Volume 830, Issue 1 | MRS Online Proceedings Library

Search all MRS Online Proceedings Library articles

Volume 830, Issue 1

December 2004

Symposium D – Materials and Processes for Nonvolatile Memories

Issue Editors:

A. Claverie,
T.-J. King,
J. Slaughter,
D. Tsoukalas

53 articles in this issue

Backside Storage Non-Volatile Memories: Ultra-Thin Silicon Layer on a Complex Thin Film Structure
H. Silva
S. Tiwari
OriginalPaper 01 February 2005 Pages: 1 - 5
Characterization of MFMIS and MFIS Structures for Non-volatile Memory Applications
Mosiur Rahman
T. S. Kalkur
David Klingensmith
OriginalPaper 01 February 2005 Pages: 6 - 12
Improved size dispersion of silicon nanocrystals grown in a batch LPCVD reactor
Y. M. Wan
K. van der Jeugd
P. Mur
OriginalPaper 01 February 2005 Pages: 13 - 18
Growth Temperature and Properties of Ge₄Sb₃Te₃ Films
W. D. Song
L. P. Shi
T. C. Chong
OriginalPaper 01 February 2005 Pages: 19 - 24
Effect of the Bottom Electrode Contact (BEC) on the phase transformation of N₂ doped Ge₂Sb₂Te ₅ (N-GST) in a Phase-change Random Access Memory
Suyoun Lee
Y. J. Song
Kinam Kim
OriginalPaper 01 February 2005 Pages: 25 - 30
Future Directions of Non-volatile Memory Technologies
Albert Fazio
OriginalPaper 01 February 2005 Pages: 31 - 39
Non Volatile Memory Technologies: Floating Gate Concept Evolution
Cesare Clementi
Roberto Bez
OriginalPaper 01 February 2005 Pages: 40 - 51
Lateral Distribution of Electrons Trapped in Nitride Layers
M. Lorenzini
M. Rosmeulen
K. De Meyer
OriginalPaper 01 February 2005 Pages: 52 - 57
Integration and Performance Improvements of Silicon Nanocrystal Memories
T. Hiramoto
I. Kim
K. Yanagidaira
OriginalPaper 01 February 2005 Pages: 58 - 65
Optimisation and Simulation of an Alternative nano-flash Memory: the SASEM device
C. Krzeminski
E. Dubois
V. Bayot
OriginalPaper 01 February 2005 Pages: 66 - 71
Influence of Thermal Treatments on the Chemistry and Self-Assembly of Ge Nanoparticles on SiO₂ Surfaces
Scott K. Stanley
Shawn S. Coffee
John G. Ekerdt
OriginalPaper 01 February 2005 Pages: 72 - 77
Low Voltage and High Speed Silicon Nanocrystal Memories
Josep Carreras
B. Garrido
J. R. Morante
OriginalPaper 01 February 2005 Pages: 78 - 83
Ferroelectric Thin Film Depositions for Various Types of FeRAMs (Ferroelectric Random Access Memories)
Yoshihisa Fujisaki
Hiroshi Ishiwara
OriginalPaper 01 February 2005 Pages: 84 - 95
Device Structures and Charicterization of one Tansistor Ferroelectric Memory Devices
Tingkai Li
Sheng Teng Hsu
Dave Evans
OriginalPaper 01 February 2005 Pages: 96 - 101
Step Coverage and Composition of Pb(Zr, Ti)O₃ Capacitors Prepared on Sub-Micron Three-Dimensional Trench Structure by Metalorganic Chemical Vapor Deposition
Atsushi Nagai
Gouji Asano
Hiroshi Funakubo
OriginalPaper 01 February 2005 Pages: 102 - 107
δ-Nb-doping Effect to The Interface Between IrO₂ Top Electrode and Pb(Zr, Ti)O₃ by Metal Organic Chemical Vapor Deposition
Osamu Matsuura
Hideki Yamawaki
Yoshihiro Sugiyama
OriginalPaper 01 February 2005 Pages: 108 - 112
Quantifying the Role of Electronic Charge Trap States on Imprint Behavior in Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) Thin Films
Connie Lew
Michael O. Thompson
OriginalPaper 01 February 2005 Pages: 113 - 118
Ferroelectric 1-T memory device—will it be viable for nonvolatile memory applications?
Jin-Ping Han
OriginalPaper 01 February 2005 Pages: 119 - 130
Non-volatile Thin Film Transistors Using Ferroelectric/ITO Structures.
Eisuke Tokumitsu
Takaaki Miyasako
Masaru Senoo
OriginalPaper 01 February 2005 Pages: 131 - 136
Long Time Data Retention and A Mechanism in Ferroelectric-Gate Field Effect Transistors with HfO₂ Buffer Layer
Koji Aizawa
Yoshihito Kawashima
Hiroshi Ishiwara
OriginalPaper 01 February 2005 Pages: 137 - 142
Improvement of Ferroelectric and Electrical Properties of Sol-Gel deposited Bi₄Ti₃Oi₂ Thin Films by Multiple Rapid Thermal Annealing Techniques
Hua. Wang
Minfang Ren
OriginalPaper 01 February 2005 Pages: 143 - 147
Dielectric and fatigue properties of Pb(Zr_0.53Ti_0.47)O₃ thin films prepared from oxide precursors method
Silvia T. Shibatta-Kagesawa
C. A. Guarany
N. Oki
OriginalPaper 01 February 2005 Pages: 148 - 153
UV Assisted Rapid Thermal Processing of Strontium Bismuth Tantalate (SBT) Thin Films
S. O'Brien
P. K. Hurley
D. Wouters
OriginalPaper 01 February 2005 Pages: 154 - 158
Thin Ferroelectric Film between Double Schottky Barriers
Lyuba A. Delimova
Igor V. Grekhov
Youngsoo Park
OriginalPaper 01 February 2005 Pages: 159 - 164
Improvement of Ferroelectric Properties of Lead Zirconate Titanate Thin Films by Ion-substitution using Rare-earth Cations
Hiroshi Nakaki
Hiroshi Uchida
Seiichiro Koda
OriginalPaper 01 February 2005 Pages: 165 - 170
Perfectly c-axis oriented epitaxial lead titanate thin film deposited by a hydrothermal method for a data storage medium
Takeshi Morita
Yasuo Cho
OriginalPaper 01 February 2005 Pages: 171 - 176
Switching Properties of PST Ferroelectric Films for Memory Applications using Conductive Oxide LSCO Electrodes
E. Martínez
O. Blanco
J. M. Siqueiros
OriginalPaper 01 February 2005 Pages: 177 - 182
Excimer (XeCl) Laser Annealing of PbZr0.4Ti0.6O3 Thin Film at Low Temperature for TFT FeRAM Application
W. X. Xianyu
H. S. Cho
T. Noguchi
OriginalPaper 01 February 2005 Pages: 183 - 188
Development of Nonvolatile Memory using Well-Ordered Ferroelectric Linear Molecules
Kenji Ishida
Kazunari Katsumoto
Kazumi Matsushige
OriginalPaper 01 February 2005 Pages: 189 - 194
Reliability of 4-Mbit Toggle MRAM
Johan Åkerman
Philip Brown
Saied Tehrani
OriginalPaper 01 February 2005 Pages: 195 - 204
Semiconductor Nanocrystal Floating-gate Memory Devices
P. Dimitrakis
P. Normand
OriginalPaper 01 February 2005 Pages: 205 - 218
Manipulation of 2D arrays of Si nanocrystals by ultra-low-energy ion beam-synthesis for nonvolatile memories applications
C. Bonafos
N. Cherkashin
A. Claverie
OriginalPaper 01 February 2005 Pages: 219 - 224
Characterization of Number Fluctuations in Gate-last Metal Nanocrystal Nonvolatile Memory Array beyond 90nm CMOS Technology
Chungho Lee
Udayan Ganguly
Edwin C. Kan
OriginalPaper 01 February 2005 Pages: 225 - 230
Reliable, Fast and Long Retention Si Nanocrystal Non-Volatile Memories
Josep Carreras
B. Garrido
J. R. Morante
OriginalPaper 01 February 2005 Pages: 231 - 236
Local Self-Order Observed During Chemical Vapor Deposition of Silicon Quantum Dots for Application in Nanocrystal Memories
Rosaria A. Puglisi
Giuseppe Nicotra
Cosimo Gerardi
OriginalPaper 01 February 2005 Pages: 237 - 243
A Model of Silicon Nanocrystal Nucleation and Growth on SiO₂ by CVD
M. W. Stoker
T. P. Merchant
B. E. White Jr
OriginalPaper 01 February 2005 Pages: 244 - 249
Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures
Seiichi Miyazaki
Taku Shibaguchi
Mitsuhisa Ikeda
OriginalPaper 01 February 2005 Pages: 250 - 255
Small “Magnetic” Clusters of Ga and In with As and V
Liudmila A. Pozhar
Alan T. Yeates
William C. Mitchel
OriginalPaper 01 February 2005 Pages: 256 - 261
Search for magnetism in Co and Fe-doped HfO₂ thin films for potential spintronic applications
M. S. R. Rao
Darshan C. Kundaliya
T. Venkatesan
OriginalPaper 01 February 2005 Pages: 262 - 275
Preparation of Strontium Bismuth Tantalate Thin Film by Liquid-Delivery Metalorganic Chemical Vapor Deposition
M. Silinskas
M. Lisker
E. Burte
OriginalPaper 01 February 2005 Pages: 276 - 281
All-organic single-transistor permanent memory device
Raoul Schroeder
Leszek A. Majewski
Martin Grell
OriginalPaper 01 February 2005 Pages: 282 - 287
Ge nanocrystals in MOS-memory structures produced by molecular-beam epitaxy and rapid-thermal processing
A. Nylandsted Larsen
A. Kanjilal
A. Claverie
OriginalPaper 01 February 2005 Pages: 288 - 292
Enhanced Spontaneous Polarization of Dysprosium-substituted Lead Zirconate Titanate Thin Films by a Chemical Solution Deposition Method
Hiroshi Uchida
Hiroshi Nakaki
Seiichiro Koda
OriginalPaper 01 February 2005 Pages: 293 - 298
Chemical Vapor Deposition of Germanium Nanocrystals on Hafnium Oxide for Non-Volatile Memory Applications
Ying Qian Wang
Jing Hao Chen
Yee-Chia Yeo
OriginalPaper 01 February 2005 Pages: 299 - 304
Synthesis and Electrical Characterization of a MOS Memory Containing Pt Nanoparticles Deposited at a SiO₂/ HfO₂ Interface
Ch. Sargentis
K. Giannakopoulos
D. Tsamakis
OriginalPaper 01 February 2005 Pages: 305 - 310
Oxidation of Si nanocrystals fabricated by ultra-low energy ion implantation in thin SiO₂ layers
H. Coffin
C. Bonafos
A. Claverie
OriginalPaper 01 February 2005 Pages: 311 - 316
Gold Langmuir-Blodgett deposited nanoparticles for non-volatile memories
S. Kolliopoulou
D. Tsoukalas
M. C. Petty
OriginalPaper 01 February 2005 Pages: 317 - 322
Polymer electrical bistable device and memory cells
Jianyong Ouyang
Chih-Wei Chu
Yang Yang
OriginalPaper 01 February 2005 Pages: 323 - 331
Non-Volatile Giant Resistance Switching in Metal-Insulator-Manganite Junctions
Rickard Fors
Sergey I. Khartsev
Alexander M. Grishin
OriginalPaper 01 February 2005 Pages: 332 - 337
Organic Memory Devices Using C₆₀ and Insulating Polymer
Alokik Kanwal
Shashi Paul
Manish Chhowalla
OriginalPaper 01 February 2005 Pages: 338 - 342