Fabrication of Hydrogenated Diamond Metal–Insulator–Semiconductor Field-Effect Transistors
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Diamond is regarded as a promising material for fabrication of high-power and high-frequency electronic devices due to its remarkable intrinsic properties, such as wide band gap energy, high carrier mobility, and high breakdown field. Meanwhile, since diamond has good biocompatibility, long-term durability, good chemical inertness, and a large electron-chemical potential window, it is a suitable candidate for the fabrication of biosensors. Here, we demonstrate the fabrication of hydrogenated diamond (H-diamond) based metal–insulator–semiconductor field-effect transistors (MISFETs). The fabrication is based on the combination of laser lithography, dry-etching, atomic layer deposition (ALD), sputtering deposition (SD), electrode evaporation, and lift-off techniques. The gate insulator is high-k HfO2 with a SD/ALD bilayer structure. The thin ALD-HfO2 film (4.0 nm) acts as a buffer layer to prevent the hydrogen surface of the H-diamond from plasma discharge damage during the SD-HfO2 deposition. The growth of H-diamond epitaxial layer, fabrication of H-diamond MISFETs, and electrical property measurements for the MISFETs is demonstrated. This chapter explains the fabrication of H-diamond FET based biosensors.
Key wordsH-diamond MISFET high-k SGFET Biosensor
This work was supported by International Center for Young Scientists (ICYS) of the National Institute for Materials Science (NIMS). It was also supported in part by the Tokodai Institute for Elemental Strategy (TIES), Advanced Environmental Materials, Green Network of Excellence (GRENE), and a Fundamental Research A (No. 25249054) project sponsored by the Ministry of Education, Culture, Sports, and Technology (MEXT), Japan. The authors thank Dr. M. Y. Liao and Dr. M. Imura in the Wide bandgap Materials Group, and Mr. H. Oosato, Dr. E. Watanabe, and Dr. D. Tsuya in the Nanotfabrication Platform of NIMS for their helps on the fabrication of the H-diamond MISFETs.