Aluminum Nitride-Silicon Carbide Alloy Crystals Grown on SiC Substrates by Sublimation Z. GuL. DuM.H. Engelhard OriginalPaper 27 September 2020 Article: 5
Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study F. Shahedipour-SandvikM. JamilV.N. Merai OriginalPaper 27 September 2020 Article: 4
Time-resolved Spectroscopy of the violet luminescence of undoped AlN R. FreitagK. ThonkeL. Steinke OriginalPaper 27 September 2020 Article: 3
Development of High Power Green Light Emitting Diode Chips Christian WetzeT. Detchprohm OriginalPaper 27 September 2020 Article: 2
Core-Level Photoemission From Stoichiometric GaN(0001)-1×1 S.M. WidstrandK.O. MagnussonM. Oshima OriginalPaper 27 September 2020 Article: 1
Electron Beam Bombardment Induced Decrease of Cathodoluminescence Intensity from GaN Not Caused by Absorption in Buildup of Carbon Contamination Eva M. CampoG. S. Cargill IIIIan Ferguson OriginalPaper 13 June 2014 Article: 8
The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors W.L. LiuV.O. TurinK.L. Wang OriginalPaper 13 June 2014 Article: 7
The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation B. LiuJ.H. EdgarH. M. Meyer III OriginalPaper 13 June 2014 Article: 6
Selective Etching of GaN from AlGaN/GaN and AlN/GaN Structures J.A. GrenkoC.L. Reynolds JrZ. Sitar OriginalPaper 13 June 2014 Article: 5
Preparation of stoichiometric GaN(0001)-1×1: an XPS study S.M. WidstrandK.O. MagnussonM. Oshima OriginalPaper 13 June 2014 Article: 4
Low dislocation density, high power InGaN laser diodes Piotr PerlinM. LeszczỹskiA. Libura OriginalPaper 13 June 2014 Article: 3
Growth of AlN crystals on AlN/SiC seeds by AlN powder sublimation in nitrogen atmosphere V. NoveskiR. SchlesserZ. Sitar OriginalPaper 13 June 2014 Article: 2
Review of polarity determination and control of GaN M. SumiyaS. Fuke OriginalPaper 13 June 2014 Article: 1
High-Speed Visible-Blind Resonant Cavity Enhanced AlGaN Schottky Photodiodes Necmi BiyikliTolga KartalogluEkmel Ozbay OriginalPaper 01 December 2003 Article: 8
Effect of Photo-Assisted RIE Damage on GaN Z. MouffakN. Medelci-DjezzarL. Trombetta OriginalPaper 01 December 2003 Article: 7
P- and N-type Doping of Non-Polar A-plane GaN Grown by Molecular-Beam Epitaxy on R-plane Sapphire R. ArmitageQing YangEicke R. Weber OriginalPaper 01 December 2003 Article: 6
Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications Jae-Hoon LeeMyoung-Bok LeeHyun Kyung Cho OriginalPaper 01 December 2003 Article: 5
The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs K.A. FilippovA.A. Balandin OriginalPaper 01 December 2003 Article: 4
Semiconductor microcavities: towards polariton lasers A. KavokinG. MalpuechBernard Gil OriginalPaper 01 December 2003 Article: 3
High-Performance Solar-Blind AlGaN Schottky Photodiodes Necmi BiyikliTolga KartalogluEkmel Ozbay OriginalPaper 01 December 2003 Article: 2
Free excitons in strained MOCVD-grown GaN layers N.N. SyrbuI.M. TiginyanuDimitris Pavlidis OriginalPaper 01 December 2003 Article: 1
Effect Of Implantation Temperature On Damage Accumulation In Ar - Implanted GaN I. UsovN. ParikhRobert F. Davis OriginalPaper 27 September 2020 Article: 9
Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy E. FrayssinetB. BeaumontP. Valvin OriginalPaper 27 September 2020 Article: 8
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells B. MonemarP.P. PaskovI. Akasaki OriginalPaper 27 September 2020 Article: 7
Hardness of bulk single-crystal GaN and AlN Ichiro Yonenaga OriginalPaper 27 September 2020 Article: 6
Compositional variation of AlGaN epitaxial films on 6H-SiC substrates determined by cathodoluminescence A. PeterssonAnders GustafssonYoshinobu Aoyagi OriginalPaper 27 September 2020 Article: 5
Wet Chemical Etching of AlN Single Crystals D. ZhuangJ.H. EdgarL. Walker OriginalPaper 27 September 2020 Article: 4
Review of Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces R. M. FeenstraJ. E. NorthrupJörg Neugebauer OriginalPaper 27 September 2020 Article: 3
Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001) C. D. LeeR. M. FeenstraW. J. Choyke OriginalPaper 27 September 2020 Article: 2
Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux Nathan SipeRama Venkat OriginalPaper 27 September 2020 Article: 1
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates Robert F. DavisT. GehrkeR. Grober OriginalPaper 01 December 2001 Article: 14
Visible Luminescent Activation of Amorphous AlN:Eu Thin-Film Phosphors with Oxygen Meghan L. CaldwellP. G. Van PattenHugh H Richardson OriginalPaper 01 December 2001 Article: 13
On the origin of the 2.8 eV blue emission in p-type GaN:Mg : A time-resolved photoluminescence investigation F. ShahedipourB. W. Wessels OriginalPaper 01 December 2001 Article: 12
Indium incorporation and surface segregation during InGaN growth by molecular beam epitaxy: experiment and theory Huajie ChenR. M. FeenstraD. W. Greve OriginalPaper 01 December 2001 Article: 11
Electrical Profiles in GaN/Al2O3 Layers with Conductive Interface Regions D. C. LookJ. E. HoelscherG. D. Via OriginalPaper 01 December 2001 Article: 10
Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy Kyoyeol LeeKeunho Auh OriginalPaper 01 December 2001 Article: 9
Room Temperature Ohmic contact on n-type GaN using plasma treatment Ho Won JangJong Kyu KimJong-Lam Lee OriginalPaper 01 December 2001 Article: 8
Growth Mode and Defects in Aluminum Nitride Sublimed on (0001) 6H-SiC Substrates Lianghong LiuB. LiuJ. H. Edgar OriginalPaper 01 December 2001 Article: 7
Influence of Poisson’s ratio uncertainty on calculations of the bowing parameter for strained InGaN layers S. StepanovW. N. WangY. G. Shreter OriginalPaper 01 December 2001 Article: 6
New Technique for Sublimation Growth of AlN Single Crystals Y. ShiB. LiuMartin Kuball OriginalPaper 01 December 2001 Article: 5
High-temperature structural behavior of Ni/Au Contact on GaN(0001) Chong Cook KimJong Kyu KimP. Ruterana OriginalPaper 01 December 2001 Article: 4
High Temperature Elastic Constant Prediction of Some Group III-Nitrides Robert R. ReeberKai Wang OriginalPaper 01 December 2001 Article: 3
Electronic Properties of Ga(In)NAs Alloys I. A. BuyanovaW. M. ChenB. Monemar OriginalPaper 01 December 2001 Article: 2
Characterization of Red Emission in Nominally Undoped Hydride Vapor Phase Epitaxy GaN E. M. GoldysM. GodlewskiB. Monemar OriginalPaper 01 December 2001 Article: 1
Identification of As, Ge and Se Photoluminescence in GaN Using Radioactive Isotopes A. StötzlerR. WeissenbornIsolde Collaboration OriginalPaper 12 December 2020 Pages: 990 - 996
Emission at 247 nm from GaN quantum wells grown by MOCVD Takao SomeyaKatsuyuki HoshinoYasuhiko Arakawa OriginalPaper 12 December 2020 Pages: 984 - 989
Comparison Study of Structural and Optical Properties of InxGa1−xN/GaN Quantum Wells with Different In Compositions Yong-Hwan KwonG. H. GainerS. P. DenBaars OriginalPaper 12 December 2020 Pages: 977 - 983
Influence of Internal Electric Fields on the Ground Level Emission of GaN/AlGaN Multi-Quantum Wells A. BonfiglioM. LomascoloH. Morkoc OriginalPaper 12 December 2020 Pages: 970 - 976
Spectroscopy in Polarized and Piezoelectric AlGaInN Heterostructures C. WetzelT. TakeuchiI. Akasaki OriginalPaper 12 December 2020 Pages: 957 - 969
Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and their Optical Characterization by Micro-Photoluminescence/Raman Mapping M. KuballM. BenyoucefC.T. Foxon OriginalPaper 12 December 2020 Pages: 950 - 956
