Growth Of High Quality GaN Thin Films By MBE On Intermediate-temperature Buffer Layers W.K. FongC. F. ZhuCharles Surya OriginalPaper 12 December 2020 Article: 12
A Review of Dry Etching of GaN and Related Materials S.J. PeartonR. J. ShulFan Ren OriginalPaper 12 December 2020 Article: 11
Low Temperature Nitridation Combined With High Temperature Buffer Annealing for High Quality GaN Grown by Plasma-Assisted MBE Gon NamkoongW. Alan DoolittleStuart R. Stock OriginalPaper 12 December 2020 Article: 10
Solar-Blind AlGaN Heterostructure Photodiodes J.D. BrownJizhong LiJ.F. Schetzina OriginalPaper 12 December 2020 Article: 9
Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN. P. de MierryB. BeaumontR. Odedra OriginalPaper 12 December 2020 Article: 8
Preparation of Sapphire for High Quality III-Nitride Growth J. CuiA. SunH. Morkoç OriginalPaper 12 December 2020 Article: 7
UV-Specific (320-365 nm) Digital Camera Based On a 128×128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes J.D. BrownJ. BoneySubash Krishnankutty OriginalPaper 12 December 2020 Article: 6
Defect Trapping and Annealing for Transition Metal Implants in Group III Nitrides K. LorenzR. ViandenJ.M. Zavada OriginalPaper 12 December 2020 Article: 5
Improvements in Bis(cyclopentadienyl)magnesium Purity as Determined with Gas Chromatography-Mass Spectroscopy Michael E. Bartram OriginalPaper 12 December 2020 Article: 4
Current limitation after pinch-off in AlGaN/GaN FETs R. DietrichA. WiesztK. Thonke OriginalPaper 12 December 2020 Article: 3
The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1−xN quantum wells N. A. ShapiroPiotr PerlinEicke R. Weber OriginalPaper 12 December 2020 Article: 2
Free-carrier effects and optical phonons in GaNAs/GaAs superlattice heterostructures measured by infrared spectroscopic ellipsometry J. ŠikM. SchubertV. Gottschalch OriginalPaper 12 December 2020 Article: 1