Volume 764, Issue 1

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December 2002

Symposium C — New Applications for Wide—Bandgap Semiconductors

Issue Editors:

A. G. Baca,
W. H. Chang,
J. I. Chyi,
J. Han,
S. J. Pearton

60 articles in this issue

Cathodoluminescence Study of Gadolinium–Doped Yttrium Oxide Thin Films Deposited By Radio–Frequency Magnetron Sputtering
J. D. Fowlkes
P. D. Rack
J. M. Fitz–Gerald
OriginalPaper 01 February 2011 Article: 712
Surface Acoustic Waves And Guided Optical Waves In AlGaN Films
Gang Bu
Daumantas Ciplys
Asif Khan
OriginalPaper 01 February 2011 Article: 610
Investigation of Thin Film Growth of B₁₂As₂ by Chemical Vapor Deposition
R. Nagarajan
J. H. Edgar
T. Aselage
OriginalPaper 01 February 2011 Article: 358
Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs
Konstantin A. Filippov
Alexander A. Balandin
OriginalPaper 01 February 2011 Article: 357
Optical and Electrical Characterization of Annealed Silicon-implanted GaN
H. T. Wang
L. S. Tan
E. F. Chor
OriginalPaper 01 February 2011 Article: 355
Experimental Evaluation of a-Se Flat-Panel X-ray Detector for Digital Radiography
Jang-Yong Choi
Ji-Koon Park
Sang-Hee Nam
OriginalPaper 01 February 2011 Article: 354
Time of Flight of Drifting Electrons and Holes in Stabilized a-Se Film
Dong-Gil Lee
Ji-Koon Park
Sang-Hee Nam
OriginalPaper 01 February 2011 Article: 353
Low Ohmic Contact Resistance of GaN by Employing XeCl Excimer Laser
Seung-Chul Lee
Jin-Cherl Her
Min-Koo Han
OriginalPaper 01 February 2011 Article: 352
ZnO Thin Films Grown at Various Substrate Angles by Pulsed Laser Deposition
Jeong Seok Kang
Hong Seong Kang
Sang Yeol Lee
OriginalPaper 01 February 2011 Article: 351
Er doped GaN by Gas Source Molecular Beam Epitaxy on GaN Templates
N. Rousseau
O. Briot
R. L. Aulombard
OriginalPaper 01 February 2011 Article: 350
High Reflectivity AlGaN/GaN Bragg Mirrors Grown by MOCVD for Microcavities Applications.
M. Moret
S. Ruffenach
R. L. Aulombard
OriginalPaper 01 February 2011 Article: 349
Modeling of Nitride Semiconductor Based Double Heterostructure Tunnel Diodes
M. Moret
S. Ruffenach
R. L. Aulombard
OriginalPaper 01 February 2011 Article: 348
Influence of Ion Energy on the Reactive Ion Etching Induced Optical Damage of Gallium Nitride
Suk Ing Liem
Roger J. Reeves
OriginalPaper 01 February 2011 Article: 346
Modeling of Thermal Conductivity of Polycrystalline GaN Films
D. Kotchetkov
A. A. Balandin
OriginalPaper 01 February 2011 Article: 343
Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN
S. Nakamura
P. Liu
T. Okumura
OriginalPaper 01 February 2011 Article: 339
Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior
M. Ahoujja
H. C. Crocket
R. L. Hengehold
OriginalPaper 01 February 2011 Article: 337
Structural and Optical Properties of InGaN/GaN Multi-Quantum Well Structures with Different Indium Compositions
Chang-Soo Kim
Sam-Kyu Noh
Jay P. Song
OriginalPaper 01 February 2011 Article: 335
Characterization of High Quality Continuous GaN Films Grown on Si-Doped Cracked GaN Template
C. B. Soh
J. Zhang
S. J. Chua
OriginalPaper 01 February 2011 Article: 334
Barrier Material Improvement in AlGaN/GaN Microwave Transistors Under Gamma Irradiation Treatment
S. A. Vitusevich
M. V. Petrychuk
L. F. Eastman
OriginalPaper 01 February 2011 Article: 331
Statistical Analysis of Micropipe Defect Distributions in Silicon Carbide Crystals
Troy Elkington
Ejiro Emorhokpor
Richard H. Hopkins
OriginalPaper 01 February 2011 Article: 329
Self-assembled InP Quantum Dot -TiO₂ Solid Grätzel Solar Cell
Tingying Zeng
Elizabeth Gladwin
Richard O. Claus
OriginalPaper 01 February 2011 Article: 325
Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia
F. Yun
L. He
W. J. Choyke
OriginalPaper 01 February 2011 Article: 323
High-Performance AlGaN-Based Visible-Blind Resonant Cavity Enhanced Schottky Photodiodes
Ibrahim Kimukin
Necmi Biyikli
Ekmel Ozbay
OriginalPaper 01 February 2011 Article: 322
The Refractive Index and Other Properties of Doped ZnO films
A. L. Cai
J. F. Muth
J. Narayan
OriginalPaper 01 February 2011 Article: 321
Effect of Mn Doping in ZnO Thin Films Deposited by Pulsed Laser Deposition
P. Bhattacharya
Rasmi R. Das
Ram S. Katiyar
OriginalPaper 01 February 2011 Article: 320
Cathodoluminescence, Electroluminescence, and Degradation of ZnCdSe Quantum Well Light Emitting Diodes
A. Yu. Nikiforov
G. S. Cargill III
Y. C. Chen
OriginalPaper 01 February 2011 Article: 318
TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts
D. N. Zakharov
Z. Liliental-Weber
S. N. Mohammad
OriginalPaper 01 February 2011 Article: 317
Fabrication and Characterizations of ZnO and ZnO:Mn Nanocrystalline Thin Films
Yichun Liu
Dongxu Zhao
R. Mu
OriginalPaper 01 February 2011 Article: 316
Effect of Si Layer in The ZnO Thin Films by Pulsed Laser Deposition
Hong Seong Kang
Jeong Seok Kang
Sang Yeol Lee
OriginalPaper 01 February 2011 Article: 312
Mocvd Zinc Oxide Films for Wide Bandgap Applications
C. E. Rice
G. S. Tompa
J. Cuchiaro
OriginalPaper 01 February 2011 Article: 310
In Situ SEM Observations and Electrical Measurements During the Annealing of Si/Ni Contacts to SiC
Matthew H. Ervin
Kenneth A. Jones
Mark C. Wood
OriginalPaper 01 February 2011 Article: 211
Laser Direct-Metallization of Silicon Carbide without Metal Deposition
I. A. Salama
A. Kar
N. R. Quick
OriginalPaper 01 February 2011 Article: 210
Modulation of Energy Band Gap of ZnO Thin Films Grown by Pulsed Laser Deposition
Sang Yeol Lee
Yuan Li
Joeng-Seok Kang
OriginalPaper 01 February 2011 Article: 79
GaN Growth on Si Using ZnO Buffer Layer
K. C. Kim
S. W. Kang
R. K. Singh
OriginalPaper 01 February 2011 Article: 77
GaN Epitaxial Growth by Molecular Beam Epitaxy utilizing AlGaN Buffer Layer with Nanopipes
F. Yun
L. He
Z. Liliental-Weber
OriginalPaper 01 February 2011 Article: 74
Investigation of Epitaxial GaN Films by Conductive Atomic Force Microscopy
S. Dogan
J. Spradlin
R. Molnar
OriginalPaper 01 February 2011 Article: 73
Large Area 6H- and 4H-SiC Photoconductive Switches
S. Doğan
F. Yun
H. Morkoç
OriginalPaper 01 February 2011 Article: 72
Stimulated Emission at 258 nm in AlN/AlGaN Quantum Wells Grown on Bulk AlN Substrates
R. Gaska
Q. Fareed
L. J. Schowalter
OriginalPaper 01 February 2011 Article: 69
Structural Properties of Free-Standing 50 mm Diameter GaN Wafers with (1010) Orientation Grown on LiAlO₂
Jacek Jasinski
Zuzanna Liliental-Weber
Stephen Brown
OriginalPaper 01 February 2011 Article: 66
First AlGaN Free-Standing Wafers
Yu.V. Melnik
V. A. Soukhoveev
V. A. Dmitriev
OriginalPaper 01 February 2011 Article: 65
High-Speed Solar-Blind AlGaN Schottky Photodiodes
Necmi Biyikli
Ibrahim Kimukin
Ekmel Ozbay
OriginalPaper 01 February 2011 Article: 58
Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes
X. A. Cao
S. F. LeBoeuf
S. D. Arthur
OriginalPaper 01 February 2011 Article: 55
Electron Injection-Induced Effects in GaN: Physics and Applications
Leonid Chernyak
William Burdett
OriginalPaper 01 February 2011 Article: 54
Analysis of Leakage Currents in AlGaN/GaN Current Aperture Vertical Electron Transistors (CAVETs)
Ilan Ben-Yaacov
Yee-Kwang Seck
Umesh K. Mishra
OriginalPaper 01 February 2011 Article: 48
Abnormal Rectifying Characteristics of a Mg Doped GaN Schottky Diode
Jae Wook Kim
Byung Kyu Cho
Phil W. Yu
OriginalPaper 01 February 2011 Article: 47
GaP-based MIS Capacitors Using a SiN Gate Dielectric
A. Chen
J. Woodall
T. P. Ma
OriginalPaper 01 February 2011 Article: 46
Solar Blind (Al,Ga)N Metal-Semiconductor-Metal Devices for High Performance Flame Detection
Mauro Mosca
Jean-Luc Reverchon
Michel Tauvy
OriginalPaper 01 February 2011 Article: 44
Effects of Pre-Process Temperature Stressing on AlGaN/GaN HEMT Structures
Mark J. Yannuzzi
Neil A. Moser
Donald C. Reynolds
OriginalPaper 01 February 2011 Article: 42
Novel Oxides for Passivating AlGaN/GaN HEMT and Providing Low Surface State Densities at Oxide/GaN Interface
F. Ren
B. Luo
Y. Irokawa
OriginalPaper 01 February 2011 Article: 41
Atomic and Electronic Structure of Boron-Doped Diamond Grain Boundaries Studied by Arhvtem and ab-Initio Calculation
Hiroyuki Togawa
Hideki Ichinose
OriginalPaper 01 February 2011 Article: 39

Volume 764, Issue 1

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