Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates Robert F. DavisT. GehrkeR. Grober OriginalPaper 01 December 2001 Article: 14
Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen Meghan L. CaldwellP. G. Van PattenHugh H Richardson OriginalPaper 01 December 2001 Article: 13
On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation F. ShahedipourB. W. Wessels OriginalPaper 01 December 2001 Article: 12
Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory Huajie ChenR. M. FeenstraD. W. Greve OriginalPaper 01 December 2001 Article: 11
Electrical Profiles in GaN/Al2O3 Layers with Conductive Interface Regions D. C. LookJ. E. HoelscherG. D. Via OriginalPaper 01 December 2001 Article: 10
Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy Kyoyeol LeeKeunho Auh OriginalPaper 01 December 2001 Article: 9
Room Temperature Ohmic contact on n-type GaN using plasma treatment Ho Won JangJong Kyu KimJong-Lam Lee OriginalPaper 01 December 2001 Article: 8
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates Lianghong LiuB. LiuJ. H. Edgar OriginalPaper 01 December 2001 Article: 7
Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers S. StepanovW. N. WangY. G. Shreter OriginalPaper 01 December 2001 Article: 6
New Technique for Sublimation Growth of AlN Single Crystals Y. ShiB. LiuMartin Kuball OriginalPaper 01 December 2001 Article: 5
High-temperature structural behavior of Ni/Au Contact on GaN(0001) Chong Cook KimJong Kyu KimP. Ruterana OriginalPaper 01 December 2001 Article: 4
High Temperature Elastic Constant Prediction of Some Group III-Nitrides Robert R. ReeberKai Wang OriginalPaper 01 December 2001 Article: 3
Electronic Properties of Ga(In)NAs Alloys I. A. BuyanovaW. M. ChenB. Monemar OriginalPaper 01 December 2001 Article: 2
Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN E. M. GoldysM. GodlewskiB. Monemar OriginalPaper 01 December 2001 Article: 1