Volume 996, Issue 1

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December 2007

Symposium H — Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies

Issue Editors:

Y. Chabal,
A. Esteve,
N. Richard,
G. Wilk

17 articles in this issue

Electrical Characterization of High-k Dielectrics by Means of Flat-Band Voltage Transient Recording
Salvador Duenas
Helena Castán
Markus Leskela
OriginalPaper 01 August 2008 Article: 711
Impact of Interfacial Nitridation of HfO2 High-k Gate Dielectric Stack on 4H-SiC
Rajat Mahapatra
Amit K. Chakraborty
Karl S. Coleman
OriginalPaper 01 August 2008 Article: 708
Atomic-scale Characterization of HF-treated 4H-SiC(0001)1×1 Surfaces by Scanning Tunneling Microscopy
Kenta Arima
Hideyuki Hara
Kazuto Yamauchi
OriginalPaper 01 August 2008 Article: 706
X-Ray Reflectometry Determination of Structural Information from Atomic Layer Deposition Nanometer-Scale Hafnium Oxide Thin Films
Donald Windover
D. L. Gil
A. Diebold
OriginalPaper 01 August 2008 Article: 705
In-Situ Infrared Absorption Monitoring of Atomic Layer Deposition of Metal Oxides on Functionalized Si and Ge Surfaces
Min Dai
Jinhee Kwon
Marek Boleslawski
OriginalPaper 01 August 2008 Article: 704
The Electrical Characterization of Molecular-Beam-Deposited LaAlO₃ on GaAs and its Annealing Effects
Donghun Choi
Maitri Warusawithana
James S. Harris
OriginalPaper 01 August 2008 Article: 531
Investigation of Local Coordination and Electronic Structure of Dielectric Thin Films from Theoretical Energy-Loss Spectra
Manish K. Singh
Javier Rosado
Christos G. Takoudis
OriginalPaper 01 August 2008 Article: 527
Al-Oxynitride Buffer Layer Facilities for PrO_X/SiC Interfaces
Karsten Henkel
Rakesh Sohal
Dieter Schmeißer
OriginalPaper 01 August 2008 Article: 523
A New 3D Multistring Code to Identify Compound Oxide Nanophase With Ion Channeling
James Douglas Bradley
Nicole Herbots
Vasu Atluri
OriginalPaper 01 August 2008 Article: 514
Effect of Oxidizer on Chemical Vapor Deposited Hafnium Oxide-Based Nanostructures and the Engineering of their Interfaces with Si(100)
Manish K. Singh
Rajesh Katamreddy
Christos G. Takoudis
OriginalPaper 01 August 2008 Article: 510
Comparative Study of Electronic Properties of Point Defects in Monoclinic Hafnium Dioxide
Valerie Cuny
Nicolas Richard
OriginalPaper 01 August 2008 Article: 505
Influences of Plasma Processed Interface Layers on Germanium MOS Devices with ALD Grown HfO2
Takuya Sugawara
Raghavasimhan Sreenivasan
Paul C. McIntyre
OriginalPaper 01 August 2008 Article: 402
Nucleation Studies of HfO₂ Thin Films Produced by Atomic Layer Deposition
Justin C. Hackley
J. Derek Demaree
Theodosia Gougousi
OriginalPaper 01 August 2008 Article: 309
Effect of Systematic Changes of Ti and Hf Si-oxynitride Alloys by Nitrogen Incorporation as a Bond Constraint on Electrical and Material Properties
Sanghyun Lee
Gerry Lucovsky
Jan Luning
OriginalPaper 01 August 2008 Article: 304
Scaling of Hafnium-Based High-k Dielectrics
Dina H. Triyoso
Rama I. Hegde
Nevine Rochat
OriginalPaper 01 August 2008 Article: 301
Structural and Electronic Properties of Oxygen Vacancies in Monoclinic HfO₂
Peter Broqvist
Alfredo Pasquarello
OriginalPaper 01 August 2008 Article: 108
XPS and STM Studies on Initial Oxidation of Si(110)-16×2
Maki Suemitsu
Hideaki Togashi
Hidehito Asaoka
OriginalPaper 01 August 2008 Article: 104

Volume 996, Issue 1

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