Volume 913, Issue 1

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December 2005

Symposium D — Transistor Scaling — Methods, Materials and Modeling

Issue Editors:

W-C. Lee,
F. Nouri,
S. Thompson,
W. Tsai

29 articles in this issue

TCAD Modeling and Simulation of Sub-100nm Gate Length Silicon and GaN based SOI MOSFETs
Lei Ma
Yawei Jin
Doug William Barlage
OriginalPaper 04 August 2006 Article: 509
3D Modelling Of The Novel Nanoscale Screen-Grid FET
Pei W. Ding
Kristel Fobelets
Jesus E Velazquez-Perez
OriginalPaper 17 August 2006 Article: 508
Predictive Model for B Diffusion in Strained SiGe Based on Atomistic Calculations
Chihak Ahn
Jakyoung Song
Scott T Dunham
OriginalPaper 17 August 2006 Article: 507
TCAD Modeling of Strain-Engineered MOSFETs
Lee Smith
OriginalPaper 04 August 2006 Article: 505
A Physically Based Quantum Correction Model for DG MOSFETs
Markus Karner
Martin Wagner
Hans Kosina
OriginalPaper 17 August 2006 Article: 504
Stress and Strain Measurements in Semiconductor Device Channel Areas by Convergent Beam Electron Diffraction
Jinghong Li
Anthony Domenicucci
Hung Ng
OriginalPaper 04 August 2006 Article: 503
Diffraction from Periodic Arrays of Oxide-Filled Trenches in Silicon: Investigation of Local Strains
Michel Eberlein
Stephanie Escoubas
Romain Coppard
OriginalPaper 18 August 2006 Article: 502
Using Quantitative TEM Analysis of Implant Damage to Study Surface Recombination Velocity in Silicon
Jennifer Lee Gasky
Sophya Morghem
Kevin Jones
OriginalPaper 14 July 2006 Article: 501
Electron Thermal Transport Properties of a Quantum Dot
Xanthippi Zianni
OriginalPaper 14 September 2006 Article: 408
Nano-Scale MOSFET Devices Fabricated Using a Novel Carbon-Nanotube-based Lithography
Jaber Derakhshandeh
Yaser Abdi
C. J. Bennett
OriginalPaper 14 July 2006 Article: 407
Low Temperature Selective Si and Si-Based Alloy Epitaxy For Advanced Transistor Applications
Yihwan Kim
Ali Zojaji
Satheesh Kuppurao
OriginalPaper 04 August 2006 Article: 405
Layer Transfer of Hydrogen-Implanted Silicon Wafers by Thermal-Microwave Co-Activation
Y. Y. Yang
C. H. Huang
T.-H. Lee
OriginalPaper 17 August 2006 Article: 313
BCl₃/N₂ Plasma for Advanced non-Si Gate Patterning
Denis Shamiryan
Vasile Paraschiv
Werner Boullart
OriginalPaper 04 August 2006 Article: 312
Low Temperature Silicon Dioxide Deposition and Characterization
Hood Chatham
Martin Mogaard
Helmuth Treichel
OriginalPaper 17 August 2006 Article: 308
Effect of Spacer Scaling on PMOS Transistors
Wai Shing Lau
Chee Wee Eng
Soh Yun Siah
OriginalPaper 04 August 2006 Article: 304
Quantum Well Nanopillar Transistors
Shu-Fen Hu
Chin-Lung Sung
OriginalPaper 04 August 2006 Article: 303
Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET Scaling
Georges Guegan
Romain Gwoziecki
Simon Deleonibus
OriginalPaper 14 July 2006 Article: 302
Impact of Heavy Boron Doping and Nickel Germanosilicide Contacts on Biaxial Compressive Strain in Pseudomorphic Silicon-Germanium Alloys on Silicon
Saurabh Chopra
Mehmet C. Ozturk
Laurie McNeil
OriginalPaper 04 August 2006 Article: 210
Thermal Stability of Thin Virtual Substrates for High Performance Devices
Sarah H. Olsen
Steve J. Bull
Matty Caymax
OriginalPaper 04 August 2006 Article: 205
Process-Induced Strained P-MOSFET Featuring Nickel-Platinum Silicided Source/Drain
Rinus Tek Po Lee
Tsung-Yang Liow
Yee-Chia Yeo
OriginalPaper 04 August 2006 Article: 204
Mobility Enhancement by Strained Nitride Liners for 65nm CMOS Logic Design Features
Claude Ortolland
Pierre Morin
Peter Stolk
OriginalPaper 04 August 2006 Article: 202
A Novel High-Stress Pre-Metal Dielectric Film to Improve Device Performance for sub-65nm CMOS Manufacturing
Young Way Teh
John Sudijono
Harry Whitesell
OriginalPaper 04 August 2006 Article: 201
Structure and Process Parameter Optimization for Sub-10nm Gate Length Fully Depleted N-Type SOI MOSFETs by TCAD Modeling and Simulation
Yawei Jin
Lei Ma
Doug William Barlage
OriginalPaper 25 August 2006 Article: 110
Visualisation of Ge Condensation in SOI
Kristel Fobelets
Benjamin Vincent
David McPhail
OriginalPaper 17 August 2006 Article: 109
Schottky-barrier height tuning using dopant segregation in Schottky-barrier MOSFETs on fully-depleted SOI
Joachim Knoch
Min Zhang
Siegfried Mantl
OriginalPaper 25 August 2006 Article: 107
Schottky Source/Drain Transistor on Thin SiGe on Insulator Integrated with HfO2/TaN Gate Stack
Fei Gao
S. J. Lee
Dim-Lee Kwong
OriginalPaper 17 August 2006 Article: 104
Systematic Characterization of Pseudomorphic (110) Intrinsic SiGe Epitaxial Films for Hybrid Orientation Technology with Embedded SiGe Source/Drain
Christine Ouyang
Anita Madan
Chun-Yung Sung
OriginalPaper 18 August 2006 Article: 102
Amorphization/templated Recrystallization (ATR) Method for Hybrid Orientation Substrates
K. L. Saenger
J. P. de Souza
D. K. Sadana
OriginalPaper 25 August 2006 Article: 101
Introduction of Airgap Deeptrench Isolation in STI Module for High Speed SiGe : C BiCMOS Technology
Eddy Kunnen
Li Jen Choi
Stefaan Decoutere
OriginalPaper 04 August 2006 Article: 1

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