Volume 808, Issue 1

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December 2003

Symposium A – Amorphous and Nanocrystaline Silicon Science and Technology-2004

Issue Editors:

R. Biswas,
R. Carius,
G. Ganguly,
M. Kondo,
E. Schiff

99 articles in this issue

Threshold Voltage and Field for Metal Filament Formation in Hydrogenated Amorphous Silicon
P. Stradine
H. M. Branz
Q. Wang
OriginalPaper 01 September 2004 Pages: 1 - 6
Amorphous Silicon Backplane with Polymer MEMS Structures for Electrophoretic Displays
J. H. Daniel
B. S. Krusor
J. H. Ho
OriginalPaper 01 September 2004 Pages: 7 - 11
Metal induced crystallization of SiGe at 370° C for monolithically integrated MEMS applications
Sherif Sedky
Kris Baert
Ann Witvrouw
OriginalPaper 01 September 2004 Pages: 12 - 17
Correlation between Surface Charge Accumulation and Excitation Intensity Dependent Red-Shifted Micro-Photoluminescence of Si-Implanted Quartz with Embedded Si Nanocrystals
Chun-Jung Lin
Kuo-Cheng Yu
Gong-Ru Lin
OriginalPaper 01 September 2004 Pages: 18 - 23
Silicon-Hydrogen Bonds in Boron and Phosphorous Doped Polycrystalline Silicon Thin Films
R. Saleh
N. H. Nickel
OriginalPaper 01 September 2004 Pages: 24 - 29
Bottom-Gate TFTs with Channel Layer Grown by Pulsed PECVD Technique
David J. Grant
Czang-Ho Lee
Arun Madan
OriginalPaper 01 September 2004 Pages: 30 - 35
Hole Drift-Mobility Measurements and Multiple-Trapping in Microcrystalline Silicon
T. Dylla
F. Finger
E. A. Schiff
OriginalPaper 01 September 2004 Pages: 36 - 41
Growth and Characterization of Poly-SiGe Prepared by Reactive Thermal CVD
Jianjun Zhang
Kousaku Shimizu
Jun-ichi Hanna
OriginalPaper 01 September 2004 Pages: 42 - 47
Development of transparent conductive oxide materials for improved back reflector performance for amorphous silicon based solar cells
Scott J. Jones
David Tsu
Rey Capangpangan
OriginalPaper 01 September 2004 Pages: 48 - 53
Deposition of Optimal a-Si:H and a-SiGe:H by HWCVD Using the Same Filament Temperature and Substrate Temperature
A. H. Mahan
Y. Xu
L. M. Gedvilas
OriginalPaper 01 September 2004 Pages: 54 - 59
Suppression of Staebler-Wronski Effect Induced Electrical Crosstalk in a-Si:H-Based Image Sensors
Jeremy A. Theil
OriginalPaper 01 September 2004 Pages: 60 - 64
Vertically Integrated Amorphous Silicon Particle Sensors
N. Wyrsch
C. Miazza
G. Viertel
OriginalPaper 01 September 2004 Pages: 65 - 70
MEMS Microresonators Based on Nanocrystalline Silicon
J. Gaspar
T. Adrega
J. P. Conde
OriginalPaper 01 September 2004 Pages: 71 - 76
Absence of enhanced stability in deuterated amorphous silicon thin film transistors
Shufan Lin
Andrew J. Flewitt
Martin J. Powell
OriginalPaper 01 September 2004 Pages: 77 - 82
Study of 3-MeV electron irradiation damage in amorphous silicon with TRMC
A. Klaver
J. M. Warman
R. A. C. M. M. van Swaaij
OriginalPaper 01 September 2004 Pages: 83 - 88
Tritium Induced Defects in Amorphous Silicon
J. Whitaker
J. Viner
P. Stradins
OriginalPaper 01 September 2004 Pages: 89 - 94
Evolution of D⁰ and non-D⁰ Light Induced Defect States in a-Si:H Materials and Their Respective Contribution to Carrier Recombination
J. M. Pearce
J. Deng
P. C. Taylor
OriginalPaper 01 September 2004 Pages: 95 - 100
H Evolution from Nano-Crystalline Silicon-Comparison of Simulation and Experiment
R. Biswas
B. C. Pan
OriginalPaper 01 September 2004 Pages: 101 - 106
Gate Overlapped Lightly Doped Drain Poly-Si TFTs Employing 45 ° Tilt Implant For Source and Drain
Jae-Hoon Lee
Moon-Young Shin
Min-Koo Han
OriginalPaper 01 September 2004 Pages: 107 - 112
Accelerated Stress Testing of a-Si:H TFTs for AMOLED Displays
Kapil Sakariya
Clement K. M. Ng
Arokia Nathan
OriginalPaper 01 September 2004 Pages: 113 - 118
The p-channel a-Si:H Thin Film Transistor with Plasma Etched Copper Electrodes
Helinda Nominanda
Guojun Liu
Yue Kuo
OriginalPaper 01 September 2004 Pages: 119 - 124
Statistical Modeling of Grain-Enhanced Polysilicon Thin-Film Transistor in Consideration of Grain Boundary Distribution
C. F. Cheng
M. C. Poon
M. Chan
OriginalPaper 01 September 2004 Pages: 125 - 130
Intrinsic and Doped μο-8ΐ:Η TFT Layers using 13.56 MHz PECVD at 250 ^oC
Czang-Ho Lee
Denis Striakhilev
Arokia Nathan
OriginalPaper 01 September 2004 Pages: 131 - 136
Low Temperature (<150°C) Doping Techniques for Polysilicon TFT’s
W. S. Hong
J. M. Kim
D. Y. Kim
OriginalPaper 01 September 2004 Pages: 137 - 142
Low Temperature a-Si:H TFTs with a SiO₂ Gate Insulator Deposited by Liquid Phase Deposition
Richard B. M. Cross
David P. Oxley
Ekkanath. M. Sankara Narayanan
OriginalPaper 01 September 2004 Pages: 143 - 148
Location Control of Crystal Grains in Excimer Laser Crystallization of Silicon Thin Films for Single-Grain TFTs
Hideya Kumomi
Hiroaki Wakiyama
Tanemasa Asano
OriginalPaper 01 September 2004 Pages: 149 - 154
Aluminum-Induced Crystallization of PECVD Amorphous Silicon
Kenneth Jenq
Shawn S. Chang
Yahya Rahmat-Samii
OriginalPaper 01 September 2004 Pages: 155 - 160
Solar Cells on Foreign Substrates using Poly-Si Thin Films by Metal Induced Growth
Chunhai Ji
Wayne A. Anderson
OriginalPaper 01 September 2004 Pages: 161 - 166
The effect of substrate temperature and interface oxide layer on aluminum induced crystallization of sputtered amorphous silicon
Maruf Hossain
Husam Abu-Safe
William D. Brown
OriginalPaper 01 September 2004 Pages: 167 - 172
Initial Interaction of Crystalline Al/Amorphous Si Bilayer during Annealing
Yonghao Zhao
Jiangyong Wang
Eric J. Mittemeijer
OriginalPaper 01 September 2004 Pages: 173 - 178
In-Situ Aluminum-Induced Crystallization of Si Thin-Films on Glass Substrates above the Eutectic Temperature using HW-CVD
Ozgenc Ebil
Roger Aparicio
Robert Birkmire
OriginalPaper 01 September 2004 Pages: 179 - 184
Increase of temperature and crystallinity during electrical switching in microcrystalline silicon
Jian Hu
Paul Stradins
Daxing Han
OriginalPaper 01 September 2004 Pages: 185 - 190
Modeling of Aluminum Induced Lateral Crystallization of Hydrogenated Amorphous Silicon
Mohammad Saad Abbasi
Husam Abu-Safe
W. D. Brown
OriginalPaper 01 September 2004 Pages: 191 - 196
Development of a Porous Silicon Product for Small Molecule Mass Spectrometry
Grace Credo
Hillary Hewitson
Edouard S. P. Bouvier
OriginalPaper 01 September 2004 Pages: 197 - 202
Amorphous Si_1-YGe_Y :H, F films obtained by Low Frequency PECVD for uncooled microbolometers
R. Ambrosio
A. Torres
M. Garcia
OriginalPaper 01 September 2004 Pages: 203 - 208
High Current Density in μc-Si PECVD Diodes for Low Temperature Applications
Patricia A. Beck
Janice H. Nickel
Peter G. Hartwell
OriginalPaper 01 September 2004 Pages: 209 - 214
Si Wire Light Emission Changes During Si/SiO_xInterface Formation
F. G. Becerril-Espinoza
T. V. Torchynska
L. V. Scherbina
OriginalPaper 01 September 2004 Pages: 215 - 220
About the Luminescence Mechanisms of Composite a-Si:nc-Si System Obtained by Ion-Beam Amorphization in the Wide Dose Region
David I. Tetelbaum
Alexander A. Ezhevskii
Sergey V. Morozov
OriginalPaper 01 September 2004 Pages: 221 - 226
Buffer-layer Effect on Mixed-Phase Cells Studied by Micro-Raman and Photoluminescence Spectroscopy
Andrea Hilchey
Chris Lawyer
Subhendu Guha
OriginalPaper 01 September 2004 Pages: 227 - 232
Reversible Ordering of a-Si_1-xGex by the Combined Effect of Light and Temperature
P. Martín
A. Torres
T. Rodriguez
OriginalPaper 01 September 2004 Pages: 233 - 238
Evaluation of an alternative technique for the fabrication of direct detector X-ray imagers: spray pyrolysis of lead iodide and mercury iodide
J. F. Condeles
J. C. Ugucioni
M. Mulato
OriginalPaper 01 September 2004 Pages: 239 - 244
Are the Current Models Helpful to Understanding Staebler-Wronski Degradation?
Bolko von Roedern
OriginalPaper 01 September 2004 Pages: 245 - 250
Two terminal large area single and double p-i-n devices for image and color recognition
P. Louro
M. Vieira
G. Lavareda
OriginalPaper 01 September 2004 Pages: 251 - 256
A real-time optical signal and image processing p-i-n/p-i-n device
M. Vieira
P. Louro
J. Martins
OriginalPaper 01 September 2004 Pages: 257 - 262
Detection Limits of a nip a-Si:H Linear Array Position Sensitive Detector
R. Martins
D. Costa
E. Fortunato
OriginalPaper 01 September 2004 Pages: 263 - 268
Performance analysis of a-Si:H detectors deposited on CMOS chips
C. Miazza
S. Dunand
L. Cavalier
OriginalPaper 01 September 2004 Pages: 269 - 274
CW Argon-ion laser initiated aluminum induced crystallization of amorphous silicon thin films
Sampath K. Paduru
Husam H. Abu-safe
William D. Brown
OriginalPaper 01 September 2004 Pages: 275 - 280
Monolithically Integrated p- & n- Channel Thin Film Transistors of Nanocrystalline Silicon on Plastic Substrates
I-Chun Cheng
Sigurd Wagner
OriginalPaper 01 September 2004 Pages: 281 - 286
Fabrication and Characterization of Hydrogenated Amorphous Silicon Bipolar Thin Film Transistor (B-TFT)
Yue Kuo
Yu Lei
Helinda Nominanda
OriginalPaper 01 September 2004 Pages: 287 - 292
In-situ Observation of Silicon Epitaxy Breakdown with Real-Time Spectroscopic Ellipsometry
Charles W. Teplin
Dean H. Levi
Howard M. Branz
OriginalPaper 01 September 2004 Pages: 293 - 298

Volume 808, Issue 1

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