Volume 813, Issue 1

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December 2004

Symposium G – Hydrogen in Semiconductors

Issue Editors:

N.H. Nickel,
M.D. McCluskey,
S. Zhang

21 articles in this issue

Determination of Hydrogen in Semiconductors and Related Materials by Cold Neutron Prompt Gamma-ray Activation Analysis
Rick L. Paul
OriginalPaper 01 October 2004 Pages: 221 - 225
Non-metastable recombination induced reactions involving hydrogen in SiC.
Yaroslav Koshka
Bharat Krishnan
Michael S. Mazzola
OriginalPaper 01 October 2004 Pages: 251 - 256
Infrared Spectroscopy of Hydrogen in ZnO
M.D. McCluskey
S.J. Jokela
OriginalPaper 01 October 2004 Pages: 321 - 326
Hydrogen Bonding in ZnO
N. H. Nickel
K. Brendel
OriginalPaper 01 October 2004 Pages: 331 - 336
Hydrogen Intercalation Sites in Rutile Predicted from Ab Initio Calculations
Marina V. Koudriachova
Nicholas M. Harrison
Simon W. de Leeuw
OriginalPaper 01 October 2004 Pages: 341 - 346
Characteristic of hydrogenated Ga-doped ZnO films grown by DC magnetron sputtering using H₂/Ar gas
Satoshi Takeda
Makoto Fukawa
OriginalPaper 01 October 2004 Pages: 351 - 356
Anharmonicity in the Vibrational Modes Associated with H-H, N-H, O-H, and C-H bonds
Sukit Limpijumnong
OriginalPaper 01 October 2004 Pages: 361 - 372
Hydrogen induced degradation in GaInP/GaAs HBTs revealed by low frequency noise measurements
J.G. Tartarin
L. Escotte
J. Graffeuil
OriginalPaper 01 October 2004 Pages: 411 - 416
Impact of Hydrogen Plasma Treatment on Gettering by He Implantation-Induced Cavities in Silicon
D. Alquier
E. Ntsoenzok
S. Ashok
OriginalPaper 01 October 2004 Pages: 421 - 426
Effect of Hydrogen Treatment on Room -Temperature Electric-Field Induced Properties in Narrow-Gap ZnCdHgTe Thin Films
Galina M. Khlyap
Petro G. Sydorchuk
Jacek Polit
OriginalPaper 01 October 2004 Pages: 431 - 436
Hydrogen passivation of bulk defects and surface in silicon
Santo Martinuzzi
Olivier Palais
OriginalPaper 01 October 2004 Pages: 451 - 456
Hydrogen-Nitrogen Tailors Semiconductor Optoelectronics: The Case of Dilute Nitride III-V Alloys
A. Janotti
OriginalPaper 01 October 2004 Pages: 521 - 532
Deciphering the Vibrational Spectrum of Interstitial H₂ in Si
Michael Stavola
E Elinor Chen
W. Beall Fowler
OriginalPaper 01 October 2004 Pages: 611 - 621
On the Mechanism of Hydrogen Diffusion in Si Solar Cells Using PECVD SiN:H
B.L. Sopori
Y. Zhang
B. Bathey
OriginalPaper 01 October 2004 Pages: 621 - 627
How much hydrogen and voids are energetically stable in silicon thin films?
Anna Fontcuberta i Morral
Holger Vach
Pere Roca i Cabarrocas
OriginalPaper 01 October 2004 Pages: 631 - 635
Comparative Study of Electronically Controlled Motion of Hydrogen around Carbon and Platinum Atoms in Silicon
Yoichi Kamiura
Namula Bao
Takeshi Ishiyama
OriginalPaper 01 October 2004 Pages: 641 - 646
Vibrational Lifetimes of Hydrogen in Silicon: Isotope Effects and MOSFET Reliability
Gunter Lüpke
Baozhou Sun
Leonard C. Feldman
OriginalPaper 01 October 2004 Pages: 711 - 719
Origin of the Hydrogen/Deuterium (H/D) Isotope Effect of Hot-Electron Degradation of MOS Devices
Zhi Chen
Jun Guo
Pangleen Ong
OriginalPaper 01 October 2004 Pages: 721 - 725
Donor Behaviour of Implanted Hydrogen Ions in Silicon Wafers
Damien Barakel
Santo Martinuzzi
OriginalPaper 01 October 2004 Pages: 731 - 736
Formation of deuterium-related shallow donors in boron-doped diamond
Jacques Chevallier
Zéphirin Teukam
Alain Deneuville
OriginalPaper 01 October 2004 Pages: 821 - 831
Hydrogen diffusion in polycrystalline boron doped and undoped diamond
D. Ballutaud
A. Boutry-Forveille
A. Etcheberry
OriginalPaper 01 October 2004 Pages: 831 - 836

Volume 813, Issue 1

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