Intersubband Transitions in Quantum Wells: Physics and Devices

1. Front Matter

   Pages i-ix

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2. Intersubband Emission and Lasers

   1. Short (λ∼3.4μM) and Long (λ∼11.5μM) Wavelength Room Temperature Quantum Cascade Lasers

      • Jérôme Faist, Federico Capasso, Deborah L. Sivco, Albert L. Hutchinson, Sung-Nee G. Chu, Alfred Y. Cho et al.

      Pages 1-8

   2. Quantum Fountain Intersubband Laser at 15.5 μm Wavelength in GaAs/AlGaAs Quantum Wells.

      • François H. Julien, Olivier Gauthier-Lafaye, Philippe Boucaud, Sébastien Sauvage, Jean-Michel Lourtioz, Véronique Thierry-Mieg et al.

      Pages 9-16

   3. Quantum Cascade Electroluminescence in the GaAs/AIGaAs Material System

      • Peter Kruck, Manfred Helm, Gottfried Strasser, Lubos Hvozdara, Erich Gornik

      Pages 17-21

   4. Phase-Matched Second-Harmonic and Cascade Laser Mid-IR Sources

      • J. R. Meyer, I. Vurgaftman, L. J. Olafsen, E. H. Aifer, W. W. Bewley, C. L. Felix et al.

      Pages 22-29

   5. Mid-Infrared Intersubband Emission and Lasing in Optically Pumped Coupled Quantum Wells Structures

      • Yoav Lavon, Amir Sa’ar, Francois H. Julien, Jean-Pierre Leburton, Richard Planel

      Pages 30-36

   6. Intersubband Electroluminescence from GaAs/AIGaAs Triple Barrier and Quantum Cascade Structures

      • Y. B. Li, J. W. Cockburn, M. S. Skolnick, J. P. Duck, M. J. Birkett, L. R. Wilson et al.

      Pages 37-42

3. Quantum Well Infrared Photodetector Physics

   1. Quantum Well Infrared Photodetectors: Device Physics and Light Coupling

      • Sumith Bandara, Sarath Gunapala, John Liu, Jason Mumolo, Edward Luong, Winn Hong et al.

      Pages 43-49

   2. QWIP Performance and Polarization Selection Rule

      • H. C. Liu, M. Buchanan, Z. R. Wasilewski

      Pages 50-59

   3. Electric Field Distribution and Low Power Nonlinear Photo-Response of Quantum Well Infrared Photodetectros

      • A. Sa’ar, C. Mermelstein, H. Schneider, C. Schoenbein, M. Walther

      Pages 60-67

   4. Intersubband Transitions of Normal Incidence N-Type Direct Band Gap Quantum Well Structures(invited)

      • Meimei Z. Tidrow, Stephen W. Kennerly, Xudong Jiang, Jung-Chi Chiang, Sheng S. Li, Victor Ryzhii

      Pages 68-75

   5. Calculation and Photoresponse Measurements of the Long-Wavelength IR Absorption in P-Type GaAs/AlGaAs Quantum Wells and Type-II InAs/InGaSb Superlattices

      • Frank Szmulowicz, Gail J. Brown, William C. Mitchel, H. C. Liu, L. Li, M. Buchanan et al.

      Pages 76-83

   6. Optical Response Induced by Intersubband Transitions in Quantum Wells: The Role of Multiple Reflections

      • M. Załużny, C. Nalewajko

      Pages 84-90

   7. The Nature of Unintentional Deep Level Clusters Responsible for Persistent Photoconductivity Effect in GaAs/AlGaAs MQW Photodetectors

      • Victor Ovsyuk, Michael Dem’yanenko, Valery Shashkin, Alexander Toropov

      Pages 91-96

   8. Lateral Physical Effects in Quantum Well Infrared Photodetectors

      • M. Ershov

      Pages 97-102

4. Quantum Well and Quantum Dot Infrared Detectors

   1. Strain Layer Quantum Well Infrared Photodetectors(invited)

      • Sheng S. Li, J. C. Chiang, J. Chu, X. D. Jiang, M. Z. Tidrow

      Pages 103-109

   2. Normal Incident Two Color Voltage Tunable InGaAs Quantum Well Infrared Photodetectors

      • Shiang-Yu Wang, Chien-Ping Lee

      Pages 110-115

   3. Corrugated Quantum Well Infrared Photodetectors and Transistors

      • K. K. Choi, C. J. Chen, W. H. Chang, D. C. Tsui

      Pages 116-121

   4. Normal-Incidence p-Type Si/SiGe Mid-Infrared Detector with Background-Limited Performance up to 85 K

      • Peter Kruck, Manfred Helm, Günther Bauer, Joachim F. Nützel, Gerhard Abstreiter

      Pages 122-126

   5. Far-Infrared (λc=28.6 μm) GaAs/AlGaAs Quantum Well Photodetectors

      • A. G. U. Perera, W. Z. Shen, S. G. Matsik, H. C. Liu, M. Buchanan, W. J. Schaff

      Pages 127-132

The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.

• detection
• detector
• emission
• infrared
• laser
• Modulation
• physics
• quantum dot
• quantum wells
• structures
• temperature
• transitions

• Dept. of Electrical and Computer Engineering, University of Florida, Gainesville, USA

  Sheng S. Li

• Dept. of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan R.O.C

  Yan-Kuin Su

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