Volume 911, Issue 1

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December 2005

Symposium B — Silicon Carbide 2006 — Materials, Processing and Devices

Issue Editors:

M. Dudley,
M. A. Capano,
T. Kimoto,
A. R. Powell,
S. Wang

66 articles in this issue

Alternative Magnesium Calcium Oxide Gate Dielectric for Silicon Carbide MOS Application
D O Stodilka
A. P. Gerger
F. Ren
OriginalPaper 01 February 2011 Article: 1403
Time-Dependent Bias Stress-Induced Instability of SiC MOS Devices
Aivars Lelis
Daniel Habersat
Neil Goldsman
OriginalPaper 01 February 2011 Article: 1305
950V, 8.7mohm-cm2 High Speed 4H-SiC Power DMOSFETs
Sei-Hyung Ryu
Charlotte Jonas
John Palmour
OriginalPaper 01 February 2011 Article: 1304
Vertical MOSFET Devices Fabricated on 3C-SiC with High and Low Material Quality
Adolf Schoner
Mietek Bakowski
Masayuki Abe
OriginalPaper 01 February 2011 Article: 1303
Development of A 4H-SiC CMOS Inverter
Brett Adam Hull
Sei-Hyung Ryu
James Scofield
OriginalPaper 01 February 2011 Article: 1302
Reliability of High Voltage 4H-SiC MOSFET Devices
Sumi Krishnaswami
Sei-Hyung Ryu
James Scofield
OriginalPaper 01 February 2011 Article: 1301
Thermal detection mechanism of SiC-Based Resistive Gas Sensors
Timothy J. Fawcett
Meralys Reyes
John T. Wolan
OriginalPaper 01 February 2011 Article: 1206
Effects of Different Defect Types on the Performance of Devices Fabricated on a 4H-SiC Homoepitaxial Layer
Hui Chen
Balaji Raghothamachar
B. J. Skromme
OriginalPaper 01 February 2011 Article: 1203
1.8 kV, 10 mOhm-cm² 4H-SiC JFETs
James D. Scofield
Sei-Hyung Ryu
Anant Agarwal
OriginalPaper 01 February 2011 Article: 1202
TiW/TiWN/Pt Ohmic Contacts ton-Type 3C-SiC
Kirk Hofeling
Loren Rieth
Florian Solzbacher
OriginalPaper 01 February 2011 Article: 1106
Simultaneous Formation of Ohmic Contacts for Both N- and P-Type 4H-Sic Using Nial-Based Contact Materials
Susumu Tsukimoto
Toshitake Onishi
Masanori Murakami
OriginalPaper 01 February 2011 Article: 1105
Degradation of Current Gain in SiC BJTs
Anant Agarwal
Sumi Krishnaswami
Charles Scozzie
OriginalPaper 01 February 2011 Article: 1104
Ti/AlNi/W Ohmic Contacts to P-Type SiC
Bang-Hung Tsao
Jacob Lawson
James Scofield
OriginalPaper 01 February 2011 Article: 1103
Impact of EBAS annealing on sheet resistance reduction for Al-implanted 4H-SiC(0001)
Masami Shibagaki
Akihiro Egami
Masataka Satoh
OriginalPaper 01 February 2011 Article: 1102
Ion Implanted p⁺/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing
Roberta Nipoti
Alberto Carnera
Mara Passini
OriginalPaper 01 February 2011 Article: 1101
Control of Trenching and Surface Roughness in Deep Reactive Ion Etched 4H and 6H SiC
Glenn M. Beheim
Laura J. Evans
OriginalPaper 01 February 2011 Article: 1015
High Power SiC MESFETs
Christopher Ian Harris
Andrei O. Konstantinov
Christer Hallin
OriginalPaper 01 February 2011 Article: 1014
Demonstration of Hybrid Silicon-on-Silicon Carbide Wafers and Electrical Test Structures with Improved Thermal Performance
Steven G. Whipple
John T. Torvik
Jeffrey T. Bernacki
OriginalPaper 01 February 2011 Article: 1013
Comparison of Parameter Extraction Techniques for SiC Schottky Diodes
Ming H. Weng
Alton B. Horsfall
Irina P. Nikitina
OriginalPaper 01 February 2011 Article: 1012
Pr-O-N Dielectrics for MIS Stacks on Silicon and Silicon Carbide Surfaces
Karsten Henkel
Mohamed Torche
Dieter Schmeißer
OriginalPaper 01 February 2011 Article: 1011
Laser Endotaxy and PIN Diode Fabrication of Silicon Carbide
Zhaoxu Tian
Nathaniel R. Quick
Aravinda Kar
OriginalPaper 01 February 2011 Article: 1007
Growth of Epitaxial γ-Al₂O₃ Dielectrics on 4H-SiC
Carey M. Tanner
Jun Lu
Jane P. Chang
OriginalPaper 01 February 2011 Article: 1006
Fabrication and Characterization of 5 kV IGBTs on 4H-SiC
Charlotte Jonas
Qingchun Zhang
John Palmour
OriginalPaper 01 February 2011 Article: 1005
Thermal Interactions of Ni on Stepped 6H-SiC Surfaces: Implications for Thin Film Microstructure
A. Woodworth
Srikanth Raghavan
Charter D. Stinespring
OriginalPaper 01 February 2011 Article: 1003
Effect of Dopant Concentration on High Voltage 4H-SiC Schottky Diodes
Francesco La Ia
Giuseppa Galvagno
Gaetano Foti
OriginalPaper 01 February 2011 Article: 1002
Laser-Patterned Blue-Green SiC LED
Sachin M. Bet
Nathaniel R. Quick
Aravinda Kar
OriginalPaper 01 February 2011 Article: 1001
Homoepitaxial growth on 4H-SiC Substrates by Chemical Vapor Deposition
Christer Hallin
Igor Khlebnikov
Cengiz Balkas
OriginalPaper 01 February 2011 Article: 905
Multiplication of Basal Plane Dislocations via Interaction with c-Axis Threading Dislocations in 4H-SiC
Yi Chen
Govindhan Dhanaraj
Stephen E. Saddow
OriginalPaper 01 February 2011 Article: 904
High Quality Uniform Thick Epitaxy of 4H-SiC for High Power Device Applications
Jie Zhang
Janice Mazzola
Jeff Casady
OriginalPaper 01 February 2011 Article: 903
Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices
Bernd Thomas
Christian Hecht
Peter Friedrichs
OriginalPaper 01 February 2011 Article: 902
Epitaxial Growth and Characterization of SiC on Different Orientations
Larry B. Rowland
Canhua Li
Jody A. Fronheiser
OriginalPaper 01 February 2011 Article: 901
Process Control During Liquid Phase Rerowth of 3C-SiC on Si Substrates
Mark Smith
Matthias Voelskow
Wolgang Skorupa
OriginalPaper 01 February 2011 Article: 804
Recent Results From Epitaxial Growth on Step Free 4H-SiC Mesas
Philip G. Neudeck
Andrew J. Trunek
Charles R. Eddy Jr.
OriginalPaper 01 February 2011 Article: 803
Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)
Camilla Coletti
Martin Hetzel
Stephen E. Saddow
OriginalPaper 01 February 2011 Article: 802
Development of a high-growth rate 3C-SiC on Si CVD process
M. Reyes
Y. Shishkin
S. E. Saddow
OriginalPaper 01 February 2011 Article: 801
Process-Induced Deformations and Stacking Faults in 4H-SiC
Robert S. Okojie
Xianrong Huang
Pirouz Pirouz
OriginalPaper 01 February 2011 Article: 702
Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations
Serguei Soubatch
Wai Y. Lee
Ulrich Starke
OriginalPaper 01 February 2011 Article: 701
A Study of V3+/4+ Levels in Semi-insulating 6H-SiC using Optical Admittance and Electron Paramagnetic Resonance Spectroscopies
Wonwoo Lee
Mary E. Zvanut
OriginalPaper 01 February 2011 Article: 605
Deep Levels in As-Grown and Electron-Irradiated P-type 4H-SiC
Katsunori Danno
Tsunenobu Kimoto
OriginalPaper 01 February 2011 Article: 604
Characterization of Semi-insulating SiC
Nguyen Tien Son
Patrick Carlsson
Erik Janzén
OriginalPaper 01 February 2011 Article: 603
Deep Levels and Compensation in High Purity Semi-Insulating 4H-SiC
W. C. Mitchel
W. D. Mitchell
E. R. Glaser
OriginalPaper 01 February 2011 Article: 602
Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 10¹⁶ n/cm²
Anna Cavallini
Antonio Castaldini
Vladimir Cindro
OriginalPaper 01 February 2011 Article: 601
Development of PECVD SiC for MEMS Using 3MS as the Precursor
Jiangang Du
Neha Singh
Christian A. Zorman
OriginalPaper 01 February 2011 Article: 528
Growth Mechanism and Dislocation Characterization of Silicon Carbide Epitaxial Films
Govindhan Dhanaraj
Yi Chen
Michael Dudley
OriginalPaper 01 February 2011 Article: 527
Crystal face and C/Si ratio Dependence of Phosphorus Doping by SiC Epitaxial Growth
Takeshi Tawara
Yuko Ueki
Masaharu Nishiura
OriginalPaper 01 February 2011 Article: 526
The Formation Mechanism of Carrot Defects in SiC Epifilms
Hui Chen
Guan Wang
Michael Dudley
OriginalPaper 01 February 2011 Article: 524
Dislocation-Related Etch Protrusions Formed on 4H-SiC (000-1) Surfaces by Molten KOH Etching
Masahide Gotoh
Takeshi Tawara
Masaharu Nishiura
OriginalPaper 01 February 2011 Article: 522
Characterization of SiC Materials and Devices by SIMS
Yupu Li
Yumin Gao
OriginalPaper 01 February 2011 Article: 520
Perchlorosilanes and Perchlorocarbosilanes as Precursors to Silicon Carbide
Vladimir Sevastyanov
Yurij Ezhov
Nikolaj Kuznetsov
OriginalPaper 01 February 2011 Article: 512
High-Resolution X-ray Topography of Dislocations in 4H-SiC Epilayers
Isaho Kamata
Hidekazu Tsuchida
Michael Dudley
OriginalPaper 01 February 2011 Article: 511

Volume 911, Issue 1

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