Analysis and Optimisation of New Implantation and Activation Mechanisms in Ultra Shallow Junction Implants Using Scanning Spreading Resistance Microscopy (SSRM) Pierre EybenSimone SeveriWilfried Vandervorst OriginalPaper 01 December 2006 Article: 508
Accurate Sheet Resistance Measurement on Ultra-Shallow Profiles Trudo ClarysseAlain MoussaDirch H. Petersen OriginalPaper 01 December 2006 Article: 507
Modeling and Experiments of Boron Diffusion During Sub-Millisecond Non-Melt Laser Annealing in Silicon Taiji NodaSusan FelchWilfried Vandervorst OriginalPaper 01 December 2006 Article: 506
Physical Modeling of Defects, Dopant Activation and Diffusion in Aggressively Scaled Bulk and SOI Devices: Atomistic and Continuum Approaches Victor MorozIgnacio Martin-Bragado OriginalPaper 01 December 2006 Article: 505
Electrical Characterization of Residual Implantation-Induced Defects in the Vicinity of Laser-Annealed Implanted Ultrashallow Junctions V. GondaS. LiuL. K. Nanver OriginalPaper 01 December 2006 Article: 502
Thermally Induced Deformation and Stresses During Millisecond Flash Lamp Annealing Mark P. SmithKeith A. SeffenWolgang Skorupa OriginalPaper 01 December 2006 Article: 408
Deactivation of Ultra Shallow B and BF2 Profiles After Non-Melt Laser Annealing James A. SharpNicholas E.B CowernKaren J. Kirkby OriginalPaper 01 December 2006 Article: 407
Issues and Optimization of Millisecond Anneal Process for 45 nm Node and Beyond Kanna AdachiKazuya OhuchiHidemi Ishiuchi OriginalPaper 01 December 2006 Article: 406
The Behavior of Ion Implanted Silicon During Ultra-High Temperature Annealing Amitabh Jain OriginalPaper 01 December 2006 Article: 404
Defect Evolution During Laser Annealing Susan B. FelchAbhilash MayurBritta E. Jones OriginalPaper 01 December 2006 Article: 403
Effect of Varying Dwell Time During Non-Melt Laser Annealing of Boron Implanted Silicon Daniel E. ZeenbergKevin S. JonesVijay Parihar OriginalPaper 01 December 2006 Article: 402
Impurity Solubility and Redistribution Due to Recrystallization of Preamorphized Silicon Ray DuffyVincent VeneziaKarel van der Tak OriginalPaper 01 December 2006 Article: 401
PN Junction Formation for High-Performance Insulated Gate Bipolar Transistors; Double-Pulsed Green Laser Annealing Technique Toshio Joshua KudoNaoki Wakabayashi OriginalPaper 01 December 2006 Article: 311
Ab-Initio Study of Boron Diffusion Retardation in Si1-xGex Yonghyun KimTaras A. KirichenkoGyeong S. Hwang OriginalPaper 01 December 2006 Article: 308
Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-Shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth K. R. C. MokB. ColombeauJ. J. Hamilton OriginalPaper 01 December 2006 Article: 304
Mechanisms for Interstitial-Mediated Transient Enhanced Diffusion of N-Type Dopants Scott Anthony HarrisonThomas F. EdgarGyeong S. Hwang OriginalPaper 01 December 2006 Article: 210
Integration of Solid Phase Epitaxial Re-Growth, Flash and Sub-Melt Laser Annealing for S/D Junctions in CMOS Digital Technology Simone SeveriEmmanuel AugendreKristin De Meyer OriginalPaper 01 December 2006 Article: 207
Interaction Between Low Temperatures Spacers and Source Drain Extensions and Pockets for Both NMOS and PMOS of the 65 nm Node Technology Nathalie CagnatCyrille LavironFrançois Wacquant OriginalPaper 01 December 2006 Article: 206
Ge out-diffusion and its Effect on Electrical Properties in s-Si/SiGe Devices Suresh UppalMehdi KanounAnthony O’Neill OriginalPaper 01 December 2006 Article: 204
Enhanced Antimony Activation for Ultra-Shallow Junctions in Strained Silicon N. S. BennettA. J. SmithB. J. Sealy OriginalPaper 01 December 2006 Article: 203
Room Temperature Boron Diffusion in Amorphous Silicon Jeannette M. JacquesKevin S. JonesEnrico Napolitani OriginalPaper 01 December 2006 Article: 201
Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator Justin J. HamiltonErik J. H. CollartKaren J. Kirkby OriginalPaper 01 December 2006 Article: 110
Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-Melt Laser Anneal Simone SeveriEmmanuel AugendreKristin De Meyer OriginalPaper 01 December 2006 Article: 107
The Carbon Co-implant with Spike RTA Solution for Phosphorus Extension Bartek J. PawlakRay DuffyNick Cowern OriginalPaper 01 December 2006 Article: 106
Germanium & Carbon Co-implantation for Enhanced Short Channel Effect Control in PMOS Devices Benjamin DumontArnaud PouydebasqueThomas Skotnicki OriginalPaper 01 December 2006 Article: 105
The Carbon Co-implant with Spike RTA Solution for Boron Extension Bartek J. PawlakEmmanuel AugendreNick Cowern OriginalPaper 01 December 2006 Article: 103
Ultra Shallow Junctions Optimization with Non Doping Species Co-implantation Nathalie CagnatCyrille LavironArnaud Pouydebasque OriginalPaper 01 December 2006 Article: 102
Millisecond Annealing: Past, Present and Future Paul TimansJeff GelpeySilke Paul OriginalPaper 01 December 2006 Article: 101
