Volume 91, Issue 1

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December 1987

Symposium A — Heteroepitaxy on Silicon II

Issue Editors:

J.C.C. Fan,
J.M. Phillips,
B-Y. Tsaur

68 articles in this issue

The Nucleation and Growth of GaAs on Si
J. S. Harris Jr.
S. M. Koch
S. J. Rosner
OriginalPaper 01 December 1987 Pages: 3 - 14
Epitaxial GaAs on Si: Progress and Potential Applications
Don W. Shaw
OriginalPaper 01 December 1987 Pages: 15 - 30
Epitaxy Of GaAs on Si: MBE and OMCVD
Jhang W. Lee
Jack P. Salerno
John C. C. Fan
OriginalPaper 01 December 1987 Pages: 33 - 44
Steps on (001) Si Surfaces
D. E. Aspnes
J. Ihm
OriginalPaper 01 December 1987 Pages: 45 - 50
Control of GaAs Domain Formation Via Monolayer and Multilayer Steps on Misoriented Si(100)
P. R. Pukite
P. I. Cohen
OriginalPaper 01 December 1987 Pages: 51 - 56
Optical Reflectance and Rheed Transients During Mbe Growth on (001) GaAs
D. E. Aspnes
J. P. Harbison
L. T. Florez
OriginalPaper 01 December 1987 Pages: 57 - 62
Residual Stress in GaAs Layer Grown on 4°-Off (100)Si by MBE
T. Yao
Y. Okada
K. Ishida
OriginalPaper 01 December 1987 Pages: 63 - 68
Heteroepitaxy of GaAs on Si by MOCVD
Tetsuo Soga
Toru Imori
Masayoshi Umeno
OriginalPaper 01 December 1987 Pages: 69 - 72
Stresses in Multilayered Thin Films on a Thick Substrate
E. Suhir
OriginalPaper 01 December 1987 Pages: 73 - 80
Effect of Free Surfaces and Interfaces on Dopant Distribution Profiles
K. Jagannadham
J. Narayan
OriginalPaper 01 December 1987 Pages: 81 - 90
The Structure of GaAs/Si(211) Heteroepitaxial Layers
Zuzanna Liliental-Weber
E. R. Weber
H. Kroemer
OriginalPaper 01 December 1987 Pages: 91 - 98
Defect Reduction in GaAs Epilayers on Si Substrates Using Strained Layer Superlattices
N. El-Masry
N. Hamaguchi
J. Salerno
OriginalPaper 01 December 1987 Pages: 99 - 103
Origin of Defects in MOCVD Growth of GaP on Silicon
A. E. Blakeslee
M. M. Al-Jassim
S. E. Asher
OriginalPaper 01 December 1987 Pages: 105 - 111
MBE Growth of GaAs on Porous Silicon
T. L. Lin
L. Sadwick
M.-A. Nicolet
OriginalPaper 01 December 1987 Pages: 113 - 118
Epitaxial Growth of GaAs on 4-Inch Diameter Silicon Substrates by OMCVD.
Jack P. Salerno
J. W. Lee
R. P. Gale
OriginalPaper 01 December 1987 Pages: 119 - 124
Improved MOCVD Growth of GaAs on Si
R. M. Lum
J. K. Klingert
M. G. Lamont
OriginalPaper 01 December 1987 Pages: 125 - 130
The Two-Step Growth Mechanism of MOCVD GaAs/Si
Koichi Ishida
OriginalPaper 01 December 1987 Pages: 133 - 140
Materials Aspects of GaAs on Si
Russ Fischer
OriginalPaper 01 December 1987 Pages: 141 - 142
Grazing Incidence X-ray Scattering Study of Defect Structures in MBE GaAs/Si Using Synchrotron Radiation
S. S. Laderman
J. Kortright
A. Fischer-Colbrie
OriginalPaper 01 December 1987 Pages: 143 - 148
Raman Scattering Spectrum Along a Bevel Etched GaAs on Si, Tem Study and GaAs P-I-N Photodetector on Si
Y. H. Lo
M.-N. Charasse
S. Wang
OriginalPaper 01 December 1987 Pages: 149 - 154
Structural Characterization of Thin, Low Temperature Films of GaAs on Si Substrates
S. J. Rosner
S. M. Koch
J. S. Harris Jr.
OriginalPaper 01 December 1987 Pages: 155 - 160
Characterization of Dislocations in GaAs Grown on Si and Ge
N.-H. Cho
S. Mckernan
K. Wagner
OriginalPaper 01 December 1987 Pages: 161 - 166
MBE Growth of GaAs on Si (100)
J. S. Ahearn
P. Uppal
OriginalPaper 01 December 1987 Pages: 167 - 173
Characterization of GaAs and Ge Films on (100) Silicon
J.-M. Baribeau
D. C. Houghton
T. E. Jackman
OriginalPaper 01 December 1987 Pages: 175 - 180
Characterization of APBs in GaAs Grown on Si and Ge
C. B. Carter
N.-H. Cho
D. K. Wagner
OriginalPaper 01 December 1987 Pages: 181 - 186
MO-CVD GaAs Grown by Direct Deposition on Si
S. M. Vernon
S. J. Pearton
D. C. Jacobson
OriginalPaper 01 December 1987 Pages: 187 - 192
{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer
J. W. Lee
D. K. Bowen
J. P. Salerno
OriginalPaper 01 December 1987 Pages: 193 - 198
Prospects for GaAs-on-Si LSI Circuits
H. Shichijo
L. T. Tran
J. W. Lee
OriginalPaper 01 December 1987 Pages: 201 - 212
Prospects for Monolithic GaAs/Si Integration
H. K. Choi
G. W. Turner
B.-Y. Tsaur
OriginalPaper 01 December 1987 Pages: 213 - 224
Deep Electron Traps In Mbe Gaas On Si
K. Nauka
G. A. Reid
J. S. Harris
OriginalPaper 01 December 1987 Pages: 225 - 231
Electrical Characterization of Defects in GaAs Grown on Si by MBE
N. Chand
R. Fischer
A. Y. Cho
OriginalPaper 01 December 1987 Pages: 233 - 240
Comparative Studies of the Structural, Electrical and Opto-Electronic Properties of Epitaxial GaAs Layers Grown On Either Si, Ge Or Ge Coated Si Substrates By Mocvd
M. Abdul Awai
El Hang Lee
R. L. Opila
OriginalPaper 01 December 1987 Pages: 241 - 248
Photoluminescence Study of GaAs/AlGaAs Quantum Wells Grown On Si Substrates
C. Jagannath
S. Zemon
S. K. Shastry
OriginalPaper 01 December 1987 Pages: 249 - 253
Low-Temperature Photoluminescence of Mocvd GaAs Grown Directly on Si
B. A. Wilson
Carl E. Bonner
J. K. Klingert
OriginalPaper 01 December 1987 Pages: 255 - 260
Optical Characterization Of GaAs/Si: Spectral Features in the Excitonic Region
S. Zemon
S. K. Shastry
G. Lambert
OriginalPaper 01 December 1987 Pages: 261 - 265
Ge_xSi_1−x/Si Heterostructures: Physics and Device Applications
John C. Bean
OriginalPaper 01 December 1987 Pages: 269 - 276
Theoretical Analysis of a Si/SiGe Hemt Structure
C. Smith
M. E. Jones
OriginalPaper 01 December 1987 Pages: 277 - 285
Optical Properties of Ordered Ge-Si Atomic-Layer Superlattices
T. P. Pearsall
J. Bevk
J. P. Mannaerts
OriginalPaper 01 December 1987 Pages: 287 - 292
New Ordering-Induced Optical Transitions in Strained Sige Superlattices
Sverre Froyen
D. M. Wood
Alex Zunger
OriginalPaper 01 December 1987 Pages: 293 - 298
Optoelectronic Properties of Pseudomorphic Si_xGel_1−x,/Ge Heterostructures on (001) Ge
R. People
OriginalPaper 01 December 1987 Pages: 299 - 304
Strain Measurements in Si/Si_0.5Ge_0.5 Superlattices by He Ion Channeling
S. Mantl
E. Kasper
H. J. Jorke
OriginalPaper 01 December 1987 Pages: 305 - 310
Stress Distribution and Critical Thicknesses of Thin Epitaxial Films
S. Sharan
K. Jagannadham
J. Narayan
OriginalPaper 01 December 1987 Pages: 311 - 321
Epitaxial Ge Films on Si Substrates
J. S. Mccalmont
D. Robinson
H. R. Shanks
OriginalPaper 01 December 1987 Pages: 323 - 328
Atomic-Scale Simulation of Silicon Atomic Beam Deposition
Brian W. Dodson
OriginalPaper 01 December 1987 Pages: 329 - 334
Heteroepitaxial Si-, Ge-, and Gaas-On-Insulator Structures on Si Substrates by Use of Fluoride Insulators
T. Asano
H. Ishiwara
S. Furukawa
OriginalPaper 01 December 1987 Pages: 337 - 348
Fabrication of Si-Gate CMOS Devices In A Heteroepitaxial Si/Caf₂/Si Structure
Hiroshi Onoda
Masayoshi Sasaki
Norio Hirashita
OriginalPaper 01 December 1987 Pages: 349 - 358
Lattice-Matched Gaas/Ca_0.45Sr_0.55F₂/Ge(100) Heterostrucuures Grown By Molecular Beam Epitaxy
C. W. Tu
J. C. Beggy
A. S. Jordan
OriginalPaper 01 December 1987 Pages: 359 - 364
The Effect of Rapid Thermal Annealing on Heteroepitaxial Structures
Julia M. Phillips
J. L. Batstone
L. Pfeiffer
OriginalPaper 01 December 1987 Pages: 365 - 370
Temperature Dependence Of The Electrical Properties Of Epitaxial Caf₂ Layers On Si(111) Summary Abstract
R. W. Fathauer
L. J. Schowalter
OriginalPaper 01 December 1987 Pages: 371 - 373
Properties Of Epitaxial Cdte On Si(lll) With a (Ca,Ba)F₂ Buffer Layer
H. Zogg
S. Blunier
OriginalPaper 01 December 1987 Pages: 375 - 380

Volume 91, Issue 1

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