Volume 918, Issue 1

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December 2006

Symposium H — Chalcogenide Alloys for Reconfigurable Electronics

24 articles in this issue

Preparation of Ge₂Sb₂Te₅ Thin Film for Phase Change Random Access Memory by RF Magnetron Sputtering and DC Magnetron Sputtering
Shin Kikuchi
Dong Yong Oh
Koukou Suu
OriginalPaper 01 July 2006 Article: 7100810
Dielectric Constants and Endurance of Chalcogenide Phase-Change Non-Volatile Memory
Semyon D. Savransky
Eugenio F. Prokhorov
OriginalPaper 01 July 2006 Article: 7060806
Ag-Sb-S Thin Films Prepared by RF Magnetron Sputtering and Their Properties
Jan Gutwirth
Tomas Wagner
Helena Ticha
OriginalPaper 01 July 2006 Article: 7010801
Kinetics of optically-induced crystallization and structure of Agx(As0.48S0.26Se0.26)100-x chalcogenide films.
Milos Krbal
Tomas Wagner
Petr Bezdicka
OriginalPaper 01 July 2006 Article: 6300703
Impact of Material Crystallization Characteristics on the Switching Behavior of the Phase Change Memory Cell
Thomas Gille
Ludovic Goux
Dirk J. Wouters
OriginalPaper 01 July 2006 Article: 6020702
Localized Light Focusing and Super Resolution Readout via Chalcogenide Thin Film
Junji Tominaga
Paul Fons
Stephane Petit
OriginalPaper 01 July 2006 Article: 6010701
A Computational Study of Oxygen Contamination in Sb₂Te₃
John E. Boyd
Arthur Edwards
Andrew C. Pineda
OriginalPaper 01 July 2006 Article: 5110611
Modeling Considerations for Phase Change Electronic Memory Devices
Guy Wicker
OriginalPaper 01 July 2006 Article: 5060606
Investigation on Ultra-high Density and High Speed Non-volatile Phase Change Random Access Memory (PCRAM) by Material Engineering
E. G. Yeo
L. P Shi
T. C. Chong
OriginalPaper 01 July 2006 Article: 5050605
Thermal Analysis and Structural Design of Phase Change Random Access Memory
Rong Zhao
Ler Ming Lim
Tow Chong Chong
OriginalPaper 01 July 2006 Article: 5020602
OUM Nonvolatile Semiconductor Memory Technology Overview
Stephen J. Hudgens
OriginalPaper 01 July 2006 Article: 5010601
Phase Transformations in Bulk (Ge2Se7)88Bi5Sb7
Guy J. Adriaenssens
OriginalPaper 01 July 2006 Article: 806
Characteristics of Si-Sb-Te Films for Phase Change Memory
Jie Feng
Yin Zhang
Bomy Chen
OriginalPaper 01 July 2006 Article: 804
Laser Synthesis of Sn-Ge-Sb-Te Phase Change Materials
W. D. Song
L. P. Shi
T. C. Chong
OriginalPaper 01 July 2006 Article: 803
What Makes Phase-Change Chalcogenide Alloys Materials of Choice for Optical Data Storage
Alexander Kolobov
Paul Fons
Junji Tominaga
OriginalPaper 01 July 2006 Article: 405
Phase Change Materials - From Structures to Kinetics
Matthias Wuttig
Wojciech Welnic
Christoph Steimer
OriginalPaper 01 July 2006 Article: 403
Why phase-change Materials work: An EXAFS Investigation of Ge-Sb-Te Alloys
D. A. Baker
S. C. Agarwal
P. C. Taylor
OriginalPaper 01 July 2006 Article: 402
Understanding Structural Changes in Phase Change Memory Alloys
Paul Fons
Dale Brewe
Junji Tominaga
OriginalPaper 01 July 2006 Article: 401
Fast Photodarkening in Amorphous and Liquid Chalcogenide
Yoshifumi Sakaguchi
Kozaburo Tamura
OriginalPaper 01 July 2006 Article: 303
Photo-induced Metastable State of S₈ Clusters in Liquid Sulfur
Yoshifumi Sakaguchi
Kozaburo Tamura
OriginalPaper 01 July 2006 Article: 302
Simulating Liquid GeTe
James R. Chelikowsky
OriginalPaper 01 July 2006 Article: 301
Structural and Optical Properties of Amorphous Ge₂Sb₂Te₅
Heng Li
T. Ju
C. E. Inglefield
OriginalPaper 01 July 2006 Article: 205
Photo-Oxidation and the Absence of Photodarkening in Ge₂Sb₂Te₅ Phase Change Material
Bong-Sub Lee
Ying Xiao
P. Craig Taylor
OriginalPaper 01 July 2006 Article: 204
Electronic and Atomic Structure of Ge2Sb2Te5 phase change memory material
John Robertson
Ka Xiong
Paul Peacock
OriginalPaper 01 July 2006 Article: 102

Volume 918, Issue 1

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