Volume 866, Issue 1

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December 2004

Symposium V — Rare-Earth Doping for Optoelectronic Applications

Issue Editors:

T. Gregorkiewicz,
Y. Fujiwara,
M. Lipson,
J.M. Zavada

28 articles in this issue

Excitation-Wavelength Dependent and Time-Resolved Photoluminescence Studies of Europium Doped GaN Grown by Interrupted Growth Epitaxy (IGE)
Ei Ei Nyein
Uwe Hommerich
John M. Zavada
OriginalPaper 01 November 2005 Pages: 1 - 6
On 2.7 μm Emission from Er-doped Large Bandgap Hosts
H. Vrielinck
I. Izeddin
N. M. Khaidukov
OriginalPaper 01 November 2005 Pages: 7 - 12
Hafnium-related photoluminescence in single crystal silicon
R. Sachdeva
A. A. Istratov
E.R. Weber
OriginalPaper 01 November 2005 Pages: 13 - 18
Erbium in Semiconductors: Where are we coming from; Where are we going?
A. R. Peaker
OriginalPaper 01 November 2005 Pages: 19 - 28
Erbium Doped Silicon Single- and Multilayer Structures for LED and Laser Applications
Zakhary F. Krasilnik
Boris A. Andreev
Denis M. Zhigunov
OriginalPaper 01 November 2005 Pages: 29 - 40
Multistep resonant excitation of Erbium Ions in Thin Silicon Oxide Layers
Z. Fleischman
Chr. Sandmann
L. Dal Negro
OriginalPaper 01 November 2005 Pages: 41 - 46
High-Rate Deposition Of Rare-Earth Doped Silicate Nanoparticles For Porous & Dense Optical Films
Craig R. Horne
Pierre de Mascarel
William McGovern
OriginalPaper 01 November 2005 Pages: 47 - 52
GaN:Eu Interrupted Growth Epitaxy (IGE): Thin Film Growth and Electroluminescent Devices
Chanaka Munasinghe
Andrew Steckl
John Zavada
OriginalPaper 01 November 2005 Pages: 53 - 64
High Resolution Site-Selective Studies of Erbium-Centers in GaN and GaN:Mg
V. Glukhanyuk
H. Przybylińska
W. Jantsch
OriginalPaper 01 November 2005 Pages: 65 - 70
Luminescence and lifetime properties of europium doped gallium nitride compatible with CMOS technology
Carl B. Poitras
Michal Lipson
Michael G. Spencer
OriginalPaper 01 November 2005 Pages: 71 - 75
Visible and Infrared Emission from Er-doped III-N Light Emitting Diodes
John M. Zavada
Ei Ei Nyein
Jian-Wei Dong
OriginalPaper 01 November 2005 Pages: 76 - 83
Combined Excitation Emission Spectroscopy of Europium ions in GaN and AlGaN films
V. Dierolf
Z. Fleischman
A. Steckl
OriginalPaper 01 November 2005 Pages: 84 - 89
Nonequilibrium Carrier Dynamics Studied in Er,O-Codoped GaAs by Pump-Probe Reflection Technique
Yasufumi Fujiwara
Kazuhiko Nakamura
Masayoshi Tonouchi
OriginalPaper 01 November 2005 Pages: 90 - 94
Energy-Back-Transfer Process in Rare-Earth Doped AlGaN
A. Wakahara
T. Fujiwara
H. Itho
OriginalPaper 01 November 2005 Pages: 95 - 100
Rare earth ion implantation for silicon based light emission: From infrared to ultraviolet
W. Skorupa
J. M. Sun
M. Helm
OriginalPaper 01 November 2005 Pages: 101 - 112
Characterization of Er/O-doped Si-LEDs with low thermal quenching
A. Karim
W.-X. Ni
G.V. Hansson
OriginalPaper 01 November 2005 Pages: 113 - 119
Study of Optical Gain in Thick GaN Epilayers by Variable Stripe Length Technique
G. Tamulaitis
J. Mickevičius
R. Gaska
OriginalPaper 01 November 2005 Pages: 120 - 125
Synthesis and Unprecedented Electro-Optic Response Properties of Twisted π-System Chromophores
Hu Kang
Antonio Facchetti
Tobin J. Marks
OriginalPaper 01 November 2005 Pages: 126 - 131
Influence of rapid thermal annealing on self-assembled quantum-dot superluminescent diodes
Z.Y. Zhang
Y.Y. Tsui
Z.G. Wang
OriginalPaper 01 November 2005 Pages: 132 - 134
Highly Fluorinated Hybrid Glasses doped with (Erbium-ions/CdSe Nanoparticles) Designed for Advanced Laser Amplifiers
Kyung M. Choi
John A. Rogers
OriginalPaper 01 November 2005 Pages: 135 - 142
Fabrication of Er³⁺/Pr³⁺ Co-doped Soda-lime Glass Thin Films Using RF Magnetron Sputtering Method and Optical Property Characterization
Sang-Hoon Shin
Sung-Dae Kim
Jin Hyeok Kim
OriginalPaper 01 November 2005 Pages: 143 - 148
Tm-Er codoping Al₂O₃ Thin Films: Activation by Annealing
Zhisong Xiao
R. Serna
I. Vickridge
OriginalPaper 01 November 2005 Pages: 149 - 154
The Impact of Deposition Parameters on the Optical and Compositional Properties of Er Doped SRSO Thin Films Deposited by ECR-PECVD
Michael Flynn
Jacek Wojcik
Peter Mascher
OriginalPaper 01 November 2005 Pages: 155 - 159
Luminescence of Rare Earth Doped Si/ZrO₂ Co-Sputtered Films
C. Rozo
L. F. Fonseca
S. Z. Weisz
OriginalPaper 01 November 2005 Pages: 160 - 165
Gallium Oxide as a Host for Rare Earth Elements
J. F. Muth
P. Gollakota
L.M. Lunardi
OriginalPaper 01 November 2005 Pages: 166 - 171
Erbium-doped amorphous- Si-C-O matrix (a-SiC_xO_y:Er) - A novel silicon-based material for near-infrared optoelectronic applications
Spyros Gallis
Mengbing Huang
Uwe Hommerich
OriginalPaper 01 November 2005 Pages: 172 - 177
Lattice Location of Rare Earth Ions in Semiconductors: Interpretation and Limitations of using g values
David Carey
OriginalPaper 01 November 2005 Pages: 178 - 183
Nanocrystalline Rare Earth-doped Gallium Nitride Phosphor Powders
G.A. Hirata
J. Tao
J. McKittrick
OriginalPaper 01 November 2005 Pages: 184 - 189

Volume 866, Issue 1

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