Volume 867, Issue 1

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December 2004

Symposium W — Chemical-Mechanical Planarization-Integration, Technology and Reliability

Issue Editors:

E. C. Johns,
A. Kumar,
J. A. Lee,
Y. S. Obeng,
I. Vos

42 articles in this issue

Modeling Pattern Effects in Oxide CMP
R. Rzehak
OriginalPaper 01 November 2005 Article: 510
Role of Molecular Structure of Complexing/Chelating Agents in Copper CMP Slurries
Udaya B. Patri
S. Pandija
S. V. Babu
OriginalPaper 01 November 2005 Article: 111
Novel Use of Surfactants in Copper Chemical Mechanical Polishing (CMP)
Youngki Hong
Udaya B. Patri
S. V. Babu
OriginalPaper 01 November 2005 Article: 110
Advanced ELID Process Development for Grinding Silicon Wafers
M. M. Islam
A. Senthil Kumar
M. Rahman
OriginalPaper 01 November 2005 Article: 92
High Planarization Efficiency and Wide Process Window Using Electro-chemical Mechanical Planarization (Ecmp_TM)
Feng Q Liu
Liang Chen
Wei-Yung Hsu
OriginalPaper 01 November 2005 Article: 91
Colloidal Silica based High Selectivity Shallow Trench Isolation (STI) Chemical Mechanical Polishing (CMP) Slurry
Kyoung-Ho Bu
Brij M. Moudgil
OriginalPaper 01 November 2005 Article: 85
In-situ Metrology for End Point Detection during Chemical Mechanical Polishing of Shallow Trench Isolation Structure
Parshuram B. Zantye
S. Mudhivarthi
David Evans
OriginalPaper 01 November 2005 Article: 84
Characterization of the Chemical Effects of Ceria Slurries for Chemical Mechanical Polishing
J. T. Abiade
S. Yeruva
R. K. Singh
OriginalPaper 01 November 2005 Article: 83
Investigating the Effects of Diluting Solutions and Trace Metal Contamination on Aggregation Characteristics of Silica-Based ILD CMP Slurries
D. DeNardis
H. Choi
A. Oehler
OriginalPaper 01 November 2005 Article: 79
The Adsorption Behaviors of Citric Acid on Abrasive Particles in Cu CMP Slurry
Young-Jae Kang
Yi-Koan Hong
Jin-Goo Park
OriginalPaper 01 November 2005 Article: 75
Strong Synergistic Effects between Ceria and Montmorillonite particles in Glass CMP Slurries
Mingming Fang
Michael Ianiro
Jason St. Onge
OriginalPaper 01 November 2005 Article: 74
In-Situ Chronoamperometry for CMP Slurry Investigations
Jian Zhang
Steven Grumbine
Thomas Werts
OriginalPaper 01 November 2005 Article: 73
Polishing Slurries with Aluminate-modified Colloidal Silica Abrasive
Irina Belov
Joo-Yun Kim
Keith Pierce
OriginalPaper 01 November 2005 Article: 69
Pattern Symmetry and CMP Process Simulation
Takafumi Yoshida
OriginalPaper 01 November 2005 Article: 67
Effect of Slurry Temperature on Cu Chemical Mechanical Polishing with Different Oxidizing Agents
Subrahmanya Mudhivarthi
Ashok Kumar
OriginalPaper 01 November 2005 Article: 66
Study on the planarization behaviour of copper CMP utilizing a dense pattern and a global step
Tilo Bormann
Johann W. Bartha
OriginalPaper 01 November 2005 Article: 63
Frictional behavior and particle adhesion of abrasive particles during Cu CMP
Yi-Koan Hong
Ja-Hyung Han
Jin-Goo Park
OriginalPaper 01 November 2005 Article: 62
Modeling of Polishing Regimes in Chemical Mechanical Polishing
Suresh B. Yeruva
Chang-Won Park
Brij M. Moudgil
OriginalPaper 01 November 2005 Article: 59
Synergy between Chemical Dissolution and Mechanical Abrasion during Chemical Mechanical Polishing of Copper
Wei Che
Ashraf Bastawros
Abhijit Chandra
OriginalPaper 01 November 2005 Article: 58
On the Relationship of CMP Wafer Nanotopography to Groove-Scale Slurry Transport
Gregory P. Muldowney
OriginalPaper 01 November 2005 Article: 57
A Dishing Model for STI CMP Process
Shih-Hsiang Chang
OriginalPaper 01 November 2005 Article: 55
Quantitative In-Situ Measurement of Asperity Compression Under the Wafer During Polishing
Caprice Gray
Daniel Apone
Ara Philipossian
OriginalPaper 01 November 2005 Article: 54
A Predictive Model for Controlling Wafer Level Polish Rate Uniformity in Oxide CMP
Tushar P. Merchant
Leonard J. Borucki
John N. Zabasajja
OriginalPaper 01 November 2005 Article: 53
Yield Improvement via minimization of step height non-uniformity in Chemical Mechanical Planarization (CMP)
Muthukkumar Kadavasal
Sutee Eamkajornsiri
Ashraf F. Bastawros
OriginalPaper 01 November 2005 Article: 52
CMP at the Wafer Edge – Modeling the Interaction between Wafer Edge Geometry and Polish Performance
Xiaolin Xie
Duane Boning
OriginalPaper 01 November 2005 Article: 51
CMP Compatibility of Partially Cured Benzocyclobutene (BCB) for a Via-First 3D IC Process
J. J. McMahon
F. Niklaus
R. J. Gutmann
OriginalPaper 01 November 2005 Article: 44
Correlation of Defects on Dielectric Surfaces with Large Particle Counts in Chemical-Mechanical Planarization (CMP) Slurries Using a New Single Particle Optical Sensing (SPOS) Technique
Edward E. Remsen
Sriram P. Anjur
Shoutian Li
OriginalPaper 01 November 2005 Article: 42
The effect of pad conditioning on planarization characteristics of chemical mechanical polishing (CMP) with ceria slurry
Yuichi Yamamoto
Takaaki Kozuki
Naoki Toge
OriginalPaper 01 November 2005 Article: 35
Integration of CMP Fixed Abrasive Polishing into the Manufacturing of Thick Film SOI Substrates
Martin Kulawski
Hannu Luoto
Jari Mäkinen
OriginalPaper 01 November 2005 Article: 34
Optimization of Psiloquest’s Application Specific CMP Pads for Commercialization
Parshuram B. Zantye
Yaw Obeng
Ashok Kumar
OriginalPaper 01 November 2005 Article: 33
A Universal CMP Process Description Language for Standardization
Takafumi Yoshida
OriginalPaper 01 November 2005 Article: 29
Effect of Particle Size Distribution on Filter Lifetime in Three Slurry Pump Systems
Mark R. Litchy
Reto Schoeb
OriginalPaper 01 November 2005 Article: 28
Stress Characterization of Post-CMP Copper Films Planarized Using Novel Low-Shear and Surface-Engineered Pads
Manish Deopura
Edward Hwang
Pradip K. Roy
OriginalPaper 01 November 2005 Article: 27
Abrasive Contribution to CMP Friction
David R. Evans
Michael R. Oliver
OriginalPaper 01 November 2005 Article: 26
AFM Measurements of Adhesion between Actual CMP Slurry Particles and Various Substrates
Yong Liu
Bogdan Zdyrko
Igor Luzinov
OriginalPaper 01 November 2005 Article: 25
Feasibility of Detecting Barrier Layer to Low-k Transition in Copper Cmp Using Raman Spectroscopy
S. Kondoju
C. Juncker
A. Oehler
OriginalPaper 01 November 2005 Article: 24
Instantaneous Fluid Film Imaging in Chemical Mechanical Planarization
Daniel Apone
Caprice Gray
Ara Philipossian
OriginalPaper 01 November 2005 Article: 23
The Adhesion of Pad Particles on Wafer Surfaces during Cu CMP
Jae-Hoon Song
Ja-Hyung Han
Young-Man Won
OriginalPaper 01 November 2005 Article: 19
Investigation on Abrasive Free Copper Chemical Mechanical Planarization for Cu/low k and Cu/ultra low k interconnects
S. Balakumar
T. Haque
M. Rahman
OriginalPaper 01 November 2005 Article: 17
Potential-pH Diagrams of Interest to Chemical Mechanical Planarization of Copper Thin Films
Serdar Aksu
OriginalPaper 01 November 2005 Article: 16
Effect of Temperature on Defect Generation during Copper Chemical Mechanical Planarization
Subrahmanya Mudhivarthi
Parshuram Zantyea
Jeung-Yeop Shim
OriginalPaper 01 November 2005 Article: 15
Effect of Corrosion Inhibitor (BTA) in Citric Acid based Slurry on Cu CMP
In-Kwon Kim
Young-Jae Kang
Jin-Goo Park
OriginalPaper 01 November 2005 Article: 13

Volume 867, Issue 1

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