Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures B. MonemarJ. P. BergmanI. Akasaki OriginalPaper 15 December 1999 Article: 16
Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride B.J. Skromme OriginalPaper 15 December 1999 Article: 15
Strain relaxation in GaN layers grown on porous GaN sublayers M. MynbaevaA. TitkovV.A. Dmitriev OriginalPaper 01 December 1999 Article: 14
New buffer sublayers with crystal structure of cubic syngony for growing the heteroepitaxial films of nitride compounds of type AIIIBV on sapphire substrates M.J. KotelyanskiiI.M. KotelyanskiiV.B. Kravchenko OriginalPaper 01 December 1999 Article: 13
Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures A. N. CartwrightPaul M. SweeneyMichael Kneissl OriginalPaper 01 December 1999 Article: 12
Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry M. SchubertA. KasicFerdinand Scholz OriginalPaper 01 December 1999 Article: 11
Synthesis and Growth of Gallium Nitride by the Chemical Vapor Reaction Process (CVRP) M. CallahanM. HarrisJ. Bailey OriginalPaper 01 December 1999 Article: 10
Visible-Blind UV Digital Camera Based On a 32 × 32 Array of GaN/AlGaN p-i-n Photodiodes J.D. BrownZhonghai YuSubash Krishnankutty OriginalPaper 01 December 1999 Article: 9
Growth and Device Performance of GaN Schottky Rectifiers Jen-Inn ChyiC.-M. LeeR. G. Wilson OriginalPaper 01 December 1999 Article: 8
Photoluminescence measurements on GaN/AlGaN modulation doped quantum wells J. DalforsJ. P. BergmanI. Akasaki OriginalPaper 01 December 1999 Article: 7
The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia A. N. AlexeevB. A. BorisovA. L. Ter-Martirosyan OriginalPaper 01 December 1999 Article: 6
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor R. A. TalalaevE. V. YakovlevHolger Juergensen OriginalPaper 01 December 1999 Article: 5
Novel approach to simulation of group-III nitrides growth by MOVPE S. Yu. KarpovV. G. ProkofyevYu. N. Makarov OriginalPaper 01 December 1999 Article: 4
A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C John T TorvikM. LeksonoB. Van Zeghbroeck OriginalPaper 01 December 1999 Article: 3
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer H. MarchandN. ZhangU. K. Mishra OriginalPaper 01 December 1999 Article: 2
Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System Y. ParkB. J. KimT.I. Kim OriginalPaper 01 December 1999 Article: 1
