Volume 97, Issue 1

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December 1987

Symposium I — Novel Refractory Semiconductors

Issue Editors:

D. Emin,
T. Aselage,
C. Wood

55 articles in this issue

Icosahedral Boron-Rich Solids as Refractory Semiconductors
David Emin
OriginalPaper 01 December 1987 Pages: 3 - 15
Electron Transport in Boron-Rich Borides
O. A. Golikova
OriginalPaper 01 December 1987 Pages: 17 - 25
Anomalous Seebeck Coefficient in Boron Carbides
T. L. Aselage
D. Emin
I. Howard
OriginalPaper 01 December 1987 Pages: 27 - 32
Electronic Transport Properties of Hot-Pressed B₆Si
C. Wood
D. Emin
I. D. R. Mackinnon
OriginalPaper 01 December 1987 Pages: 33 - 38
Bipolaron Formation in B₁₂ and (B₁₁C)⁺ Icosahedra
I. A. Howard
C. L. Beckel
David Emin
OriginalPaper 01 December 1987 Pages: 39 - 43
Electronic Structure of Boron and Boron-Rich Borides
Alfred C. Switendick
OriginalPaper 01 December 1987 Pages: 45 - 50
Stable Positions of a Metal Ion Relative to an Icosahedral Borane
C. L. Beckel
I. A. Howard
OriginalPaper 01 December 1987 Pages: 51 - 55
Origin of Paramagnetic Defect in Single Crystal and Ceramic B₄C
E. L. Venturini
D. Emin
T. L. Aselage
OriginalPaper 01 December 1987 Pages: 57 - 62
Nature of Paramagnetic Centers in Amorphous Boron
G. P. Tsiskarishvili
G. V. Tsagareishvili
F. N. Tavadze
OriginalPaper 01 December 1987 Pages: 63 - 68
Thermal Properties of Boron-Rich Borides
H. E. Fischer
E. T. Swartz
R. O. Pohl
OriginalPaper 01 December 1987 Pages: 69 - 76
Thermal Conductivity of Boron Carbides
Marvin Moss
OriginalPaper 01 December 1987 Pages: 77 - 82
Microscopic Origin of the Composition-Dependent Change of the Thermal Conductivity in Boron Carbides
David Emin
I. A. Howard
C. L. Beckel
OriginalPaper 01 December 1987 Pages: 83 - 88
A Theoretical Approach to the Thermal Conductivity of Boron Carbides
V. M. Kenkre
X. Fan
OriginalPaper 01 December 1987 Pages: 89 - 94
Atomic Interactions in a Boron-Rich Carbon-Containing Icosahedron: Para-Carborane
C. L. Beckel
G. E. Obarski
J. D. Fritts
OriginalPaper 01 December 1987 Pages: 95 - 100
Preparation of Boron-Rich Refractory Semiconductors
T. L. Aselage
OriginalPaper 01 December 1987 Pages: 101 - 111
Low-Carbon Boron Carbidestproduced by CVD
A. N. Campbell
A. W. Mullendore
C. Wood
OriginalPaper 01 December 1987 Pages: 113 - 118
On the Pressureless Sintering of Lanthanum Hexaboride Materials
Heinrich Knoch
Alfred Lipp
OriginalPaper 01 December 1987 Pages: 119 - 126
Chemical Vapor Deposited Boron Carbide: Growth by a Vapor-Liquidsolid Process
Ian D. R. Mackinnon
Katherine L. Smith
OriginalPaper 01 December 1987 Pages: 127 - 132
A Comparison of Calculated and Experimental Hrtem Images for Twinned Boron Carbide
Mark L. Miller
Ian D. R. Mackinnon
OriginalPaper 01 December 1987 Pages: 133 - 138
Real Structure and Internal Friction of Boron Doped with Zirconium
G. Sh. Darsavelidze
G. V. Tsagareishvili
F. N. Tavadze
OriginalPaper 01 December 1987 Pages: 139 - 144
Crystal Structure Refinements of Rhombohedral Symmetry Materials Containing Boron-Rich Icosahedra
B. Morosin
T. L. Aselage
R. S. Feigelson
OriginalPaper 01 December 1987 Pages: 145 - 149
Electron Deformation Density Distribution in α-Boron
G. Will
B. Kiefer
G. A. Slack
OriginalPaper 01 December 1987 Pages: 151 - 156
Silicon Carbide: Progress in Crystal Growth
J. Anthony Powell
OriginalPaper 01 December 1987 Pages: 159 - 170
Highly Mismatched Hetero-Epitaxial Growth of Cubic Sic on Si
Hiroyuki Matsunami
OriginalPaper 01 December 1987 Pages: 171 - 182
Heteroepitaxial Growth of Antiphase-Boundary Free Cubic Sic(100) Single Crystals on Si(100)
Kentaro Shibahara
Shigehiro Nishino
Hiroyuki Matsunami
OriginalPaper 01 December 1987 Pages: 183 - 188
Epitaxy of SiC Films on Sapphire by Laser CVD
Hirohide Nakamatsu
Shichio Kawai
OriginalPaper 01 December 1987 Pages: 189 - 194
Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes
Gerhard Pensl
Reinhard Helbig
Peter Lanig
OriginalPaper 01 December 1987 Pages: 195 - 200
Beta Silicon Carbide Growth with Device Applications
G. L. Harris
M. G. Spencer
K. Wongchotigul
OriginalPaper 01 December 1987 Pages: 201 - 206
Optical, Vibrational and Surface Properties of SiC
W. J. Choyke
OriginalPaper 01 December 1987 Pages: 207 - 219
Lattice Vibrations and Defect-Induced Vibrational Properties in Cubic SiC
P. J. Lin-Chung
OriginalPaper 01 December 1987 Pages: 221 - 226
β-SiC MESFETs
G. Kelner
S. Binari
H. Kong
OriginalPaper 01 December 1987 Pages: 227 - 232
Growth, Doping, Device Development and Characterization of CVD Beta-SiC Epilayers on Si(100) and Alpha-SiC(0001)
H. Kong
H. J. Kim
R. F. Davis
OriginalPaper 01 December 1987 Pages: 233 - 245
Inversion-Type Mos Field Effect Transistors Using CVD Grown Cubic SiC on Si
K. Shibahara
T. Takeuchi
H. Matsunami
OriginalPaper 01 December 1987 Pages: 247 - 252
Residual Donors in P-SiC Films
W. E. Carlos
W. J. Moorea
R. F. Davis
OriginalPaper 01 December 1987 Pages: 253 - 258
Electrical Properties of 3C-SiC and its application to FET
S. Yoshida
K. Endo
M. Yamanaka
OriginalPaper 01 December 1987 Pages: 259 - 264
Thermally Activated Reactions of Titanium Thin Films with (100) 3C-SiC Substrates
J. J. Bellina Jr.
M. V. Zeller
OriginalPaper 01 December 1987 Pages: 265 - 270
Single Crystal Epitaxial Growth of β-SiC for Device and Integrated Circuit Applications
J. D. Parsons
OriginalPaper 01 December 1987 Pages: 271 - 282
AES Studies of the M/SiC Interface with Metal Carbide Formers
M. V. Zeller
J. Bellina
H. Will
OriginalPaper 01 December 1987 Pages: 283 - 288
Effects of the Subsequent Ion Irradiation on the Formation Process of β-SiC from Si-C Mixtures Fabricated on Si by Ion Implantation
Tadamasa Kimura
Hiroyuki Yamaguchi
Yoshio Adachi
OriginalPaper 01 December 1987 Pages: 289 - 294
Sputtered Fitas of Amorphous Hydrogenated Silicon Carbide
Richard B. Rizk
Alain E. Kaloyeros
Carol Kozlowski
OriginalPaper 01 December 1987 Pages: 295 - 300
Investigation on the Gap Density of States in Amorphous Semiconducting Carbon Silicon and Carbon Tin Alloys
P. Mpawenayo
M. Nsabimana
OriginalPaper 01 December 1987 Pages: 301 - 305
Predictions on the Physical Properties of Amorphous Carbon-Tin Semiconducting Alloys I Structure and Optical Properties
Prosper Mpawenayo
OriginalPaper 01 December 1987 Pages: 307 - 312
Synthetic Diamond, Its Properties and Synthesis
Max N. Yoder
OriginalPaper 01 December 1987 Pages: 315 - 326
Growth of Diamond Films by Plasma CVD
Shigemi Yugo
Tadamsa Kimura
Yoshio Adachi
OriginalPaper 01 December 1987 Pages: 327 - 332
Refractory Semiconductors for High Temperature Thermoelectric Energy Conversion
Charles Wood
OriginalPaper 01 December 1987 Pages: 335 - 346
Effect of High Temperature Annealing on the Thermoelectric Properties of GaP Doped SiGe
Jan W. Vandersande
Charles Wood
Susan Draper
OriginalPaper 01 December 1987 Pages: 347 - 352
Thermoelectric Properties of SmS_l−xAs_x Alloys
L. R. Danielson
M. N. Alexander
C. Wood
OriginalPaper 01 December 1987 Pages: 353 - 358
Lanthanide Refractory Semiconductors Based on the Th₃P₄ Structure
K. A. Gschneidner Jr.
J. F. Nakahara
Ames Laboratory
OriginalPaper 01 December 1987 Pages: 359 - 370
Synthesis, Magnetic, Electrical and Mössbauer Investigations on Complex Semiconductors
Hugo Steinfink
John Steven Swinnea
OriginalPaper 01 December 1987 Pages: 371 - 378
The Effect of Sm, Eu and Yb on the Thermoelectric Properties of Th₃P₄,-Type Lanthanum Sulfide
J. F. Nakahara
B. J. Beaudry
Ames Laboratory
OriginalPaper 01 December 1987 Pages: 379 - 384

Volume 97, Issue 1

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