Near-field photoluminescence spectroscopy of InGaN quantum dots. A. M. MintairovJ. L. MerzN. N. Ledentsov OriginalPaper 12 December 2005 Article: 3206
Surface Morphology and Island Shape of MOVPE Grown InGaN Nano-Island Ensembles Studied by STM Subhashis GangopadhyayThomas SchmidtJens Falta OriginalPaper 12 December 2005 Article: 3205
Quantum Well Network Structures: Investigating Long-range Thickness Fluctuations in Single InGaN/GaN Quantum Wells Nicole K. van der LaakRachel A. OliverColin J. Humphreys OriginalPaper 12 December 2005 Article: 3203
Luminescence Efficiency of InGaN/GaN Quantum Wells on Bulk GaN Substrate M. DworzakT. StempelI. Grzegory OriginalPaper 12 December 2005 Article: 3202
Quantum-Confined Stark Effect and Polarization Field in Single Quantum Well InGaN/GaN LEDs R. J. KaplarS. R. KurtzD. D. Koleske OriginalPaper 12 December 2005 Article: 3201
Microphotoluminescence Studies on Single GaN Nanocolumns K. SebaldJ. GutowskiH. Lüth OriginalPaper 12 December 2005 Article: 3104
High Degree of Crystalline Perfection in Spontaneously Grown GaN Nanowires K. A. BertnessJ. B. SchlagerL. H. Robins OriginalPaper 12 December 2005 Article: 3103
MOCVD Growth and Characterization of AlGaInN Nanowires and Nanostructures J. HanK. KimC. Broadbridge OriginalPaper 12 December 2005 Article: 3101
Structural characterization of GaN single crystal layers grown by vapor transport from a gallium oxide (Ga2O3) powder source Balaji RaghothamacharPhanikumar KonkapakaMichael Spencer OriginalPaper 12 December 2005 Article: 3007
Crystal Growth and Defect Characterization of AlN Single Crystals Shaoping WangBalaji RaghothamacharAndrew G. Timmerman OriginalPaper 12 December 2005 Article: 3006
Atomic Force Microscope Studies on Native AlN Substrates Sandra SchujmanWayne LiuLeo J. Scholwalter OriginalPaper 12 December 2005 Article: 3005
Defect Content Evaluation in Single-Crystal AlN Wafers Robert T. BondokovKenneth E. MorganLeo J. Schowalter OriginalPaper 12 December 2005 Article: 3003
Rapid growth of bulk GaN crystal using GaN powder as source material Huaqiang WuJoseph SpinelliMichael G. Spencer OriginalPaper 12 December 2005 Article: 3001
Temperature and Dislocation Density Effects on the Thermal Conductivity of Bulk Gallium Nitride Christian MionJohn F. MuthDrew Hanser OriginalPaper 12 December 2005 Article: 2905
Thick AlN layers grown by HVPE on sapphire substrates V. SukhoveevA. UsikovM. Wraback OriginalPaper 12 December 2005 Article: 2903
What makes good templates for HVPE GaN growth? Corina E. C. DamAndrzej P. GrzegorczykPoul K. Larsen OriginalPaper 12 December 2005 Article: 2901
Compensation in Be-doped Gallium Nitride Grown Using Molecular Beam Epitaxy K. LeeB. VanMilK. Saarinen OriginalPaper 12 December 2005 Article: 2813
Microstructure and Strain-Free Lattice Parameters of SCxGa1-xN Films Michelle A. MoramTimothy B. JoyceColin J. Humphreys OriginalPaper 12 December 2005 Article: 2807
Growth of c-GaN films on the nitridated β-Ga2O3 substrates using RF-MBE Tsutomu ArakiChiharu MoriokaToetsu Shishido OriginalPaper 12 December 2005 Article: 2806
Epitaxial c-GaAs/h-GaN Heterostructures V. V. ChaldyshevYu. G. MusikhinT. Holden OriginalPaper 12 December 2005 Article: 2804
Growth of Nonpolar AlN and AlGaN on 4H-SiC (1-100) by Molecular Beam Epitaxy Rob ArmitageMasahiro HoritaTsunenobu Kimoto OriginalPaper 12 December 2005 Article: 2803
A TEM Investigation of Crack Reduction in AlGaN/GaN Heterostructures Using an AlN Interlayer Peter D. ChernsClifford McAleeseColin J. Humphreys OriginalPaper 12 December 2005 Article: 2712
Effects of GaN template annealing on the optical and morphological quality of the homoepitaxially overgrown GaN layer James R. GranduskyVibhu JindalFatemeh Shahedipour-Sandvik OriginalPaper 12 December 2005 Article: 2707
Polarity Control of LP-MOVPE GaN using N2 the Carrier Gas Seiji MitaRamon CollazoZlatko Sitar OriginalPaper 12 December 2005 Article: 2706
Characterization of Nitride Thin Films by Electron Backscatter Diffraction and Electron Channeling Contrast Imaging C. Trager-CowanF. SweeneyI. M. Watson OriginalPaper 12 December 2005 Article: 2611
What does an \(\left( {\vec a + \vec c} \right)\) dislocation core look like in wurtzite GaN ? I. BelabbasG. NouetPh. Komninou OriginalPaper 12 December 2005 Article: 2610
Study of ELOG GaN for Application in the Fabrication of Micro-channels for Optoelectronic Devices L.E RodakN.J Berry AnnD. Korakakis OriginalPaper 12 December 2005 Article: 2608
Characterization of lattice mosaic of a-plane GaN grown on r-plane sapphire by metalorganic vapor-phase epitaxy K. KusakabeS. AndoK. Ohkawa OriginalPaper 12 December 2005 Article: 2605
Stress Evolution during the Early Stages of AlN Vapor Growth B. WuJ. BaiM. Asif Khan OriginalPaper 12 December 2005 Article: 2601
Comparative investigation of quantum-dot-like localization centers in InGaN quantum well and quantum dot structures K. SebaldH. LohmeyerD. Hommel OriginalPaper 12 December 2005 Article: 2502
Misfit dislocations in green-emitting InGaN/GaN quantum well structures PMFJ CostaR. DattaCJ Humphreys OriginalPaper 12 December 2005 Article: 2501
SiH4 exposure of GaN surfaces: A useful tool for highlighting dislocations Rachel A. OliverMenno J. KappersColin J. Humphreys OriginalPaper 12 December 2005 Article: 2406
A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN E. NogalesK. LorenzO. Briot OriginalPaper 12 December 2005 Article: 2403
Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy M. AhoujjaM HogsedR. L. Hengehold OriginalPaper 12 December 2005 Article: 2401
Influence of the Annealing Ambient on Structural and Optical Properties of Rare Earth Implanted GaN K. LorenzE. NogalesK.P. O`Donnell OriginalPaper 12 December 2005 Article: 2315
Correlation between resistivity and yellow luminescence intensity of GaN layers grown by MOCVD A. HinokiY. HiroyamaY. Nanishi OriginalPaper 12 December 2005 Article: 2314
Characterization of the blue emission of Tm/Er co-implanted GaN I.S. RoqanC. Trager-CowanO. Briot OriginalPaper 12 December 2005 Article: 2313
Photoluminescence in wurtzite GaN containing carbon M. A. ReshchikovR.H. PatilloK.C. Travis OriginalPaper 12 December 2005 Article: 2312
High quantum efficiency of photoluminescence in GaN and ZnO M.A. ReshchikovX. GuH. Morkoç OriginalPaper 12 December 2005 Article: 2311
Refractive Indices of A-plane GaN Thin Films on R-plane Sapphire A.L. CaiI.P. WelleniusJ. W. Dong OriginalPaper 12 December 2005 Article: 2310
Effects of GaN passivation with SiO2 and SiNx studied by photoluminescence and surface potential electric force microscopy S. ChevtchenkoM.A. ReshchikovH. Morkoç OriginalPaper 12 December 2005 Article: 2309
Cu Induced Optical Transitions in MOCVD Grown Cu Doped GaN Jayantha SenawiratneMartin StrassburgNikolaus Dietz OriginalPaper 12 December 2005 Article: 2308
Surface Recombination and Vacuum/GaN/AlGaN Surface Quantum Wells Xiyao ZhangI.P. WelleniusKevin Linthicum OriginalPaper 12 December 2005 Article: 2306
Structural and optical properties of MOCVD InAlN epilayers S. HernándezK. WangRENiBEl Network OriginalPaper 12 December 2005 Article: 2304
Polarized Photoluminescence Study on AlGaN of AlGaN/GaN Heterostructure S. KitagawaK. kosakaY. Nanishi OriginalPaper 12 December 2005 Article: 2303
Oxygen Segregation to Nanopipes in Gallium Nitride M. HawkridgeD. Cherns OriginalPaper 12 December 2005 Article: 2205
Dislocation Reduction and Structural Properties of GaN layers Grown on N+-implanted AlN/Si (111) Substrates M. JamilJ. R. GranduskyF. Shahedipour-Sandvik OriginalPaper 12 December 2005 Article: 2203
Intersecting Basal Plane and Prismatic Stacking Fault Structures in GaN/AlN epilayers on on-axis and off-cut 6H-SiC substrates J. BaiX. HuangM. Dudley OriginalPaper 12 December 2005 Article: 2202
Structural analysis of ELO-GaN grown on sapphire using the x-ray micro-beam of an 8-GeV storage ring Takao MiyajimaShingo TakedaHironobu Narui OriginalPaper 12 December 2005 Article: 2201
High quality GaN layers grown on slightly miscut sapphire wafers P. BrüecknerM. FenebergF. Scholz OriginalPaper 12 December 2005 Article: 2104
