Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE Yuki NiiyamaSadahiro KatoSeikoh Yoshida OriginalPaper 17 April 2007 Article: 1606
Investigation of The Electrical and Chemical Properties of Plasma-Treated AlGaN Xian-An CaoH. PiaoH. X. Jiang OriginalPaper 31 January 2007 Article: 1604
Fully Unstrained GaN on Thick AlN Layers for MEMS Application Katja TonischFlorentina NiebelschuetzOliver Ambacher OriginalPaper 31 January 2007 Article: 1603
AlGaN/GaN High Electron Mobility Transistors on Si/SiO2/poly-SiC Substrates Travis AndersonFan RenP. Bove OriginalPaper 17 April 2007 Article: 1602
Investigation of Optical Properties of Nitrogen Incorporated Sb based Quantum Well and Quantum Dots for Infrared Sensors Application Seongsin M. KimHoman B. YuenJames S. Harris OriginalPaper 06 February 2007 Article: 1552
GaAsN Thin Film Growth by Chemical Beam Epitaxy with Source Gas Flow Rate Modulation Yoshio OhshitaKenji SaitoMasafumi Yamaguchi OriginalPaper 14 May 2007 Article: 1551
Recessed Gate Processing for GaN/AlGaN-HEMTs Wilfried PletschenRudolf KieferGuenter Weimann OriginalPaper 07 February 2007 Article: 1549
Low-Temperature Cathodoluminescence Mapping of Green, Blue, and UV GaInN/GaN LED Dies Yong XiaTheeradetch DetchprohmChristian Wetzel OriginalPaper 07 February 2007 Article: 1545
Vertically Increasing Well Thickness and In Content in GaInN MQW’s due to V-shaped Pits H. BremersL. HoffmannA. Hangleiter OriginalPaper 23 March 2007 Article: 1539
Characterization of GaN/Si Using Capacitance Spectroscopies Steven R. SmithJohn C. RobertsSaid Elhamri OriginalPaper 07 February 2007 Article: 1538
Electroreflectance Spectra of InGaN/AlGaN/GaN p-n-Heterostructures Alexander E. YunovichLev AvakyantsBoris Yavich OriginalPaper 31 January 2007 Article: 1536
Development of Aluminum Nitride/Platinum Stack Structures for an Enhanced Piezoelectric Response Adam KabulskiJohn HarmanDimitris Korakakis OriginalPaper 07 February 2007 Article: 1535
Schottky I-V Characteristics of Au/Ni/GaN/SiNx nanonework/sapphire structures Jinqiao XieYi FuHadis Morkoc OriginalPaper 03 April 2007 Article: 1534
Investigation of Electrical Properties in Si Ion Implanted GaN Layer as A Function of Dose and Energy Masataka SatohT. SaitohT. Nakamura OriginalPaper 07 February 2007 Article: 1531
Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy Mo AhoujjaS. ElhamriR. L. Hengehold OriginalPaper 07 February 2007 Article: 1530
Persistent Photoconductivity in High-mobility AlxGa1−xN/AlN/GaN Heterostructures Grown by Metal-organic Vapor-phase Epitaxy Necmi BiyikliUmit OzgurCagliyan Kurdak OriginalPaper 31 January 2007 Article: 1528
Influence of Overheating Effect on Transport Properties of AlGaN/GaN Heterostructures Andriy KurakinSvetlana VitusevichNorbert Klein OriginalPaper 07 February 2007 Article: 1527
Low-voltage Avalanche Breakdown in AlGaN Multi-quantum Wells Shengkun ZhangX. ZhouP. P. Chow OriginalPaper 07 February 2007 Article: 1523
Ion-Implanted GaN/AlGaN/GaN HEMTs with Extremely Low Gate Leakage Current Kazuki NomotoTaku TajimaTohru Nakamura OriginalPaper 07 February 2007 Article: 1522
500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage Hiroshi KambayashiJiang LiSeikoh Yoshida OriginalPaper 07 February 2007 Article: 1520
Estimation of Junction Temperature in Operating Light Emitting Diodes Md. Shahrukh SakhawatArindra N. GuhaKalyankumar Das OriginalPaper 07 February 2007 Article: 1513
Loss of Quantum Efficiency in Green Light Emitting Diode Dies at Low Temperature Yufeng LiWei ZhaoChristian M. Wetzel OriginalPaper 31 January 2007 Article: 1512
Electrical Properties, Deep Levels Spectra and Luminescence of Undoped GaN/InGaN Multi-quantum-well Structures as Affected by Electron Irradiation Alexander Y. PolyakovNikolai B. SmirnovJames S. Wright OriginalPaper 17 April 2007 Article: 1511
Effects of Surface Treatments on Optical Properties of GaN Gakuyo FujimotoKatsushi FujiiTakafumi Yao OriginalPaper 16 April 2007 Article: 1508
Resonant Energy Transfer due to Exciton Coupling in Hybrid Persovskites Conjugated to GaN Semiconductors Jianyou LiArup NeogiTeruya Ishihara OriginalPaper 07 February 2007 Article: 1507
Comparison between the Photoluminescence Mappings Under Selective and Non-selective Excitation and the Electroluminescence Mappings of the Epitaxial Wafers with InGaN-LED Structure Kazuyuki TadatomoOsamu ShimoikeKatsuyuki Hoshino OriginalPaper 07 February 2007 Article: 1505
Evaluation on Crystal and Optical Properties of AlN:Er Prepared by RF magnetron sputtering method Shin-ichiro UekusaTakahiko OhnoHiroshi Miura OriginalPaper 07 February 2007 Article: 1503
Magnetic and Optical Properties of Eu-doped GaN Jennifer HiteG. T. ThalerStephen Pearton OriginalPaper 06 February 2007 Article: 1501
Electrical Detection of Deoxyribonucleic Acid Hybridization With AlGaN/GaN High Electron Mobility Transistors ByoungSam KangS. J. PeartonK. J. Linthicum OriginalPaper 31 January 2007 Article: 1406
AlGaN/GaN-sensors for Monitoring of Enzyme Activity by pH-Measurements Gabriel KittlerArmin SpitznasOliver Ambacher OriginalPaper 07 February 2007 Article: 1403
The Influence of Device Structure on High-electric-field Effects and Reliability of AlGaN/GaN HFETs Weiwei KuangRobert J. TrewYueying Liu OriginalPaper 07 February 2007 Article: 1401
Ultrathin AlN/GaN Heterojunctions by MBE for THz Applications Yu CaoDebdeep Jena OriginalPaper 31 January 2007 Article: 1305
Nanoparticle-loaded encapsulation materials for light-emitting diode applications Frank Wilhelm MontH. LuoR. W. Siegel OriginalPaper 31 January 2007 Article: 1302
1.37 - 2.90 Micron Intersubband Transitions in GaN/AlN Superlattices Eric Anthony DeCuir Jr.Emil FredDaniel Hofstetter OriginalPaper 07 February 2007 Article: 1301
Phonon Decay in GaN and AlN and Self-Heating in III-N Devices Mark HoltzD. Y. SongH. Helava OriginalPaper 07 February 2007 Article: 1211
Localisation of Excitation in InGaN Epilayers and Quantum wells Kevin Peter O’Donnell OriginalPaper 23 May 2007 Article: 1207
Optical Properties of Nearly Lattice-matched AlInN/GaN Single Quantum Wells with Varying Well-widths Lay-Theng TanRobert W. MartinKevin P. O’Donnell OriginalPaper 07 February 2007 Article: 1206
Investigation of the Optical Properties of epitaxial-lateral-overgrown GaN on R- and M- plane Sapphire Tobias GuhneZahia BougriouaPierre Gibart OriginalPaper 16 April 2007 Article: 1204
Optical Properties of Undoped, n-Doped and p-Doped GaN/AlN Superlattices Plamen PaskovBo MonemarIsamu Akasaki OriginalPaper 07 February 2007 Article: 1203
Piezoelectric Fields in Tilted GaInN Quantum Wells Martin FenebergFrank LipskiFerdinand Scholz OriginalPaper 14 May 2007 Article: 1202
Design and Optimization of GaN-based Semiconductor Saturable Absorber Mirror Operating at Around 415 nm Fen LinNing XiangSoo Jin Chua OriginalPaper 31 January 2007 Article: 1201
Thermodynamic Analysis of Impurities in the Sublimation Growth of AlN Single Crystals Li DuJames H. Edgar OriginalPaper 31 January 2007 Article: 1105
Structural Defects in Laterally Overgrown GaN Layers Grown on Non-polar Substrates Zuzanna Liliental-WeberX. NiH. Morkoc OriginalPaper 31 January 2007 Article: 1104
A Study of Defects and Surface Properties in AlGaN/GaN High Electron Mobility Transistors (HEMTs) Grown by MOCVD on Semi-Insulating SiC Substrates Yongkun SinHyun I. KimGary Stupian OriginalPaper 31 January 2007 Article: 1102
Preparation of High Conductive Cubic Boron Nitride Thin Films by in-situ zinc Doping Kenji NoseToyonobu Yoshida OriginalPaper 31 January 2007 Article: 1101
Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition C. UgoliniN. NepalJ. M. Zavada OriginalPaper 07 February 2007 Article: 1005
Photoluminescence from Gd-implanted AlN and GaN Epilayers John M. ZavadaNeeraj NepalS. J. Pearton OriginalPaper 16 April 2007 Article: 1002
Characterization of Non-Polar Surfaces in HVPE Grown Gallium Nitride Kun-Yu LaiJudith A. GrenkoA. D. Hanser OriginalPaper 31 January 2007 Article: 905
Experimental Analysis of the Spontaneous Polarization Field in GaN by UHV-cathodoluminescence Martina FinkeDaniel FuhrmannAndreas Hangleiter OriginalPaper 31 January 2007 Article: 904
High Resolution Transmission Electron Microscopy Study of Thermal Oxidation of Single Crystalline Aluminum Nitride Jharna ChaudhuriRac Gyu LeePeng Li OriginalPaper 23 March 2007 Article: 901
