Volume 917, Issue 1

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December 2006

Symposium E — Gate Stack Scaling — Materials Selection, Role of Interfaces, and Reliability Implications

Issue Editors:

R. Jammy,
A. Shanware,
Y. Tsunashima,
S. De Gendt

30 articles in this issue

Study of Magnetron Sputter Deposition of Metal Gate Electrodes
Mengqi Ye
Dave Liu
Khaled Ahmed
OriginalPaper 01 December 2006 Article: 1205
Metal Electrodes Work Function Measurement at Deca-Nanometer Scale using Kelvin Probe Force Microscope: a Step Forward to the Comprehension of Deposition Techniques Impact on Devices Electrical Properties
Nicolas Gaillard
Denis Mariolle
Ahmad Bsiesy
OriginalPaper 01 December 2006 Article: 1204
Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology
Raghunath Singanamalla
Judit Lisoni
Kristin de Meyer
OriginalPaper 01 December 2006 Article: 1202
Investigation on the Work Function of Tungsten and Thermal stability of W/SiO₂/Si, W/SiON/Si and W/HfO₂/Si Gate Stacks
Pei-Chuen Jiang
Jen-Sue Chen
F. S. Lee
OriginalPaper 01 December 2006 Article: 1201
Area Selective Atomic Layer Deposition by Soft Lithography
Rong Chen
David W. Porter
Stacey F. Bent
OriginalPaper 01 December 2006 Article: 1105
Highly Scalable ALD-deposited Hafnium Silicate Gate Stacks for Low Standby Power Applications
Johan Swerts
Wim Deweerd
Glen Wilk
OriginalPaper 01 December 2006 Article: 1104
Characterization of HfO₂/Si Exposed to Water Vapor at Room Temperature
Carlos Driemeier
Elizandra Martinazzi
Evgeni Gusev
OriginalPaper 01 December 2006 Article: 1102
Surface Preparation Techniques for the Atomic Layer Deposition of Hafnium Oxide
Laura Nyns
Lindsey Hall
Stefan De Gendt
OriginalPaper 01 December 2006 Article: 1005
Interface Engineering During Epitaxial Growth of High-K Lanthanide Oxides on Silicon
H. Joerg Osten
Malte Czernohorsky
Andreas Fissel
OriginalPaper 01 December 2006 Article: 1004
Processing Impact on Electrical Properties of Lanthanum Silicate Thin Films
Jesse Stephen Jur
Daniel J. Lichtenwalner
Angus I. Kingon
OriginalPaper 01 December 2006 Article: 1003
Silicate Formation at the Interface of high-k dielectrics and Si(001) Surfaces
Dieter Schmeisser
F. Zheng
H. J. Engelmann
OriginalPaper 01 December 2006 Article: 1002
In situ ATR - FTIR spectroscopy of Hf(IV) tert butoxide adsorption on Si and Ge
Shilpa Dubey
Keijing Li
Tonya M. Klein
OriginalPaper 01 December 2006 Article: 903
Non-contact Corona-Kelvin based Metrology for High-k Dielectric Characterization with an Extension to Micro-Scale Measurement
Marshall Wilson
Dmitriy Marinskiy
Jacek Lagowski
OriginalPaper 01 December 2006 Article: 901
Ru/Ta Alloying Behavior and its Implications for Laminate Based CMOS Integration
Judit G. Lisoni
Tom Schram
Stefan De Gendt
OriginalPaper 01 December 2006 Article: 804
Correlation of Phase Segregation and Electrical Properties of Low-Power MOSFETs with Hf-based Silicate Gate Dielectric Layers and TaN Metal Gates
Jasmine Petry
Chris Rittersma
Jan G. M. Van Berkum
OriginalPaper 01 December 2006 Article: 704
A Comparison of Electrical and Physical Properties of MOCVD Hafnium Silicate Thin Films Deposited using Various Silicon Precursors
P. Jamison
M. Copel
W. Zhu
OriginalPaper 01 December 2006 Article: 703
Interfacial layer bonding and Dielectric properties of Hf-O-N gate dielectric thin films
Karthik Ramani
Chad Robert Essary
Rajiv K. Singh
OriginalPaper 01 December 2006 Article: 702
Influence of Intrinsic Defects and Strain on Electronic Reliability of Gate Oxide films
Ken Suzuki
Yuta Ito
Hideo Miura
OriginalPaper 01 December 2006 Article: 528
Enhanced Phonon-Energy Coupling: Dramatic Reduction of Leakage Current of Silicon Oxide
Zhi Chen
Jun Guo
Chandan B. Samantaray
OriginalPaper 01 December 2006 Article: 525
The Development of Zero-temperature-gradient Zero-bias Thermally Stimulated Current (ZTGZBTSC) Spectroscopy Technique for the Detection of Defect States in Ultra-thin High-k Dielectric Films
Wai Shing Lau
Kum Fai Wong
N. P. Sandler
OriginalPaper 01 December 2006 Article: 518
Metal Transport and Loss in Hafnium and Lanthanum Aluminate Films on Si Hampered by Thermal Nitridation
Leonardo Miotti
Carlos Driemeier
Bernard Agius
OriginalPaper 01 December 2006 Article: 517
Chemical Vapor Deposition of Zr_xTi_1-xO and Hf_xTi_1-xO Thin Films Using the Composite Anhydrous Nitrate Precursors
Qi-Yue Shao
Ai-Dong Li
Nai-Ben Ming
OriginalPaper 01 December 2006 Article: 513
Preparation and Characterization of Rare Rarth Scandate Thin Films as an Alternative gate dielectric
M. Wagner
T. Heeg
S. Mantl
OriginalPaper 01 December 2006 Article: 510
Thermal Stability of Ru Gate Electrode on HfSiO Dielectric
Karol Frohlich
Juan Pedro Espinos
Kristina Husekova
OriginalPaper 01 December 2006 Article: 502
A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO² Gate Dielectrics
Rashmi Jha
Jiyoung Chung
Veena Misra
OriginalPaper 01 December 2006 Article: 405
Impact of TiN/HfO₂ Integration on Carrier Mobility
Mikael Casse
Laurent Thevenod
Fabien Boulanger
OriginalPaper 01 December 2006 Article: 404
Investigation of NBTI Recovery During Measurement
Robert Entner
Tibor Grasser
Rainer Minixhofer
OriginalPaper 01 December 2006 Article: 302
Control of Interfacial Structure and Electrical Properties in MBE Grown Single Crystalline SrTiO₃ Gate Dielectrics on Si(100)
Gerd Norga
Chiara Marchiori
Christel Dieker
OriginalPaper 01 December 2006 Article: 206
Wet Chemical Cleaning of Germanium Surfaces for Growth of High-k Dielectrics
Sandrine Rivillon Amy
Yves J. Chabal
Paul Kirsch
OriginalPaper 01 December 2006 Article: 105
Effects of Nitrogen Reactive Species on Germanium Plasma Nitridation Processes
Takuya Sugawara
Raghavasimhan Sreenivasan
Paul C. McIntyre
OriginalPaper 01 December 2006 Article: 102

Volume 917, Issue 1

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