Volume 92, Issue 1

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December 1987

Symposium B — Rapid Thermal Processing of Electronic Materials

Issue Editors:

D.E. Davies,
R. Powell,
S.R. Wilson

67 articles in this issue

Rapid Thermal Processing: How Well is it Doing and Where is it Going?
T. O. Sedgwick
OriginalPaper 01 December 1987 Pages: 3 - 12
Dopant Incorporation of Boron Implanted Silicon During Rapid Thermal Annealing
Hung-Yu Liu
Peng-Heng Chang
OriginalPaper 01 December 1987 Pages: 15 - 20
Properties Of High Dose Low Temperature Rapid Thermally Annealed Gallium Implanted Silicon
Y. H. Lee
H. B. Harrison
G. L. Olson
OriginalPaper 01 December 1987 Pages: 21 - 26
A Study of Diffusion, Clustering and Defects in As+ And Bf₂+ Implanted Silicon During Scanning Electron Beam Annealing.
Michael J. Hart
Alan G. R. Evans
John L. Altrip
OriginalPaper 01 December 1987 Pages: 27 - 32
Enhanced Diffusion During Rapid Thermal Annealing Of Indium And Boron In Double Implanted Silicon
E. Ganin
G. A. Sai-Halasz
T. O. Sedgwick
OriginalPaper 01 December 1987 Pages: 33 - 38
Nuclear Reaction Analysis of Shallow B And Bf₂ Implants in Si
Mark C. Ridgway
P. J. Scanlon
J. L. Whitton
OriginalPaper 01 December 1987 Pages: 39 - 40
The Redistribution of Impurities Under RTP for Polysilicon Capped Silicon
R. S. Hockett
OriginalPaper 01 December 1987 Pages: 41 - 45
Epitaxial Alignment of as Implanted Polysilicon Emitters
J. L. Hoyt
E. F. Crabbé
R. F. W. Pease
OriginalPaper 01 December 1987 Pages: 47 - 52
Drift of Arsenic in SiO₂ in a Lamp Furnace With a Built-In Temperature Gradient
G. K. Celler
L. E. Trimble
T. T. Sheng
OriginalPaper 01 December 1987 Pages: 53 - 58
Applications of Pulsed Co₂ Laser Processing of Silicon
B. James
OriginalPaper 01 December 1987 Pages: 59 - 64
Characterization of Shallow Junctions Fabricated by Gas Immersion Laser Doping (Gild)
P. G. Carey
J. E. Turner
T. W. Sigmon
OriginalPaper 01 December 1987 Pages: 65 - 70
Rapid Thermal/Plasma Processing for In-Situ Dielectric Engineering (Invited)
Mehrdad M. Moslehi
OriginalPaper 01 December 1987 Pages: 73 - 87
Rapid Thermal Annealing of Low Temperature Silicon Dioxide Films
J. T. Fitch
G. Lucovsky
OriginalPaper 01 December 1987 Pages: 89 - 94
Process and Equipment Issues in Rapid Thermal Oxidation (RTO)
Sandeep Mehta Sandeep Mehta
David Hodul David Hodul
OriginalPaper 01 December 1987 Pages: 95 - 101
Kinetics of Rapid Thermal Oxidation of Silicon
Stephan E. Lassig
Thomas J. Debolske
John L. Crowley
OriginalPaper 01 December 1987 Pages: 103 - 108
Characteristics of Thin Layers of SiO₂ Fabricated by Rapid Thermal Oxidation
S. Prasad
J. Haase
D. Haack
OriginalPaper 01 December 1987 Pages: 109 - 114
A Comparison of RTO and Furnace Oxides
Marie E. Burnham
Ronald N. Legge
James F. Brown
OriginalPaper 01 December 1987 Pages: 115 - 120
Rapid Thermal Nitridation of Thin Oxides
D. K. Shih
S. K. Lee
S. Lee
OriginalPaper 01 December 1987 Pages: 121 - 125
Rapid Thermal Processing of Gate Dielectric Films and their Characterization
D. L. Flowers
J. Nulman
J. P. Krusius
OriginalPaper 01 December 1987 Pages: 127 - 132
Comparison of the Growth Kinetics of Oxides Grown in Tungsten-Halogen and Water Cooled Arc Lamp Systems
C. A. Paz de Araujo
J. C. Gelpey
R. Kwor
OriginalPaper 01 December 1987 Pages: 133 - 140
In-Situ Processing of Silicon Dielectrics by Rapid Thermal Processing: Cleaning, Growth, and Annealing
J. Nulman
OriginalPaper 01 December 1987 Pages: 141 - 146
Oxidation of Silicon and Nitridaticn of SiO₂ by Rapid Thermal Processes
N. Chan Tung
Y. Caratini
J. L. Buevoz
OriginalPaper 01 December 1987 Pages: 147 - 151
Rapid Thermal Processing for Self-Aligned Silicide Technology
Y. H. Ku
S. K. Lee
D. L. Kwong
OriginalPaper 01 December 1987 Pages: 155 - 164
Effects of Tisi_x/Tin_x/Al Contact Metallization Process on the Shallow Junction Related Properties
S. W. Sun
F. Pintchovski
R. L. Hance
OriginalPaper 01 December 1987 Pages: 165 - 170
Low Temperature Rapid Thermal Formation of Tin Barrier Layers
Barney Cohen Barney Cohen
Jaim Nulman Jaim Nulman
OriginalPaper 01 December 1987 Pages: 171 - 176
Resistivity Differences in C49 Tisi₂ Films Formeid by Rapid Thermal Processing
A. H. Reader
A. H. Van Ommen
H. J. W. Van Houium
OriginalPaper 01 December 1987 Pages: 177 - 182
Characterization of Process Uniformity and Control of Titanium Silicide Formed by Rapid Thermal Processing (RTP)
David Hodul David Hodul
Sandeep Mehta Sandeep Mehta
OriginalPaper 01 December 1987 Pages: 183 - 189
High Purity Titanium Silicide Films Formed by Sputter Deposition and Rapid Thermal Annealing
T. Brat
J. C. S. Wei
C. Wickersham Jr.
OriginalPaper 01 December 1987 Pages: 191 - 198
Shallow Junction Formation by the Redistribution of Species Implanted into Cobalt Silicide
Brian M. Ditchek
Marvin Tabasky Marvin Tabasky
Emel S. Bulat
OriginalPaper 01 December 1987 Pages: 199 - 204
omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing
E. Ma
M. Natan
M-A. Nicolet
OriginalPaper 01 December 1987 Pages: 205 - 211
Raman Scattering from Rapid Thermally Annealed Tungsten Silicide
Samhita Dasgupta
Sandeep Kumar
Joseph T. Boyd
OriginalPaper 01 December 1987 Pages: 213 - 217
Application of RTA To Bipolar Ic’S
Robert H. Reuss
Thomas P. Bushey
OriginalPaper 01 December 1987 Pages: 221 - 226
Control of Bipolar Junction Transistor Current Grain Using Rapid Thermal Processing.
A. Kermani
F. Van Gieson
J. L. Crowley
OriginalPaper 01 December 1987 Pages: 227 - 233
The Effect of Rapid Thermal Processing on the Electrical Characteristics of Polysilicon Gate Mos Capacitors
Susan B. Felch
David T. Hodul
Mak Salimian Mak Salimian
OriginalPaper 01 December 1987 Pages: 235 - 239
An Electrical Characterization of Sol Films Using Devices Formed by Oxygen Implant and Rapid Thermal Processing
Jim D. Whitfield
Marie E. Burnham
Syd. R. Wilson
OriginalPaper 01 December 1987 Pages: 241 - 246
Rapid Thermal Processing — A User’S Perspective
R. T. Fulks
OriginalPaper 01 December 1987 Pages: 249 - 257
Silicon Temperature and Thermal Gradients Measurements in a Rapid Thermal Processor Operating at Atmospheric Pressure or in Vacuum
J-M. Dilhac
C. Ganibal
A. Martinez
OriginalPaper 01 December 1987 Pages: 259 - 263
Slip Free Rapid Thermal Processing
Julian Blake
Jeffrey C. Gelpey
Ron Capodilupo
OriginalPaper 01 December 1987 Pages: 265 - 272
A Method for Rapid Thermal Annealing of Compound Semiconductors by Cw CO₂ Laser Irradiation
U. Neta
V. Richter
R. Kalish
OriginalPaper 01 December 1987 Pages: 273 - 278
Limited Reaction Processing: Silicon and III–V Materials
James F. Gibbons
S. Reynolds
R. Hull
OriginalPaper 01 December 1987 Pages: 281 - 294
Microwave Plasma LPCVD of Tungsten in a Cold-Wall Lamp-Heated Rapid Thermal Processor
Mehrdad M. Moslehi
Krishna C. Saraswat
Steven C. Shatas
OriginalPaper 01 December 1987 Pages: 295 - 303
Limited Reaction Processing: Growth of III-V Epitaxial Layers by Rapid Thermal Metalorganic Chemical Vapor Deposition
S. Reynolds
D. W. Vook
J. F. Gibbons
OriginalPaper 01 December 1987 Pages: 305 - 310
Rapid Thermal Annealing of Amorphous Hydrogenated Carbon (a-C:H) Films
Samuel A. Alterovitz
John J. Pouch
Joseph D. Warner
OriginalPaper 01 December 1987 Pages: 311 - 316
Defect Structures and Electrical Behavior of Rapid Thermally Annealed Ion Implanted Silicon
D. K. Sadana
OriginalPaper 01 December 1987 Pages: 319 - 328
Properties of Gallium Implanted Furnace and Rapidly Annealed Polycrystalline Silicon
H. B. Harrison
A. P. Pogany
Y. Komem
OriginalPaper 01 December 1987 Pages: 329 - 333
Secondary Grain Growth During Rapid Thermal Annealing of Doped Polysilicon Films
R. C. Cammarata
C. V. Thompson
S. M. Garrison
OriginalPaper 01 December 1987 Pages: 335 - 339
Rapid Thermal Annealing of Oxygen-Vacancy Centers In O-Implanted Silicon
H. J. Stein
OriginalPaper 01 December 1987 Pages: 341 - 345
The Effect of Rapid Thermal Treatment on the Structural and Optoelectronic Properties of Epitaxial Gaas on Si Grown With or Without Ge Intermediate Layers
El-Hang Lee
M.Abdul Awal
S. J. Pearton
OriginalPaper 01 December 1987 Pages: 347 - 352
Point Defect Evolution During Rapid Thermal Annealing of Si⁺-Implanted GaAs
M. Levinson
C. A. Armiento
S. S. P. Shah
OriginalPaper 01 December 1987 Pages: 353 - 358
Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs
Akio Kitagawa
Yutaka Tokuda
Hiroyuki Kano
OriginalPaper 01 December 1987 Pages: 361 - 365

Volume 92, Issue 1

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