Volume 95, Issue 1

Search all MRS Online Proceedings Library articles

December 1987

Semiconductors — Pure and Hydrogenated

Issue Editors:

D. Adler,
Y. Hamakawa,
A. Madan,
M. Thompson

96 articles in this issue

Electronic States in Amorphous Solids, Liquids, and Alloys
Y. Bar-Yam
D. Adler
J. D. Joannopoulos
OriginalPaper 26 February 2011 Pages: 3 - 12
Hydrogen Diffusion and Thermal Equilibrium of Electronic States in a-Si:H
R. A. Street
OriginalPaper 26 February 2011 Pages: 13 - 22
Defect Dynamics and the Properties of Amorphous Silicon – a New Perspective
Sokrates T. Pantelides
OriginalPaper 26 February 2011 Pages: 23 - 32
The Role of Lattice Relaxation in the Competition Between Optical and Thermal Transitions from Gap States in Hydroacenated Amorphous Silicon
A. V. Gelatos
J. D. Cohen
J. P. Harbison
OriginalPaper 26 February 2011 Pages: 33 - 38
Substitutional and Interstitial Doping of Amorphous Silicon Nitride
W. E. Spear
B. Dunnett
P. G. Lecomber
OriginalPaper 26 February 2011 Pages: 39 - 49
States in the Gap of Doped and Undoped a-Si:H Studied by Photomodulation Spectroscopy
T. X. Zhou
Z. Vardeny
J. Tauc
OriginalPaper 26 February 2011 Pages: 51 - 56
The Effects of Coordination and Local Disorder on Impurity States in Hydrogenated Amorphous Silicon
C. S. Nichols
C. Y. Fong
OriginalPaper 26 February 2011 Pages: 57 - 63
Charge Carrier Relaxation after Subbandgap Excitation in Doped a-Si:H
A. Werner
M. Kunst
OriginalPaper 26 February 2011 Pages: 65 - 69
Capacitance Studies of Ion-Implanted N-Type Hydrogenatfd Amdrphous Silicon
C. E. Michelson
J. D. Cohen
J. P. Harbison
OriginalPaper 26 February 2011 Pages: 71 - 76
Application of a Low Frequency Technique to the Study of Amorphous Materials.
C. Pickup
R. W. Cochrane
G. Perluzzo
OriginalPaper 26 February 2011 Pages: 77 - 82
Deep States in a-Si:H - Changes with Doping and Applied Stress.
J. Kočka
M. Vanéček
OriginalPaper 26 February 2011 Pages: 83 - 88
A Study of the State Distribution in Various a-Si:H Materials by a New Capacitance Method
I. Balberg
OriginalPaper 26 February 2011 Pages: 89 - 94
Time-of-Flight Measurements in a-Si:H Between Room Temperature and 130° C°
D. S. Shen
S. Aljishi
S. Wagner
OriginalPaper 26 February 2011 Pages: 95 - 100
Drift Mobility Measurements Under Single and Double Injection in a-Si:H
L. Xu
G. Winborne
V. Cannella
OriginalPaper 26 February 2011 Pages: 101 - 106
Theoretical Analysis of Sweep-Out Experiments in Doped Hydrogenated Amorphous Silicon Films
Marvin Silver
Howard M. Branz
David Adler
OriginalPaper 26 February 2011 Pages: 107 - 112
Experimental Study of Sweep-Out in N-Type Hydrogenated Amorphous Silicon
G. Winborne
L. XU
H. M. Branz
OriginalPaper 26 February 2011 Pages: 113 - 118
Charge Carrier Recombination in Doped a-Si:H Studied by Contactless Photoconductivity Measurements
A. Werner
M. Kunst
OriginalPaper 26 February 2011 Pages: 119 - 123
Photoconductivity Decay in Amorphous Semiconductors
William Pickin
Doroteo Mendoza
Juan Carlos Alonso
OriginalPaper 26 February 2011 Pages: 125 - 130
Phosphorus and Boron Doping of a-Si:H Effects of Deposition Temperature
M. J. M. Pruppers
K. H. M. Maessen
W. F. van der Weg
OriginalPaper 26 February 2011 Pages: 131 - 136
Effect of Low Level Doping of Boron and Phosphorus on the Properties of Amorphous Silicon Films
N. T. Tran
K. A. Epstein
G. D. Vernstrom
OriginalPaper 26 February 2011 Pages: 137 - 144
Method for the Reduction of Photothermal Deflection Spectroscopy Data Taken on Amorphous Silicon (a-Si:H)
S. Wiedeman
M. S. Bennett
J. L. Newton
OriginalPaper 26 February 2011 Pages: 145 - 150
NMR Investigation of the Local Dopant-Hydrogen Configuration in Amorphous Silicon
S. E. Ready
J. B. Boyce
OriginalPaper 26 February 2011 Pages: 153 - 157
Possible Diffusion of Molecular Hydrogen Along Microvoids in Device-Quality a-Si:H
E. J. Vanderheiden
W. D. Ohlsen
P. C. Taylor
OriginalPaper 26 February 2011 Pages: 159 - 164
Hydrogen Diffusion in Undoped a-Si:H
S. F. Chou
R. Schwarz
S. Wagner
OriginalPaper 26 February 2011 Pages: 165 - 170
Hydrogen Microstructure in Amorphous Semiconductors.
Karen K. Gleason
Mark A. Petrich
Jeffrey A. Reimer
OriginalPaper 26 February 2011 Pages: 171 - 176
A Structural Analysis of Thin Amorphous Silicon Films
Ş. Erkoç
T. Halicioglu
W. A. Tiller
OriginalPaper 26 February 2011 Pages: 177 - 182
Porous Morphology and Oxidation Kinetics in a-Si:H RF Sputtered by He/H₂
J. Shinar
R. Shinar
T. D. Moustakas
OriginalPaper 26 February 2011 Pages: 183 - 189
Composition Oxidation and Chemical Etching Properties of a New Amorphous Silicon-Boron Thin Film
B. Y. Tong
S. K. Wong
P. K. John
OriginalPaper 26 February 2011 Pages: 191 - 196
Quantitative Measurement of Hydrogen Content in a-Si:H by Ar⁺ Excited Auger.
M. H. Farias
G. A. Hirata
R. Asomoza
OriginalPaper 26 February 2011 Pages: 197 - 200
Hydrogen Content and the Optical Bandgap in Amorphous Silicon
K. M. H. Maessen
M. J. M. Pruppers
W. F. van der Weg
OriginalPaper 26 February 2011 Pages: 201 - 205
Identification of Chemical Growth Mechanisms in Amorphous Semiconductors
Jeffrey A. Reimer
Michael J. Mccarthy
Philip W. Morrison Jr
OriginalPaper 26 February 2011 Pages: 209 - 217
Film Growth Mechanisms of Amorphous Silicon in Diode and Triode Glow Discharge Systems
C. C. Tsai
J. G. Shaw
J. C. Knights
OriginalPaper 26 February 2011 Pages: 219 - 224
Growth of Amorphous and Crystalline Silicon by HR-CVD (Hydrogen Radical Enhanced CVD)
N. Shibata
K. Fukuda
I. Shimizu
OriginalPaper 26 February 2011 Pages: 225 - 235
Amorphous Silicon Deposition Diagnostics Using Coherent Anti-Stokes Raman Spectroscopy
Y. H. Shing
J. W. Perry
G. Radhakrishnan
OriginalPaper 26 February 2011 Pages: 237 - 242
Thermal Equilibration and Growth of Doped Amorphous Silicon
J. Kakalios
R. A. Street
R. Weisfield
OriginalPaper 26 February 2011 Pages: 243 - 248
Influence of Plasma Excitation Frequency on Deposition Rate and on Film Properties for Hydrogenated Amorphous Silicon
H. Curtins
N. Wyrsch
A. V. Shah
OriginalPaper 26 February 2011 Pages: 249 - 253
Preparation and Properties of Hydrogenated Amorphous Silicon Produced by Plasma-Enhanced Chemical Vapor Decomposition of Silane
K. L. Tokuda
D. Adler
R. Reif
OriginalPaper 26 February 2011 Pages: 255 - 260
High Quality Amorphous Silicon Prepared by Catalytic Chemical Vapor Deposition (CTL-CVD) Method
Hideki Matsumura
OriginalPaper 26 February 2011 Pages: 261 - 266
Deposition of a-SiNx Films by ArF Laser Induced CVD as Diagnosed by Optical Emission Spectroscopy
S. Nishikawa
H. Matsuhashi
S. Ushio
OriginalPaper 26 February 2011 Pages: 267 - 272
Interaction of Reactive Species Obtained by G-D Silane Decomposition with Si(111) and a-Si:H Surfaces
S. A. Cruz
V. M. Mendez-Rosales
OriginalPaper 26 February 2011 Pages: 273 - 278
Comparison of Properties of a-Si_1−x Ge_x:H and a-Si_1−x Ge_x:H:F
K. D. Mackenzie
W. Paul
OriginalPaper 26 February 2011 Pages: 281 - 292
Photoluminescence in Hydrogenated Silicon-Germanium Alloys
R. Ranganathan
M. Gal
P. C. Taylor
OriginalPaper 26 February 2011 Pages: 293 - 298
IR-Spectroscopy and Electronic Properties of RF Magnetron Sputtered a-SiA:H (A=C,Ge) Films
H. Rubel
B. Schröder
OriginalPaper 26 February 2011 Pages: 299 - 304
Exafs Study of a-Si_1−xGe_x:H, a-Si_1−x C_x:H and a-Si_1−xN_x:H at the Si K-Edge
A. Filipponi
P. Fiorini
S. Mobilio
OriginalPaper 26 February 2011 Pages: 305 - 310
High-Quality a-Si-Based Alloys : a-SiGe Films Fabricated in a Super Chamber and Superlattice Structure a-Si Films Prepared by a Photo-CVD Method
Shinya Tsuda
Hisao Haku
Yukinori Kuwano
OriginalPaper 26 February 2011 Pages: 311 - 316
Comparative Study of Structure and Hydrogen Incorporation in Glow Discharge a-Si:C:H and a-Si:N:H Alloys
W. Beyer
H. Wagner
H. Mell
OriginalPaper 26 February 2011 Pages: 317 - 322
Recombination and Electronic Transport in Low-Gap a-Si,Ge:H,F Alloys
S. Aljishi
D. S. Shen
S. Wagner
OriginalPaper 26 February 2011 Pages: 323 - 328
Carbon Local Bonding Configurations in Amorphous Hydrogenated Silicon-Carbon Alloys
Mark A. Petrich
Jeffrey A. Reimer
OriginalPaper 26 February 2011 Pages: 329 - 334
Predictions on the Physical Properties of Amorphous Carbon-Tin Semiconducting Alloys: II Photoconductivity Properties
Prosper Mpawenayo
OriginalPaper 26 February 2011 Pages: 335 - 340
Estimation of Defect State Densities from Bulk Photoelectronic Properties of a-Si,Ge:H Alloys
G. N. Parsons
G. Lucovsky
OriginalPaper 26 February 2011 Pages: 341 - 346

Volume 95, Issue 1

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