Volume 864, Issue 1

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December 2004

Symposium E — Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices

Issue Editors:

S. Ashok,
J. Chevallier,
P. Kiesel,
B. L. Sopori,
M. Tabe

86 articles in this issue

Optical and Electrical Characterization of Quantum Dot Infrared Photodetector Structure Treated with Hydrogen-Plasma
H. D. Nam
J. D. Song
H. S. Yang
OriginalPaper 01 October 2005 Article: 940
Defect Reduction in Si-based Metal-Semiconductor-Metal Photodetectors with Cryogenic Processed Schottky Contacts
M. Li
W. A. Anderson
OriginalPaper 01 October 2005 Article: 939
Probing Process-Induced Defects in Si Using Infrared Photoelastic Stress Measurement Technique
X. H. Liu
S. P. Wong
Shounan Zhao
OriginalPaper 01 October 2005 Article: 938
Thermal Transformation of Hydrogen Bonds in a-SiC:H Films: Structural and Optical Properties
Andrey V. Vasin
Sergey P. Kolesnik
S. Ashok
OriginalPaper 01 October 2005 Article: 937
Identification and Characterization of Submicron Defects for Semiconductor Processing
Wei Liu
Aime Fausz
Steve Schauer
OriginalPaper 01 October 2005 Article: 935
Photoelectron Emission Technique for the Surface Analysis of Silicon Wafer Covered with Oxide Film
Takao Sakurai
Yoshihiro Momose
Keiji Nakayama
OriginalPaper 01 October 2005 Article: 934
Effect of Substrate Orientation on the Growth Rate and Surface Morphology on GaSb Grown by Metal-Organic Vapor Phase Epitaxy
Jian Yu
Ishwara B. Bhat
OriginalPaper 01 October 2005 Article: 933
Effect of Deuterium Diffusion on the Electrical Properties of AlGaN/GaN Heterostructures
Jaime Mimila Arroyo
Michel Barbé
Jean Massies
OriginalPaper 01 October 2005 Article: 931
Hydrogen Ion Implantation Caused Defect Structures in Heavily Doped Silicon Substrates
Minhua Li
Q. Wang
OriginalPaper 01 October 2005 Article: 929
Mechanism of Dopant Activation Enhancement in Shallow Junctions by Hydrogen
A. Vengurlekar
S. Ashok
H. Win Ye
OriginalPaper 01 October 2005 Article: 928
Hydrogen Diffusion in Boron-Doped Hydrogenated Amorphous Silicon Films: Crystallization and Induced Structural Changes
F. Kail
A. Hadjadj
P. Roca i Cabarrocas
OriginalPaper 01 October 2005 Article: 927
P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon
Y. L. Huang
E. Simoen
P. Clauws
OriginalPaper 01 October 2005 Article: 926
μ-Raman Spectra Analysis of the Evolution of Hydrogen Related Defects and Void Formation in the Silicon Ion-Cut Process
W. Düngen
R. Job
J. T. Horstmann
OriginalPaper 01 October 2005 Article: 925
Ab initio Studies of Electronic Structure of Defects in PbTe
Salameh Ahmad
Daniel Bilc
M. G. Kanatzidis
OriginalPaper 01 October 2005 Article: 923
Contact Free Defect Investigation in as grown Fe-doped SI-InP
Sabrina Hahn
Kay Dornich
Georg Müller
OriginalPaper 01 October 2005 Article: 921
General Model of Diffusion of Interstitial Oxygen in Silicon and Germanium Crystals
Vasilii Gusakov
OriginalPaper 01 October 2005 Article: 920
Influence of Oxygen Vacancies and Strain on Electronic Reliability of SiO_2-x Films
Ken Suzuki
Yuta Ito
Tetsuo Shoji
OriginalPaper 01 October 2005 Article: 919
Impacts of Back Surface Conditions on the Behavior of Oxygen in Heavily Arsenic Doped Czochralski Silicon Wafers
Q. Wang
Manmohan Daggubati
Xiao Feng Zhang
OriginalPaper 01 October 2005 Article: 918
Barrier to Migration of the Intrinsic Defects in Silicon in Different Charged System Using First-principles Calculations
Jinyu Zhang
Yoshio Ashizawa
Hideki Oka
OriginalPaper 01 October 2005 Article: 917
Theoretical Investigation of Formation of (n-n⁺)-Junction in Ion-Implanted Crystalline Matrix
R. Peleshchak
O. Kuzyk
H. Khlyap
OriginalPaper 01 October 2005 Article: 916
The Electrical Phenomena of Non-planar Structure and Devices using Plasma Doping
Jong-Heon Yang
In-Bok Baek
Seongjae Lee
OriginalPaper 01 October 2005 Article: 915
Controlled Growth of ZnO films on Si Substrate and N-doping Behavior
Y. F. Mei
Ricky K. Y. Fu
Paul K. Chu
OriginalPaper 01 October 2005 Article: 711
Electronic and Optical Properties of Energetic Particle-Irradiated In-rich InGaN
S. X. Li
K. M. Yu
W. Kemp
OriginalPaper 01 October 2005 Article: 710
A Novel Method to Synthesize Blue-Luminescent Doped GaN Powders
R. Garcia
A. Thomas
F. A. Ponce
OriginalPaper 01 October 2005 Article: 610
Infrared Spectroscopy of Impurities in ZnO Nanoparticles
W. M. Hlaing Oo
M. D. McCluskey
OriginalPaper 01 October 2005 Article: 440
Elastic Stress Relaxation at Nanoscale: A Comprehensive Theoretical and Experimental Investigation of the Dislocation Loops Associated with As-Sb Nanoclusters in GaAs
V. V. Chaldyshev
A. L. Kolesnikova
A. E. Romanov
OriginalPaper 01 October 2005 Article: 438
Direct Measurement of Ion Beam Induced, Nanoscale Roughening of GaN
Bentao Cui
P. I. Cohen
A. M. Dabiran
OriginalPaper 01 October 2005 Article: 437
Radiative Versus Nonradiative Decay Processes in Germanium Nanocrystals Probed by Time-resolved Photoluminescence Spectroscopy
P. K. Giri
R. Kesavamoorthy
K. G. M. Nair
OriginalPaper 01 October 2005 Article: 436
Impact of Small Miscuts of (0001) Sapphire on the Growth of Al_xGa_1-xN/AlN
Zheng Gong
Wenhong Sun
M. Asif Khan
OriginalPaper 01 October 2005 Article: 434
Device Parametric Shift Mechanism Caused by Boron Halo Redistribution Resulting from Dose Rate Dependence of SDE Implant
Ukyo Jeong
Jinning Liu
Sandeep Mehta
OriginalPaper 01 October 2005 Article: 432
Transmission Electron Microscopy Studies of Strained Si CMOS
Qianghua Xie
Peter Fejes
Ran Liu
OriginalPaper 01 October 2005 Article: 431
Si₃H₈ Based Epitaxy of Biaxially Stressed Silicon Films Doped with Carbon and Arsenic for Cmos Applications
M. Bauer
S. Zollner
C. Arena
OriginalPaper 01 October 2005 Article: 430
Solid Phase Recrystallization and Strain Relaxation in Ion-Implanted Strained Si on SiGe Heterostructures
M. S. Phen
R. T. Crosby
A. N. Larsen
OriginalPaper 01 October 2005 Article: 428
Modelling the MOS Device Conductance Using an Extended Tunnelling Model and Subsequent Determination of Interface Traps.
N. Konofaos
OriginalPaper 01 October 2005 Article: 425
Point Defects Interaction with Extended Defects and Impurities and its Influences on the Si-SiO₂ System Properties
D. Kropman
U. Abru
A. Samoson
OriginalPaper 01 October 2005 Article: 424
Various Methods to Reduce Defect States in Tantalum Oxide Capacitors for DRAM Applications
W. S. Lau
G. Zhang
P. K. Chu
OriginalPaper 01 October 2005 Article: 422
Compositional Changes in the Infrared Optical Properties of Cr Doped CdZnTe Crystals
U. Hömmerich
A. G. Bluiett
R. T. Shah
OriginalPaper 01 October 2005 Article: 419
Defect Characterization of CdTe Bulk Crystals Doped with Heavy Elements and Rare Earths
Svetlana Neretina
N. V. Sochinskii
E. Saucedo
OriginalPaper 01 October 2005 Article: 418
Transmission Electron Microscopy Study of Nonpolar a-Plane GaN Grown by Pendeo-Epitaxy on (1120) 4H-SiC.
D. N. Zakharov
Z. Liliental-Weber
R. F. Davis
OriginalPaper 01 October 2005 Article: 414
Structural and Optical Properties of Thin Metal-Oxide Films (ZnO and SnO_x) Deposited on Glass and Silicon Substrates
Serekbol Zh. Tokmoldin
Bulat N. Mukashev
Irina V. Ovcharenko
OriginalPaper 01 October 2005 Article: 410
A Pulsed EDMR Study of Charge Trapping at P_b Centers
Christoph Boehme
Felice Friedrich
Klaus Lips
OriginalPaper 01 October 2005 Article: 113
Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers
K. Dornich
T. Hahn
J. R. Niklas
OriginalPaper 01 October 2005 Article: 112
Three Dimensional Hydrogen Microscopy in Diamond
Günther Dollinger
Patrick Reichart
Christoph Wild
OriginalPaper 01 October 2005 Article: 111
Hydrogen Donors in ZnO
M. D. McCluskey
S. J. Jokela
W. M. Hlaing Oo
OriginalPaper 01 October 2005 Article: 104
Void Formation in Hydrogen Implanted and Subsequently Plasma Hydrogenated and Annealed Czochralski Silicon
R. Job
W. Düngen
J. T. Horstmann
OriginalPaper 01 October 2005 Article: 102
The Role of Surface Annihilation in Annealing Investigated by Atomic Model Simulation
Min Yu
Xiao Zhang
Hideki Oka
OriginalPaper 01 October 2005 Article: 99
Blistering and Splitting in Hydrogen-implanted Silicon
E. Ntsoenzok
H. Assaf
S. Ashok
OriginalPaper 01 October 2005 Article: 98
Thermal Growth of He-cavities in Si Studied by Cascade Implantation
E. Ntsoenzok
R. El Bouayadi
S. Ashok
OriginalPaper 01 October 2005 Article: 97
Nanoindentation as a Tool for Formation of Thin Film-Based Barrier Structures
H. Khlyap
P. Sydorchuk
OriginalPaper 01 October 2005 Article: 94
Fabrication of Silicon Carbide PIN Diodes by Laser Doping and Planar Edge Termination by Laser Metallization
Z. Tian
N. R. Quick
A. Kar
OriginalPaper 01 October 2005 Article: 93

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