Volume 816, Issue 1

Search all MRS Online Proceedings Library articles

December 2004

Symposium K – Advances in Chemical-Mechanical Polishing

Issue Editors:

J.W. Bartha,
D. Boning,
A. Philipossian,
G. Shinn,
I. Vos

37 articles in this issue

Challenges and Rewards of Low-Abrasive Copper CMP: Evaluation and Integration for Single-Damascene Cu/Low-k Interconnects for the 90nm Node
Christopher L. Borst
Stanley M. Smith
Mona Eissa
OriginalPaper 01 November 2004 Pages: 111 - 121
Investigation of the influence of different copper slurry systems on post CMP topography performance
Goetz Springer
Peter Thieme
Pierre Klose
OriginalPaper 01 November 2004 Pages: 121 - 128
Copper CMP Formulation for 65 nm Device Planarization
Gregory T. Stauf
Karl Boggs
Thomas Baum
OriginalPaper 01 November 2004 Pages: 131 - 136
Effect of Hydrogen Peroxide on Oxidation of Copper in CMP Slurries Containing Glycine and Cu Sulfate
Tianbao Du
Arun Vijayakumar
Vimal Desai
OriginalPaper 01 November 2004 Pages: 141 - 146
Modified Abrasives based on fumed SiO₂ and Al₂O₃ for the Cu CMP Process
D. Zeidler
J. W. Bartha
R. Brandes
OriginalPaper 01 November 2004 Pages: 161 - 166
Novel Pure Organic Particles for Copper CMP at Low Down Force
K. Cheemalapati
A. Chowdhury
Yuzhuo Li
OriginalPaper 01 November 2004 Pages: 171 - 177
Effect of Nano-Size Silica Abrasives in Chemical Mechanical Polishing of Copper
Su-Ho Jung
Rajiv K. Singh
OriginalPaper 01 November 2004 Pages: 181 - 184
A Model of Cu-CMP
Ed Paul
Vlasta Brusic
Frank Kaufman
OriginalPaper 01 November 2004 Pages: 221 - 227
Coherent Chip-Scale Modeling for Copper CMP Pattern Dependence
Hong Cai
Tae Park
Jeong-Gun Lee
OriginalPaper 01 November 2004 Pages: 241 - 248
Polish profile control using magnetic control head
Manabu Tsujimura
Yu Ishii
Masahiro Ota
OriginalPaper 01 November 2004 Pages: 311 - 318
Adaptive Piezo-Controlled Carrier for CMP Processing
Christian-Toralf Weber
Jürgen Weiser
Johann W. Bartha
OriginalPaper 01 November 2004 Pages: 321 - 325
Metrological Assessment of the Coefficient of Friction of Various Types of Silica Using the Motor Current During ILD-CMP
Harald Jacobsen
Eric Stachowiak
Ralph Brandes
OriginalPaper 01 November 2004 Pages: 331 - 336
Measurement of Electroplated Copper Overburden for Advanced Process Development and Control
Joshua Tower
Alexei Maznev
Koichi Otsubo
OriginalPaper 01 November 2004 Pages: 411 - 416
A Study on the Self-Stopping CMP Process for the Planarization of the High Step Height(@step height>1.5um) Pattern
Kwang-Bok Kim
Hyo-Jin Lee
Chang-Lyong Song
OriginalPaper 01 November 2004 Pages: 421 - 425
Modeling of Pattern Density Dependent Pressure Non-Uniformity at a Die Scale for ILD Chemical Mechanical Planarization
Jihong Choi
David A. Dornfeld
OriginalPaper 01 November 2004 Pages: 441 - 446
Effect of Abrasive in Cu-CMP Slurry on Global Planarization
Yutaka Nomura
Hiroshi Ono
Masato Yoshida
OriginalPaper 01 November 2004 Pages: 451 - 455
Investigation of Mechanical Integrity and its effect on Polishing for Novel Polyurethane Polishing Pad
Parshuram Zantye
S. Mudhivarthi
Julie Harmon
OriginalPaper 01 November 2004 Pages: 471 - 476
Interaction between abrasive particles and film surfaces in low down force Cu CMP
Yuchun Wang
Isaac Zomora
Shumin Wang
OriginalPaper 01 November 2004 Pages: 481 - 486
Effect of Particle Interaction on Agglomeration of Silica-Based CMP Slurries
A. Sorooshian
R. Ashwani
A. Tregub
OriginalPaper 01 November 2004 Pages: 491 - 497
Micro Feature Pad Development and Its Performance in Chemical Mechanical Planarization
Sunghoon Lee
David A. Dornfeld
OriginalPaper 01 November 2004 Pages: 511 - 515
Characterization of CMP Pad Surface Texture and Pad-Wafer Contact
Gregory P. Muldowney
David B. James
OriginalPaper 01 November 2004 Pages: 521 - 531
Modeling CMP Transport and Kinetics at the Pad Groove Scale
Gregory P. Muldowney
OriginalPaper 01 November 2004 Pages: 531 - 536
In-Situ Friction and Pad Topography Measurements During CMP
Caprice Gray
Daniel Apone
Chris Rogers
OriginalPaper 01 November 2004 Pages: 541 - 549
Metrology of Psiloquest’s Application Specific Pads (ASP) for CMP Applications
Parshuram B. Zantye
S. Mudhivarthi
Yaw Obeng
OriginalPaper 01 November 2004 Pages: 561 - 566
Influence of Electrochemical Plating Process Parameters on Corrosion of CU Damascene Interconnects
D. Ernur
W. Wu
K. Maex
OriginalPaper 01 November 2004 Pages: 611 - 616
Advances in the CMP Process on Fixed Abrasive Pads for the Polishing of SOI- Substrates with High Degree of Flatness
Martin Kulawski
Hannu Luoto
Jari Mäkinen
OriginalPaper 01 November 2004 Pages: 721 - 726
Analysis of Nanotopography in Silicon Generated by the Polishing Process
Hiromichi Isogai
Katsuyoshi Kojima
OriginalPaper 01 November 2004 Pages: 731 - 736
The Application of Chemical Mechanical Polishing for Nickel Used in MEMS Devices
Arun Vijayakumar
Tianbao Du
Vimal Desai
OriginalPaper 01 November 2004 Pages: 751 - 756
CMP Modeling and Characterization for Polysilicon MEMS Structures
Brian Tang
Duane Boning
OriginalPaper 01 November 2004 Pages: 761 - 768
Planarization Issues in Wafer-Level Three-Dimensional (3D) Integration
J.-Q. Lu
G. Rajagopalan
R. J. Gutmann
OriginalPaper 01 November 2004 Pages: 771 - 782
Pad Asperity Parameters for CMP Process Simulation
Takafumi Yoshida
OriginalPaper 01 November 2004 Pages: 841 - 846
Assessment of Planarization length variation by the Step-Polish-Response (SPR) Method
Johann. W. Bartha
Tilo Bormann
Dieter Zeidler
OriginalPaper 01 November 2004 Pages: 851 - 856
Cerium Oxide Abrasives–Observations and Analysis
David R. Evans
OriginalPaper 01 November 2004 Pages: 911 - 921
Material Removal Mechanisms of Oxide and Nitride CMP with Ceria and Silica-Based Slurries - Analysis of Slurry Particles Pre- and Post-Dielectric CMP
Naga Chandrasekaran
OriginalPaper 01 November 2004 Pages: 921 - 931
WID Rnit Variation Improvements for HSS STI CMP Process using Modified Scribe Lane Pattern Design
Hyuk Kwon
Yong-Soo Choi
Gyu-Han Yoon
OriginalPaper 01 November 2004 Pages: 931 - 936
Characterizing STI CMP Processes with an STI Test Mask Having Realistic Geometric Shapes
Xiaolin Xie
Tae Park
Neil Patel
OriginalPaper 01 November 2004 Pages: 941 - 948
Investigation and Control of Chemical and Surface Chemical Effects During Dielectric CMP
J. T. Abiade
W. Choi
R. K. Singh
OriginalPaper 01 November 2004 Pages: 951 - 956

Volume 816, Issue 1

Search

Navigation