Characteristics of an Electron Cyclotron Resonance Plasma Source for the Production of Active Nitrogen Species in III-V Nitride Epitaxy M. Meyyappan OriginalPaper 14 June 2014 Article: 46
GaN based LED’s with different recombination zones M. SchaulerC. KirchnerK. J. Ebeling OriginalPaper 14 June 2014 Article: 45
Raman characterization of the optical phonons in AlxGa1-xN layers grown by MBE and MOCVD A. CrosH. AngererM. Stutzmann OriginalPaper 14 June 2014 Article: 44
Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD M.P. MackA. AbareSteven DenBaars OriginalPaper 14 June 2014 Article: 43
Raman study of Ga1-xAlxN solid solutions F. DemangeotJ. GroenenRoger-Louis Aulombard OriginalPaper 14 June 2014 Article: 42
Physical Properties of Bulk GaN Crystals Grown by HVPE Yu.V. MelnikK.V. VassilevskiV.A. Dmitriev OriginalPaper 14 June 2014 Article: 41
Electron Beam Pumped MQW InGaN/GaN Laser V.I. KozlovskyA.B. KrysaT. George OriginalPaper 14 June 2014 Article: 40
p-doping of GaN by MOVPE S. HaffouzB. BeaumontL.G. Hubert-Pfalzgraf OriginalPaper 14 June 2014 Article: 39
Temperature behaviour of the yellow emission in GaN R. SeitzC. GasparPierre Gibart OriginalPaper 14 June 2014 Article: 38
Theoretical Studies Of Hydrogen Passivated Substitutional Magnesium Acceptor In Wurzite GaN V. J. B. TorresS. ÖbergR. Jones OriginalPaper 14 June 2014 Article: 37
Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells J. AllègreP. LefebvreM. A. Khan OriginalPaper 14 June 2014 Article: 36
Study of high quality AIN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy M. A. Sánchez-GarcíaE. CallejaM. Aguilar OriginalPaper 14 June 2014 Article: 35
Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire. J. AllègreP. LefebvrePierre Gibart OriginalPaper 14 June 2014 Article: 34
Comparison of Luminescence and Physical Morphologies of GaN Epilayers Carol Trager-CowanP. G. MiddletonOlivier Briot OriginalPaper 14 June 2014 Article: 33
Epitaxial Growth and Orientation of GaN on (1 0 0) g-LiAlO2 E. S. HellmanZ. Liliental-WeberD. N. E. Buchanan OriginalPaper 14 June 2014 Article: 32
Properties of InGaN deposited on Glass at Low Temperature Tilman BeierleinS. StriteD. J. Smith OriginalPaper 14 June 2014 Article: 31
MOVPE Growth and Structural Characterization of AlxGa1-xN S. Ruffenach-ClurOlivier BriotJ. L. Rouviere OriginalPaper 14 June 2014 Article: 30
Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia Markus KampM. MayerK. J. Ebeling OriginalPaper 14 June 2014 Article: 29
Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN J.-Chr. HolstL. EckeyI. Akasaki OriginalPaper 14 June 2014 Article: 28
Transient four wave mixing experiments on GaN R. ZimmermannM. HofmannI. Akasaki OriginalPaper 14 June 2014 Article: 27
XPS study of Au/GaN and Pt/GaN contacts R. SporkenC. SilienPierre Gibart OriginalPaper 14 June 2014 Article: 26
AlGaN-Based Bragg Reflectors O. AmbacherM. ArzbergerM. Stutzmann OriginalPaper 14 June 2014 Article: 25
Optical nonlinearities of Gallium Nitride H. HaagP. GilliotRoger-Louis Aulombard OriginalPaper 14 June 2014 Article: 24
Evidence of 2D-3D transition during the first stages of GaN growth on AlN F. WidmannB. DaudinJ. L. Rouviere OriginalPaper 14 June 2014 Article: 23
Theoretical study of point defects in GaN and AlN; lattice relaxations and pressure effects I. GorczycaA. SvaneN. E. Christensen OriginalPaper 14 June 2014 Article: 21
MOVPE growth optimization of high quality InGaN films. W. Van der StrichtI. MoermanJ. A. Crawley OriginalPaper 14 June 2014 Article: 19
Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure S. StriteA. PelzmannK. J. Ebeling OriginalPaper 14 June 2014 Article: 18
Studies of Mg-GaN grown by MBE on GaAs(111)B substrates T. S. ChengC. T. FoxonYu A. Kudriavtsev OriginalPaper 14 June 2014 Article: 17
Characterization and Modeling of Photoconductive GaN Ultraviolet Detectors E. MonroyJ. A. GarridoPierre Gibart OriginalPaper 14 June 2014 Article: 16
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature C. GuénaudE. DeleporteJ. P. Faurie OriginalPaper 14 June 2014 Article: 15
High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors D. SchmitzR. BeccardHolger Juergensen OriginalPaper 14 June 2014 Article: 14
Surface Morphology and Structure of GaNxAs1-x J.V. ThordsonO. ZsebökT.G. Andersson OriginalPaper 14 June 2014 Article: 13
Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence L.-L. ChaoG. S. Cargill IIII. Brener OriginalPaper 14 June 2014 Article: 12
The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization K. HiramatsuY. KawaguchiK. Oki OriginalPaper 14 June 2014 Article: 11
Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes Shuji Nakamura OriginalPaper 14 June 2014 Article: 10
Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure A. PelzmannS. StriteA. Nazzal OriginalPaper 14 June 2014 Article: 9
Temperature-Composition Dependence of the Bandgap and Possible Non-complanar Structures in GaN-AlN, GaN-InN and InN-AlN Mixed Crystals E. V. KalashnikovV. I. Nikolaev OriginalPaper 14 June 2014 Article: 8
Interfacial Reactions and Electrical Properties of Ti/n-GaN Contacts Holger CordesY. A. Chang OriginalPaper 14 June 2014 Article: 7
Gain Spectroscopy of HVPE-Grown GaN L. EckeyJ.-Chr. HolstK. Hiramatsu OriginalPaper 14 June 2014 Article: 6
The role of gaseous species in group-III nitride growth S. Yu. KarpovYu. N. MakarovM. S. Ramm OriginalPaper 14 June 2014 Article: 5
Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)Si surface of 6H-SiC by MBE P. RuteranaPhilippe VermautH. Morkoç OriginalPaper 14 June 2014 Article: 4
Yellow luminescence in Mg-doped GaN F. J. SánchezF. CalleJ.M. Blanco OriginalPaper 14 June 2014 Article: 3
GalnN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy A. SohmerJ. OffH. Lakner OriginalPaper 14 June 2014 Article: 2
Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures F. ManyakhinA. KovalevA. E. Yunovich OriginalPaper 14 June 2014 Article: 1
