • Sukumar Basu
Living reference work entry


Porous silicon (PS) is a promising material for photonic, optoelectronic, and sensor devices. However, achieving stable metallic contacts to porous silicon has been a challenge. Oxidation of the Si-Hx bond on porous silicon surface on exposure to aerial atmosphere is the main reason of the instability. This review highlights the attempts made to modify the PS surface and make stable ohmic and rectifying contacts. Data on different metals, alloys, and conducting polymers utilized to treat the surface of porous silicon prior to the formation of ohmic and rectifying contacts are provided in tabular form. The methods deployed to deposit the contact materials on porous silicon are also summarized. The performance of noble metal treatment of porous silicon surface by electroless deposition is highlighted.


Porous Silicon Ohmic Contact Contact Material Porous Silicon Layer Specific Contact Resistance 
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Copyright information

© Springer International Publishing Switzerland 2014

Authors and Affiliations

  1. 1.IC Design & Fabrication Center, Department of Electronics & Telecommunication EngineeringJadavpur UniversityKolkataIndia

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