Volume 994, Issue 1

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December 2006

Symposium F — Semiconductor Defect Engineering–Materials, Synthetic Structures and Devices II

Issue Editors:

S. Ashok,
J. Chevallier,
P. Kiesel,
T. Ogino

52 articles in this issue

Radiation-Induced Deep-Level Traps in CCD Image Sensors
Cristian Tivarus
William C. McColgin
OriginalPaper 01 February 2011 Article: 09941207
Bright-Pixel Defects in Irradiated CCD Image Sensors
William C. McColgin
Cristian Tivarus
Albert J. Filo
OriginalPaper 01 February 2011 Article: 09941206
Interaction Between Recombination Enhanced Dislocation Glide Process Activated Basal Stacking Faults and Threading Dislocations in 4H-Silicon Carbide Epitaxial Layers
Yi Chen
Michael Dudley
Robert E. Stahlbush
OriginalPaper 01 February 2011 Article: 09941203
Design and Simulation of High Efficiency Silicon Light-Emitting Diodes
Grant Z. Pan
Jaime Peretzman
Li P. Ren
OriginalPaper 01 February 2011 Article: 09941123
Gettering Effect in Low and High Density Structural Defect Regions of the Cast Multi-Crystalline-Silicon Wafer
Yongkook Park
Jinggang Lu
G. A. Rozgonyi
OriginalPaper 01 February 2011 Article: 09941121
Hydrostatic Pressure Studies of GaN/AlGaN/GaN Heterostructure Devices with Varying AlGaN Thickness and Composition
Isaiah Steinke
M. Z. Kauser
Kyung-ah Son
OriginalPaper 01 February 2011 Article: 09941119
The Charge Carriers Transport Mechanism Through the Interface Layer of the p-GaSe(Cu)/n⁺GaAs Heterojunctions
Elmira I. Cuculescu
Mihail I. Caraman
OriginalPaper 01 February 2011 Article: 09941118
Modeling Ultra Shallow Junctions Formed by Phosphorus-Carbon and Boron-Carbon Co-implantation
Christoph Zechner
Dmitri Matveev
Bartek Pawlak
OriginalPaper 21 April 2011 Article: 09941117
Au/n-ZnO Rectifying Contacts Fabricated with Hydrogen Peroxide Pre-Treatment
Qilin Gu
Chi-Chung Ling
Hock-Chun Ong
OriginalPaper 01 February 2011 Article: 09941115
An Evaluation of an Automated Detection Algorithm to Count Defects Present in X-Ray Topographical Images of SiC Wafers
Ian C. Brazil
Patrick J. McNally
Peter M. Sandvik
OriginalPaper 01 February 2011 Article: 09941113
Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers
Mahfoudh Raïssi
Gabrielle Regula
Jean-Louis Lazzari
OriginalPaper 01 February 2011 Article: 09941108
Microwave Activation of Exfoliation in Ion–Cut Silicon Layer Transfer
D. C. Thompson
T. L. Alford
N. David Theodore
OriginalPaper 01 February 2011 Article: 09941107
Silver Nanocrystals at Cavities Created by High Energy Helium Implantation in Bulk Silicon
Rachid El Bouayadi
Gabrielle Regula
Esidor Ntsoenzok
OriginalPaper 01 February 2011 Article: 09941106
Investigation of Biaxial Strain in Strained Silicon on Insulator (SSOI) Using High-Resolution X-ray Diffraction
Yeongseok Zoo
N. D. Theodore
Terry L. Alford
OriginalPaper 01 February 2011 Article: 09941103
Characteristics of Strained GaAsSb(N)/InP Quantum Wells Grown by Metalorganic Chemical Vapor Deposition on InP Substrates
Dapeng Xu
Juno Yu-Ting Huang
Susan E. Babcock
OriginalPaper 01 February 2011 Article: 09941101
Defect Reduction and Its Mechanism of Selective Ge Epitaxy in Trenches on Si(001) Substrates using Aspect Ratio Trapping
J. S. Park
J. Bai
A. Lochtefeld
OriginalPaper 01 February 2011 Article: 09941005
An Experimental and Simulation Study of Arsenic Diffusion Behavior in Point Defect Engineered Silicon
Ning Kong
Taras A. Kirichenko
Sanjay K. Banerjee
OriginalPaper 01 February 2011 Article: 09941002
Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon
Nikolas Zographos
Christoph Zechner
Ibrahim Avci
OriginalPaper 21 April 2011 Article: 09941001
On the Impact of Metal Impurities on the Carrier Lifetime in N-type Germanium
Eugenijus Gaubas
Jan Vanhellemont
Paul Clauws
OriginalPaper 21 April 2011 Article: 09940906
Germanium Layer Exfoliation by Ion-Cut Processes
Reinhart Job
Wolfgang Düngen
OriginalPaper 01 February 2011 Article: 09940905
Deep Level Transient Spectroscopy Study of Dislocations in SiGe/Si Heterostructures
Jinggang Lu
Yongkook Park
George A Rozgonyi
OriginalPaper 01 February 2011 Article: 09940904
Fabrication of Strain Relaxed Silicon-Germanium-on-Insulator (Si_0.35Ge_0.65OI) Wafers using Cyclical Thermal Oxidation and Annealing
Grace Huiqi Wang
Eng-Huat Toh
Yee-Chia Yeo
OriginalPaper 01 February 2011 Article: 09940903
Modeling of Cu Surface Precipitation and Out-Diffusion from Silicon Wafers
Hsiu-Wu Guo
Scott T. Dunham
OriginalPaper 01 February 2011 Article: 09940901
Effect of Strain and Polarization Grading on Hole Transport across Tunneling Barriers between Metals and Wurtzite Indium Gallium Nitride
Choudhury Jayant Praharaj
OriginalPaper 01 February 2011 Article: 09940805
Shallow Junction Engineering by Phosphorus and Carbon Co-implantation: Optimization of Carbon Dose and Energy
Nathalie Cagnat
Cyrille Laviron
Marc Juhel
OriginalPaper 01 February 2011 Article: 09940804
Characterization of the Segregation of Arsenic at the Interface SiO₂/Si
Christian Steen
Peter Pichler
Wolfgang Windl
OriginalPaper 01 February 2011 Article: 09940802
Schottky Barrier Height Engineering in NiGe/n-Ge(001) Contacts by Germanidation Induced Dopant Segregation
S. L. Liew
C. T. Chua
D. Z. Chi
OriginalPaper 01 February 2011 Article: 09940801
DLTS: A Promising Technique for Understanding the Physics and Engineering of the Point Defects in Si and III-V Alloys
Aurangzeb Khan
Masafumi Yamaguchi
OriginalPaper 01 February 2011 Article: 09940705
Comparison of Silicon Photoluminescence and Photoconductive Decay for Material Quality Characterization
Steven Johnston
Richard Ahrenkiel
Wyatt Metzger
OriginalPaper 01 February 2011 Article: 09940704
Cathodoluminescence Study of V-defects in AlGaAs-based High-power Laser Bars
Matthieu Pommies
Manuel Avella
Julien Nagle
OriginalPaper 01 February 2011 Article: 09940703
Anomalous Evolution of Bubbles in Krypton-Implanted SiO₂
Hannan Assaf
Esidor Ntsoenzok
S. Ashok
OriginalPaper 01 February 2011 Article: 09940604
Characterization of Nanocavities in Silicon using Small Angle X-Ray Scattering
Myriam Dunmont
Vanessa Coulet
Françoise Bley
OriginalPaper 01 February 2011 Article: 09940602
Thermally Induced Relaxation in GaInNAsSb Quantum Well Structures
Evan Pickett
Seth Bank
James Harris
OriginalPaper 01 February 2011 Article: 09940502
Defect Contribution to the Photoluminescence from Embedded Germanium Nanocrystals Prepared by Ion Implantation and Sputter Deposition Methods
P. K. Giri
Kaustuv Das
Samit K. Roy
OriginalPaper 01 February 2011 Article: 09940404
Low-Energy Irradiation Damage in Single-Walled Carbon Nanotubes
Satoru Suzuki
Yoshihiro Kobayashi
OriginalPaper 01 February 2011 Article: 09940402
Deuterium Out-Diffusion Kinetics in Magnesium-Doped GaN
Jacques Chevallier
François Jomard
Sylvain Delage
OriginalPaper 01 February 2011 Article: 09940322
Comparative Analysis of Process of Diffusion of Interstitial Oxygen Atoms and Interstitial Hydrogen Molecules in Silicon and Germanium Crystals: Quantumchemical Simulation
Vasilii Gusakov
OriginalPaper 01 February 2011 Article: 09940320
Stress Effects on As Activation in Si
Chihak Ahn
Scott T. Dunham
OriginalPaper 01 February 2011 Article: 09940317
Application of Computational Intelligence to Investigation of Defect Centers in Semi-Insulating Materials by Photoinduced Transient Spectroscopy
Pawel Kaminski
Stanislaw Jankowski
Janusz Bedkowski
OriginalPaper 01 February 2011 Article: 09940314
Paramagnetic Defects and Photoluminescence in Carbon Rich a-SiC:H Films: Role of Hydrogen and Excess of Carbon
A. V. Vasin
A. A. Konchits
S. Ashok
OriginalPaper 01 February 2011 Article: 09940313
The Dynamic Uultrasound Influence on the Diffusion and Drift of the Charge Carriers in Silion p-n Structures
Roman M. Burbelo
Oleg Y. Olikh
Mark K. Hinders
OriginalPaper 01 February 2011 Article: 09940311
Electronic structure of Cd, In, Sn substitutional Defects in GaSe
Zsolt Rak
Subhendra D Mahanti
Nils C Fernelius
OriginalPaper 01 February 2011 Article: 09940310
Evidence of the De-Multiplication Interactions Between Threading Dislocations in GaN Films Grown on (0001) Sapphire Substrates
Cheng-Liang Wang
Jyh-Rong Gong
OriginalPaper 01 February 2011 Article: 09940309
Simulation of Vacancy Cluster Formation and Binding Energies in Single Crystal Germanium
Piotr Spiewak
Krzysztof Jan Kurzydlowski
Igor Romandic
OriginalPaper 21 April 2011 Article: 09940308
Lead Iodide Thin Films Grown using N.N-Dimethylformamide as Solvent
Jose Fernando Condeles
Ademar Marques Caldeira-Filho
Marcelo Mulato
OriginalPaper 01 February 2011 Article: 09940305
Defect Structures of B₁₂As₂ Epilayers Grown on c-plane and a-plane 6H-SiC Substrates
Hui Chen
Guan Wang
Martin Kuball
OriginalPaper 01 February 2011 Article: 09940301
Formation of Hydrogen Related Defects and Nano-Voids in Plasma Hydrogenated ZnO
Reinhart Job
OriginalPaper 01 February 2011 Article: 09940209
Hydrogen-induced Nitrogen Passivation in Dilute Nitrides: A Novel Approach to Defect Engineering
Rinaldo Trotta
Antonio Polimeni
Silvia Rubini
OriginalPaper 01 February 2011 Article: 09940208
Predominance of Alternate Diffusion Mechanisms for the Interstitial-Substitutional Impurity Gold in Silicon
Hui Li
Na Li
Teh Y. Tan
OriginalPaper 01 February 2011 Article: 09940205
Are the Materials Properties of Indiumnitride Dominated by Defects?
Petra Specht
William Hong
Eicke R. Weber
OriginalPaper 01 February 2011 Article: 09940201

Volume 994, Issue 1

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