Plasma-Assisted Epitaxial Growth of Compound Semiconductors for Infrared Application K. MatsushitaT. HariuQ. Z. Gao OriginalPaper 01 December 1986 Article: 479
CdTe Films Grown on InSb Substrates by Organometallic Epitaxy I. B. BhatN. R. TaskarS. K. Ghandhi OriginalPaper 01 December 1986 Article: 471
Dual Ion Beam Sputter Deposition of Cdte, Hgte and Hgcdte Films S. V. KrishnaswamyJ. H. RiegerM. H. Francombe OriginalPaper 01 December 1986 Article: 463
Molecular Beam Epitaxial Growth of Cdl-xznxTe Matched to HgCdTe Alloys N. MagneaF. Dal’boG. Feuillet OriginalPaper 01 December 1986 Article: 455
InAsSbBi and InSbBi: Potential Material Systems for Infrared Detection S. M. BedairT. P. HumphreysT. Katsuyama OriginalPaper 01 December 1986 Article: 447
Metallurgical Profile Modeling of Hg Corner LPE HgCdTe Burt W. Ludington OriginalPaper 01 December 1986 Article: 437
InSb: A Key Material for IR Detector Applications S. R. JostV. F. MeiklehamT. H. Myers OriginalPaper 01 December 1986 Article: 429
MBE Growth of Mercury Cadmium Telluride: Issues and Practical Solutions J. W. Cook Jr.K. A. HarrisJ. F. Schetzina OriginalPaper 01 December 1986 Article: 419
HgTe-CdTe Superlattices Grown by Photo-MOCVD William L. AhlgrenJ. B. JamesJ.-L. Staudenmann OriginalPaper 01 December 1986 Article: 405
Hg1−x−yCdxZnyTe: Growth, Properties and Potential for Infrared Detector Applications Debra L. KaiserPiotr Becla OriginalPaper 01 December 1986 Article: 397
Orientation Effects on the Heteroepitaxial Growth of CdxHg1−xTe on to CdTe and GaAs J. GiessJ. S. GoughG. W. Blackmore OriginalPaper 01 December 1986 Article: 389
A Qualitative Model for Predicting Alkyl Stability and its Relevance to Organometallic Growth of HgCdTe and GaAlAs William E. Hoke OriginalPaper 01 December 1986 Article: 379
Interdiffused Multilayer Processing (IMP) in Alloy Growth J. B. MullinJ. GiessA. Royle OriginalPaper 01 December 1986 Article: 367
Liquid Phase Epitaxy of Hg1−xCdxTe from Te Solutions: A Route to IR Detector Structures E. R. Gertner OriginalPaper 01 December 1986 Article: 357
Liquid-Phase Epitaxy of Hg1−xCdxTe from Hg Solution: A Route to Infrared Detector Structures Tse TungM. H. KalisherP. E. Herning OriginalPaper 01 December 1986 Article: 321
A Study of the MBE HgTe Growth Process Roland J. KoestnerH. F. Schaake OriginalPaper 01 December 1986 Article: 311
Surface Recombination Measurements in HgCdTe by Optical Modulation Frequency Response J. A. MroczkowskiE. LesondakD. Resler OriginalPaper 01 December 1986 Article: 303
Characterization of HgCdTe Epilayers and HgTe-CdTe Superlattice Structures Grown by Molecular Beam Epitaxy T. H. MyersR. W. YankaJ. F. Schetzina OriginalPaper 01 December 1986 Article: 295
On the Auger Recombination Process in P-Type Lpe HgCdTe J. S. ChenJ. BajajG. Bostrup OriginalPaper 01 December 1986 Article: 287
Effects of Boron Implantation on Silicon Dioxide Passivated HgCdTe R. C. Bowman JrJ. MarksG. A. To OriginalPaper 01 December 1986 Article: 279
Low Temperature Photoluminescence Study of Doped CdTe and CdMnte Films Grown by Photoassisted Molecular Beam Epitaxy N. C. GilesR. N. BicknellJ. F. Schetzina OriginalPaper 01 December 1986 Article: 271
Characterization of Ultra High Purity Silicon Epitaxy Using Photoluminscence Spectroscopy J. E. HuffmanM. L. W. ThewaltA. G. Steele OriginalPaper 01 December 1986 Article: 263
Infrared Reflectance Characterization of a GaAs-AlAs Superlattice J. M. ZavadaG. K. HublerW. D. Laidig OriginalPaper 01 December 1986 Article: 257
Identification and Sources of Impurities in InGaAs Grown by Liquid Phase Epitaxy D. G. KnightC. J. MinerA. Majeed OriginalPaper 01 December 1986 Article: 249
Hgl−xCdxTe Near Surface Characterization using Computer Aided Rutherford Backscattering Spectrometry T.-M. KaoT. W. Sigmon OriginalPaper 01 December 1986 Article: 233
Dynamical X-ray Rocking curve Simulations of InGaAsP/InP Double Heterostruciures using Abeles’ Matrix Method A. T. MacranderB. M. GlasgowW. D. Johnston Jr OriginalPaper 01 December 1986 Article: 225
Study of HgTe-cdTe Multilayer Structures by Transmission Electron Microscopy N. OtsukaY. E. IhmJ. F. Schetzina OriginalPaper 01 December 1986 Article: 217
Subsurface Micro-Lattice Strain Mapping T. S. AnanthanarayananR. G. RosemeierP. Becla OriginalPaper 01 December 1986 Article: 209
Atomic Structure of HgTe and CdTe Epitaxial Layers Grown by MBE on GaAs Substrates F. A. PonceG. B. AndersonJ. M. Ballingall OriginalPaper 01 December 1986 Article: 199
Characterization of Infrared Materials by X-Ray Diffraction Techniques W. J. TakeiN. J. Doyle OriginalPaper 01 December 1986 Article: 189
Laser Annealing of Narrow Gap HgTe-Based Alloys R. E. KremerF. G. MooreY. Tang OriginalPaper 01 December 1986 Article: 179
Tailored Microstructures for Infrared Detection Quark Y. ChenC. W. Bates Jr. OriginalPaper 01 December 1986 Article: 171
Controtle Substitutional Doping of Cdte Thin Films and Cd 1-xMn xTe-CdTe Superlattices R. N. BicknellN. C. GilesJ. F. Schetzina OriginalPaper 01 December 1986 Article: 163
Photochemical Processes in Photo-Assisted Epitaxy of CdxHg 1-xTe S. J. C. IrvineJ. B. MullinH. Hill OriginalPaper 01 December 1986 Article: 153
Variation in the Properties of Superlattices with Band Offsets T. C. McGillR. H. MilesT. J. Watson Sr OriginalPaper 01 December 1986 Article: 143
Structural Studies of Hydrogenated Amorphous Carbon Infrared Coatings C. J. RobinsonM. G. SamantJ. J. Cuomo OriginalPaper 01 December 1986 Article: 133
HgCdTe Versus Hgznte: Electronic Properties and Vacancy Formation Energies M. A. BerdingA.-B. ChenA. Sher OriginalPaper 01 December 1986 Article: 127
Growth and Characterization of Ti3PSe4 Single Crystals N. B. SinghR. H. HopkinsM. Gottlieb OriginalPaper 01 December 1986 Article: 119
High Quality CdTe Growth by Gradient Freeze Method A. TanakaY. MasaT. Kawasaki OriginalPaper 01 December 1986 Article: 111
Growth and Characterization of High Quality, Low Defect, Subgrain Free Cadmium Telluride by a Modified Horizontal Bridgman Technique W. P. AllredA. A. KhanJ. F. Schetzina OriginalPaper 01 December 1986 Article: 103
Structure-Property Relationships in Semiconductor Alloys A. SherM. A. BerdingW. Chen OriginalPaper 01 December 1986 Article: 91
Bulk Crystal Growth of Hg1−xCdxTe for Avalanche Photodiode Applications T. Nguyen DuyA. DurandJ. L. Lyot OriginalPaper 01 December 1986 Article: 81
Issues in the Growth of Bulk Crystals of Infrared Materials K. J. BachmannH. Goslowsky OriginalPaper 01 December 1986 Article: 69
Preparation and Applications of Lead Chalcogenide Diode Lasers Dale L. Partin OriginalPaper 01 December 1986 Article: 47
Modeling of HgCdTe Heterojunction Devices Ken ZanioKen Hay OriginalPaper 01 December 1986 Article: 39
Materials Requirements for IR Detectors and Imagers M. A. Kinch OriginalPaper 01 December 1986 Article: 15
Defects in Mg-Doped InP and GaInAs Grown by Omvpe Fred R. BacherH. CholanWallace B. Leigh OriginalPaper 01 December 1986 Article: 5