1. InGaN/GaN/AlGaN-Based Leds and Laser Diodes

   • S. Nakamura
   • M. Senoh
   • T. Mukai

   OriginalPaper 12 December 2020 Pages: 1 - 17

   

2. Material Properties of GaN in the Context of Electron Devices

   • H. Morkoç
   • R. Cingolani
   • K. Shenai

   OriginalPaper 12 December 2020 Pages: 18 - 26

   

3. Near Defect Free GaN Substrates

   • S. Porowski

   OriginalPaper 12 December 2020 Pages: 27 - 37

   

4. Dry and Wet Etching for Group III–Nitrides

   • I. Adesida
   • C. Youtsey
   • G. Bulman

   OriginalPaper 12 December 2020 Pages: 38 - 48

   

5. Contact Issues of GaN Technology

   • D. Qiao
   • L.S. Yu
   • Z. Liliental-Weber

   OriginalPaper 12 December 2020 Pages: 49 - 56

   

6. Pyroelectric and Piezoelectric Properties of GaN-Based Materials

   • R. Gaska
   • M. S. Shur
   • A. D. Bykhovski

   OriginalPaper 12 December 2020 Pages: 57 - 68

   

7. Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers

   • Daniel Hofstetter
   • Robert L. Thornton
   • Clarence Dunnrowicz

   OriginalPaper 12 December 2020 Pages: 69 - 74

   

8. Mechanisms of Optical Gain in Cubic GaN and InGaN

   • J. Holst
   • A. Hoffmann
   • K. Lischka

   OriginalPaper 12 December 2020 Pages: 75 - 80

   

9. Carrier Dynamics of Abnormal Temperature-Dependent Emission Shift in MOCVD-Grown

   • Yong-Hoon Cho
   • B. D. Little
   • S. P. DenBaars

   OriginalPaper 12 December 2020 Pages: 81 - 86

   

10. Mechanism for Radiative Recombination in In_0.15Ga_0.85N/GaN Multiple Quantum Well Structures

    • B Monemar
    • J P Bergman
    • I Akasaki

    OriginalPaper 12 December 2020 Pages: 87 - 92

    

11. Spectroscopic Studies in InGaN Quantum Wells

    • S. F. Chichibu
    • T. Sota
    • S. Nakamura

    OriginalPaper 12 December 2020 Pages: 93 - 105

    

12. Composition Dependence of the Band Gap Energy of In_xGa_1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition

    • J. Wagner
    • A. Ramakrishnan
    • K.-H. Bachem

    OriginalPaper 12 December 2020 Pages: 106 - 111

    

13. Optical Gain Spectra in InGaN/GaN Quantum Wells with the Compositional Fluctuations

    • Takeshi Uenoyama

    OriginalPaper 12 December 2020 Pages: 112 - 117

    

14. Hydrogen and Nitrogen Ambient Effects on Epitaxial Lateral Overgrowth (ELO) of GaN VIA Metalorganic Vapor-Phase Epitaxy (Movpe)

    • Kazuyuki Tadatomo
    • Yoichiro Ohuchi
    • Kazumasa Hiramatsu

    OriginalPaper 12 December 2020 Pages: 118 - 123

    

15. Pendeo-Epitaxy of Gallium Nitride and Aluminum Nitride Films and Heterostructures on Silicon Carbide Substrate

    • T. Gehrke
    • K. J. Linthicum
    • R. F. Davis

    OriginalPaper 12 December 2020 Pages: 124 - 129

    

16. Piezoelectric Effects in GaN/AlGaN Multiple Quantum Wells Probed by Picosecond Time-Resolved Photoluminescence

    • H. S. Kim
    • J. Y. Lin
    • H. Morkoç

    OriginalPaper 12 December 2020 Pages: 130 - 135

    

17. Nitridation of GaAs (001)-2×4 Surface Studied by Auger-Electron Spectroscopy

    • Igor Aksenov
    • Yoshinobu Nakada
    • Hajime Okumura

    OriginalPaper 12 December 2020 Pages: 136 - 141

    

18. Temperature Effect on the Quality of A1N thin Films

    • Margarita P. Thompson
    • Andrew R. Drews
    • Gregory W. Auner

    OriginalPaper 12 December 2020 Pages: 142 - 148

    

19. Epitaxial Growth and Structural Characterization of Single Crystalline ZnGeN₂

    • L.D. Zhu
    • P.H. Maruska
    • L.O. Bouthillette

    OriginalPaper 12 December 2020 Pages: 149 - 154

    

20. Cubic GaN Heteroepitaxy on Thin-SiC-Covered Si(001)

    • Yuichi Hiroyama
    • Masao Tamura

    OriginalPaper 12 December 2020 Pages: 155 - 160

    

21. Influence of Active Nitrogen Species on the Nitridation Rate of Sapphire

    • A.J. Ptak
    • K.S. Ziemer
    • T.H. Myers

    OriginalPaper 12 December 2020 Pages: 161 - 166

    

22. Structural Study of GaN(As,P) Layers Grown on (0001) GaN by Gas Source Molecular Beam Epitaxy

    • Tae-Yeon Seong
    • In-Tae Bae
    • C.W. Tu

    OriginalPaper 12 December 2020 Pages: 167 - 172

    

23. GaN Growth by Remote Plasma MOCVD: Chemistry and Kinetics by Real Time Ellipsometry

    • M. Losurdo
    • P. Capezzuto
    • G. Bruno

    OriginalPaper 12 December 2020 Pages: 173 - 178

    

24. Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

    • Zhigang Mao
    • Stuart McKernan
    • Scott A. McPherson

    OriginalPaper 12 December 2020 Pages: 179 - 184

    

25. Electrical and Photoelectrical Characterization of Deep Defects In Cubic GaN on GaAs

    • M. Lisker
    • A. Krtschil
    • K. Lischka

    OriginalPaper 12 December 2020 Pages: 185 - 190

    

26. Pressure Dependence of Optical Transitions in InGaN/GaN Multiple Quantum Wells

    • W. Shan
    • J.W. Ager III
    • D.P. Bour

    OriginalPaper 12 December 2020 Pages: 191 - 196

    

27. Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

    • T. Paskova
    • E.B. Svedberg
    • B. Monemar

    OriginalPaper 12 December 2020 Pages: 197 - 202

    

28. Characterization of Be-Implanted GaN Annealed at High Temperatures

    • C. Ronning
    • K.J. Linthicum
    • R.F. Davis

    OriginalPaper 12 December 2020 Pages: 203 - 208

    

29. Thermal Residual Stress Modeling in AlN and GaN Multi Layer Samples

    • Kai Wang
    • Robert R. Reeber

    OriginalPaper 12 December 2020 Pages: 209 - 214

    

30. Strong piezoelectric effects in unstrained GaN quantum wells

    • R. Langer
    • J. Simon
    • M. Godlewski

    OriginalPaper 12 December 2020 Pages: 215 - 220

    

31. Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films

    • L.H. Robins
    • A.J. Paul
    • N.A. El-Masry

    OriginalPaper 12 December 2020 Pages: 221 - 226

    

32. Growth of Oriented Thick Films of Gallium Nitride from the Melt

    • Jeffrey S. Dyck
    • Kathleen Kash
    • John C. Angus

    OriginalPaper 12 December 2020 Pages: 227 - 232

    

33. P- and N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers

    • D.J. As
    • T. Simonsmeier
    • B.K. Meyer

    OriginalPaper 12 December 2020 Pages: 233 - 238

    

34. Cubic InGaN Grown by MOCVD

    • J.B. Li
    • Hui Yang
    • Y.T. Wang

    OriginalPaper 12 December 2020 Pages: 239 - 243

    

35. Optical Investigations of AlGaN on GaN Epitaxial Films

    • G. Steude
    • T. Christmann
    • I. Akasaki

    OriginalPaper 12 December 2020 Pages: 244 - 249

    

36. Extended Defects in GaN: a Theoretical Study

    • J. Elsner
    • Th. Frauenheim
    • M. I. Heggie

    OriginalPaper 12 December 2020 Pages: 250 - 256

    

37. Electron Beam Induced Impurity Electro-Migration in Unintentionally Doped GaN

    • M. Toth
    • K. Fleischer
    • M. R. Phillips

    OriginalPaper 12 December 2020 Pages: 257 - 262

    

38. Statistical Analysis of Local Composition and Luminescence in InGaN Grown by Molecular Beam Epitaxy

    • S. Einfeldt
    • T. Böttcher
    • J. Christen

    OriginalPaper 12 December 2020 Pages: 263 - 268

    

39. Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of Gan Films Via the Technique of Pendeo-Epitaxy

    • D. B. Thomson
    • T. Gehrke
    • R. F. Davis

    OriginalPaper 12 December 2020 Pages: 269 - 274

    

40. Pendeo-Epitaxy - A New Approach for Lateral Growth of Gallium Nitride Structures

    • Tsvetanka S. Zheleva
    • Scott A. Smith
    • Robert F. Davis

    OriginalPaper 12 December 2020 Pages: 275 - 280

    

41. Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD

    • Z. Y. Xie
    • C. H. Wei
    • C. Ignatiev

    OriginalPaper 12 December 2020 Pages: 281 - 286

    

42. High Quality Hydrothermal ZnO Crystals

    • M. Suscavage
    • M. Harris
    • C. W. Litton

    OriginalPaper 12 December 2020 Pages: 287 - 292

    

43. Disordering of InGaN/GaN Superlattices after High-Pressure Annealing

    • M.D. McCluskey
    • L.T. Romano
    • J. Jun

    OriginalPaper 12 December 2020 Pages: 293 - 298

    

44. Synthesis of Nitrogen-Rich GaNAs Semiconductor Alloys and Arsenic-Doped GaN by Metalorganic Chemical Vapor Deposition

    • M. Gherasimova
    • B. Gaffey
    • J. Spear

    OriginalPaper 12 December 2020 Pages: 299 - 304

    

45. Si Delta Doped GaN Grown by Low-Pressure Metalorganic Chemical Vapor Deposition

    • Jong-Hee Kim
    • Gye Mo Yang
    • Hyung Jae Lee

    OriginalPaper 12 December 2020 Pages: 305 - 309

    

46. Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE

    • R. Lantier
    • A. Rizzi
    • R. Cingolani

    OriginalPaper 12 December 2020 Pages: 310 - 315

    

47. Effects of Susceptor Geometry on Gan Growth on Si(111) with a New MOCVD Reactor

    • Yungeng Gao
    • Daniel A. Gulino
    • Ryan Higgins

    OriginalPaper 12 December 2020 Pages: 316 - 321

    

48. Structure of AlN on Si (111) Deposited with Metal Organic Vapor Phase Epitaxy

    • Eric Rehder
    • M. Zhou
    • T. F. Kuech

    OriginalPaper 12 December 2020 Pages: 322 - 326

    

49. Influence of Doping on the Lattice Dynamics of Gallium Nitride

    • A. Kaschner
    • H. Siegle
    • D. Hommel

    OriginalPaper 12 December 2020 Pages: 327 - 332

    

50. Molecular Beam Epitaxy of High Quality InGaN Alloys Using Ammonia: Optical and Structural Properties

    • Nicolas Grandjean
    • Jean Massies
    • Serge Barrière

    OriginalPaper 12 December 2020 Pages: 333 - 338