Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents F. ManyakhinA. KovalevA. E. Yunovich OriginalPaper 15 December 1998 Article: 53
Raman study of resonance effects in Ga1-xAlxN solid solutions F. DemangeotJ. FrandonBernard Gil OriginalPaper 01 December 1998 Article: 52
Morphology and optical properties of cubic phase GaN epilayers grown on (001) Si M. GodlewskiE. M. GoldysA. Barski OriginalPaper 01 December 1998 Article: 51
Current status of GaN crystal growth by sublimation sandwich technique P. G. BaranovE. N. MokhovHolger Juergensen OriginalPaper 01 December 1998 Article: 50
Growth on GaN and GaAs on fianite by MOCVD capillary epitaxy technique A. N. BuzyninV. V. OsikoB. Pushnyi OriginalPaper 01 December 1998 Article: 49
Native defects and carbon impurity in cubic BN I. GorczycaA. SvaneN. E. Christensen OriginalPaper 01 December 1998 Article: 48
GaN Single Crystal Habits and Their Relation to GaN Growth Under High Pressure of Nitrogen Jolanta PrywerS. Krukowski OriginalPaper 01 December 1998 Article: 47
X-ray reciprocal lattice mapping and photoluminescence of GaN/GaAlN Multiple Quantum Wells; strain induced phenomena. R. LangerJ SimonM. Leszczy~ski OriginalPaper 01 December 1998 Article: 46
Paramagnetic defects in GaN M. PalczewskaB. SuchanekM. Kami~ska OriginalPaper 01 December 1998 Article: 45
The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells A. E. YunovichV. E. KudryashovF. Manyakhin OriginalPaper 01 December 1998 Article: 44
Nucleation of AlN on the (7 × 7) Reconstructed Silicon (1 1 1) Surface E. S. HellmanD. N. E. BuchananC. H. Chen OriginalPaper 01 December 1998 Article: 43
Macro- and microstrains in MOCVD-grown GaN A. UsikovV.V. RatnikovM.P. Scheglov OriginalPaper 01 December 1998 Article: 42
300°C GaN/AlGaN Heterojunction Bipolar Transistor Fan RenCammy R. AbernathyS.J. Pearton OriginalPaper 01 December 1998 Article: 41
Localized Epitaxy of GaN by HVPE on patterned Substrates O. ParillaudV. WagnerMarc Ilegems OriginalPaper 01 December 1998 Article: 40
Pinholes, Dislocations and Strain Relaxation in InGaN B. JahnenM. AlbrechtRobert F. Davis OriginalPaper 01 December 1998 Article: 39
GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary ®Reactors O. SchoenD. SchmitzM. D. Bremser OriginalPaper 01 December 1998 Article: 38
Schottky Diodes on MOCVD Grown AlGaN Films A. Y. PolyakovN.B. SmirnovJoan M. Redwing OriginalPaper 01 December 1998 Article: 37
Properties of GaN epilayers grown on misoriented sapphire substrates Carol Trager-CowanS. McArthurS. D. Hersee OriginalPaper 01 December 1998 Article: 36
Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions Pawe MakowiakWodzimierz Nakwaski OriginalPaper 01 December 1998 Article: 35
Luminescence and ESR Spectra of GaN:Si below and above Mott Transition K. PakuaM. WojdakJacek M. Baranowski OriginalPaper 01 December 1998 Article: 34
Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR A. M. WitowskiM. L. SadowskiP. Wyder OriginalPaper 01 December 1998 Article: 33
Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy M. A. Sánchez-GarcíaF. J. SánchezK. H. Ploog OriginalPaper 01 December 1998 Article: 32
On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect Christian WetzelShugo NittaI. Akasaki OriginalPaper 01 December 1998 Article: 31
Thermodynamic properties of group-III nitrides and related species I. N. PrzhevalskiiS. Yu. KarpovYu. N. Makarov OriginalPaper 01 December 1998 Article: 30
Optical Properties of GaNAs Grown by MBE G. PozinaI. G. IvanovT.G. Andersson OriginalPaper 01 December 1998 Article: 29
Heterostructure for UV LEDs Based on Thick AlGaN Layers A. V. SakharovW. V. LundinN.N. Ledentsov OriginalPaper 01 December 1998 Article: 28
Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach J. KozlowskiR. PaszkiewiczM. Tlaczala OriginalPaper 01 December 1998 Article: 27
Surface Structures, Surfactants and Diffusion at Cubic and Wurtzite GaN T. ZywietzJörg NeugebauerChris G. Van de Walle OriginalPaper 01 December 1998 Article: 26
AMMONO method of BN, AlN and GaN synthesis and crystal growth R. Dwili~skiR. Doradzi~skiM. Kami~ska OriginalPaper 01 December 1998 Article: 25
Analysis of the Visible and UV Electroluminescence in Homojunction GaN LED’s F. CalleE. MonroyPierre Gibart OriginalPaper 01 December 1998 Article: 24
High quality GaN films - growth and properties K. PakuaJacek M. BaranowskiM. Wojdak OriginalPaper 01 December 1998 Article: 23
Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods E. KimI. BerichevW. Zagozdzon-Wosik OriginalPaper 01 December 1998 Article: 22
Polarization and band offsets of stacking faults in AlN and GaN J. A. MajewskiP. Vogl OriginalPaper 01 December 1998 Article: 21
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy B. BeaumontM. VaillePierre Gibart OriginalPaper 01 December 1998 Article: 20
Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111) F. J. SánchezF. CalleJ.-M. Spaeth OriginalPaper 01 December 1998 Article: 19
Optical properties of electron-irradiated GaN I. A. BuyanovaMt. WagnerI. Akasaki OriginalPaper 01 December 1998 Article: 18
Spectroscopic Ellipsometry on GaN: Comparison Between Hetero-epitaxial Layers and Bulk Crystals A. R. A. ZaunerM. A. C. DevillersS. Porowski OriginalPaper 01 December 1998 Article: 17
Suppression of phase separation in InGaN due to elastic strain S. Yu. Karpov OriginalPaper 01 December 1998 Article: 16
The role of piezoelectric fields in GaN-based quantum wells Andreas HangleiterJin Seo ImFerdinand Scholz OriginalPaper 01 December 1998 Article: 15
Surface Morphology of MBE-grown GaN on GaAs(001) as Function of the N/Ga-ratio O. ZsebökJ.V. ThordsonT.G. Andersson OriginalPaper 01 December 1998 Article: 14
Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique Raj SinghRichard J. BarrettT.D. Moustakas OriginalPaper 01 December 1998 Article: 13
Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001) A. R. SmithV. RamachandranM. Skowronski OriginalPaper 01 December 1998 Article: 12
Direct SIMS Determination of the InxGa1−xN Mole Fraction A. P. KovarskyYu. L. KretserS. Strite OriginalPaper 01 December 1998 Article: 10
Ultraviolet Photodetectors Based on AlxGa1−xN Schottky Barriers E. MonroyF. CalleF. Cusso OriginalPaper 01 December 1998 Article: 9
Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy S. HaffouzB. BeaumontPierre Gibart OriginalPaper 01 December 1998 Article: 8
Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes Subash KrishnankuttyWei YangP. Paul Ruden OriginalPaper 01 December 1998 Article: 7
Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence Zhonghai YuM.A.L. JohnsonJ.F. Schetzina OriginalPaper 01 December 1998 Article: 6
New plasma chemistries for etching GaN and InN: BI3 and BBr3 Hyun ChoJ. HongJ. Han OriginalPaper 01 December 1998 Article: 5
