Volume 745, Issue 1

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December 2002

Symposium N – Novel Materials and Processes for Advanced CMOS

Issue Editors:

M. I. Gardner,
S. De Gendt,
J. P. Maria,
S. Stemmer

56 articles in this issue

Study of interface formation of (Ba,Sr)TiO₃ thin films grown by rf sputter deposition on bare Si and thermal SiO₂/Si substrates.
N. A. Suvorova
A. H. Mueller
E. A. Irene
OriginalPaper 11 February 2011 Article: 912712
Structural Quality And Electrical Behavior Of Epitaxial High-κ Y₂O₃ / Si(001)
G. Vellianitis
G. Apostolopoulos
J. C. Hooker
OriginalPaper 11 February 2011 Article: 910710
Hrtem Investigation of Effect of Various Rare Earth Oxide Dopants on Epitaxial Zirconia High-K Gate Dielectrics
Takanori Kiguchi
Naoki Wakiya
Nobuyasu Mzutani
OriginalPaper 11 February 2011 Article: 9777
Conduction Mechanisms in SrTiO₃ Thin Films on Silicon
Bogdan Mereu
George Sarau
Marin Alexe
OriginalPaper 11 February 2011 Article: 9575
A study of Al₂O₃:C films on Si(100) grown by low pressure MOCVD
M. P. Singh
C. S. Thakur
S. A. Shivashankar
OriginalPaper 11 February 2011 Article: 9272
Improvement of capacitance-voltage (C-V) characteristics of YSZ/Si(001) and ZrO₂/Si thin film by Nb-doping
Naoki Wakiya
Tomohiko Moriya
Nobuyasu Mizutani
OriginalPaper 11 February 2011 Article: 9171
The Influence of Defects on Compatibility and Yield of the HfO₂-PolySilicon Gate Stack for CMOS Integration
V. S. Kaushik
S. DeGendt
M. Heyns
OriginalPaper 11 February 2011 Article: 8767
Dynamic growth mechanism and interface structure of crystalline zirconia on silicon
S. J. Wang
A. C. H. Huan
C. K. Ong
OriginalPaper 11 February 2011 Article: 8666
Physical and Electrical Characterization of Hafnium Silicate Thin Films
Patrick S. Lysaght
Brendan Foran
Howard R. Huff
OriginalPaper 11 February 2011 Article: 8363
High κ Gate Dielectrics For Si And Compound Semiconductors By Molecular Beam Epitaxy
J. Raynien Kwo
Minghwei Hong
OriginalPaper 11 February 2011 Article: 8161
Oxygen vacancy defects in tantalum pentoxide: a density functional study
R. Ramprasad
Michael Sadd
Mel Miller
OriginalPaper 11 February 2011 Article: 7656
Atomic Structure, Band Offsets and Hydrogen in High K oxide:Silicon interfaces
J. Robertson
P. W. Peacock
OriginalPaper 11 February 2011 Article: 7555
First-principles Study of Electronic and Dielectric Properties of ZrO₂ and HfO₂
Xinyuan Zhao
David Vanderbilt
OriginalPaper 11 February 2011 Article: 7252
First Principles Modeling Of High-K Dielectric Materials
Gyuchang Jun
Kyeongjae Cho
OriginalPaper 11 February 2011 Article: 7151
Copper Diffusion Characteristics in Single Crystal and Polycrystalline TaN
H. Wang
Ashutosh Tiwari
J. Narayan
OriginalPaper 11 February 2011 Article: 611
Effectiveness of Plasma Nitrided Silicon Oxynitride as a Barrier Layer between High k Materials and Si Substrates
Yi Sheng Lai
J. S. Chen
OriginalPaper 11 February 2011 Article: 522
Trap Spectroscopy in Si3N4 Ultrathin Films Using Exoelectron Emission Method
M. Naich
G. Rosenman
Ya Roizin
OriginalPaper 11 February 2011 Article: 521
Interface Quality and Electrical Performance of Low-Temperature Metal Organic Chemical Vapor Deposition Aluminum Oxide Thin Films for Advanced CMOS Gate Dielectric Applications
Spyridon Skordas
Filippos Papadatos
Alain Kaloyeros
OriginalPaper 11 February 2011 Article: 518
Electrical and Structural Characterization of HfO₂ MIM Capacitors
Fan Yang
David E. Kotecki
Michael Call
OriginalPaper 11 February 2011 Article: 516
Growth and Physical Properties of MOCVD-Deposited Hafnium Oxide Films and Their Properties on Silicon
S. Van Elshocht
M. Caymax
M. M. Heyns
OriginalPaper 11 February 2011 Article: 515
Effect of Nature of the Precursor on Crystallinity and Microstructure of MOCVD-Grown ZrO₂ Thin Films
M. S. Dharmaprakash
S. A. Shivashankar
OriginalPaper 11 February 2011 Article: 514
A New Approach for Metal Oxide Film Growth: Vapor-Liquid Hybrid Deposition (VALID)
Tetsuji Yasuda
Ronald Kuse
OriginalPaper 11 February 2011 Article: 512
ALD HfO₂ surface preparation study
Annelies Delabie
M. Caymax
M. M. Heyns
OriginalPaper 11 February 2011 Article: 511
Kinetics of agglomeration of NiSi and NiSi₂ phase formation.
C. Detavernier
A. Özcan
J. M. E. Harper
OriginalPaper 11 February 2011 Article: 412
Nickel, Platinum and Zirconium Germanosilicide Contacts to Heavily Phosphorous Doped Silicon-Germanium Alloys for Advanced CMOS Source/Drain Junctions
Hongxiang Mo
Jing Liu
Mehmet C. Öztürk
OriginalPaper 11 February 2011 Article: 411
Phase Formation in Ti (Ta)-Ni and Co-Ti Films Deposited on (001)Si in N₂ Atmospheres.
A. L. Vasiliev
M. Aindow
A. A. Orlikovsky
OriginalPaper 11 February 2011 Article: 410
Growth Temperature Effects on Deep-Levels in Si Grown by Low Temperature Molecular Beam Epitaxy
Sung Yong Chung
Paul R. Berger
Phillip E. Thompson
OriginalPaper 11 February 2011 Article: 69
Ultrashallow SIMS Study of Implanted Dopants in NiSi/Si(100)
Nikolai L. Yakovlev
Andrew S. W. Wong
Dongzhi Chi
OriginalPaper 11 February 2011 Article: 68
Low Thermal Budget NiSi Films on SiGe Alloys
S. K. Ray
T. N. Adam
J. Kolodzey
OriginalPaper 11 February 2011 Article: 66
Influence of Substrate Temperature During Sputter Deposition on the Subsequent Formation of Titanium Disilicide
A. S. Özcan
K. F. Ludwig Jr
J. M. E. Harper
OriginalPaper 11 February 2011 Article: 64
Characteristics of Ultra Shallow B Implantation with Decaborane
Cheng Li
Maria A. Albano
Marek Sosnowski
OriginalPaper 11 February 2011 Article: 63
Advanced PECVD-Based Anti-Reflective Coating for 90nm Generation Interconnects
Sang H. Ahn
Miguel Fung
Hichem M’Saad
OriginalPaper 11 February 2011 Article: 62
MOCVD of HfO₂ from Alkoxide and Alkylamide Precursors
John L. Roberts
Paul A. Williams
Lesley M. Smith
OriginalPaper 11 February 2011 Article: 59
Oriented Growth of Thin Films of Samarium Oxide by MOCVD
K. Shalini
S. A. Shivashankar
OriginalPaper 11 February 2011 Article: 58
Ultrathin Zirconium Dioxide Chemically Deposited at a Low Thermal Budget
Stefan Harasek
Heinz D. Wanzenboeck
Emmerich Bertagnolli
OriginalPaper 11 February 2011 Article: 57
Physical and Electrical Properties of Al₂O₃, HfO₂, and their Alloy Films Prepared by Atomic Layer Deposition for 65nm CMOS Gate Dielectric
Takaaki Kawahara
Kazuyoshi Torii
Hiroshi Kitajima
OriginalPaper 11 February 2011 Article: 56
Physical-Chemical Evolution upon Thermal Treatments of Al₂O₃, HfO₂ and Al/Hf Composite Materials Deposited by ALCVD™
B. Crivelli
M. Alessandri
F. Zanderigo
OriginalPaper 11 February 2011 Article: 53
Effect of Post-Metallization Hydrogen Annealing on C-V Characteristic of Zirconia Grown Using Atomic Layer Deposition
Arpan Chakraborty
Anil U. Mane
V. Venkataraman
OriginalPaper 11 February 2011 Article: 52
Formation of Ni mono-germanosilicide on heavily B-doped epitaxial SiGe for ultra-shallow source/drain contacts
Christian Isheden
Johan Seger
Mikael Östling
OriginalPaper 11 February 2011 Article: 49
Ni Silicide Formation on Polycrystalline SiGe and SiGeC Layers
Erik Haralson
Tobias Jarmar
Mikael Östling
OriginalPaper 11 February 2011 Article: 48
Strained-Si-on-Insulator (SSOI) and SiGe-on-Insulator (SGOI): Fabrication Obstacles and Solutions
Gianni Taraschi
Arthur J. Pitera
Eugene A. Fitzgerald
OriginalPaper 11 February 2011 Article: 47
SiGe pMOSFETs Fabricated on Limited Area SiGe Virtual Substrates
Andrew Waite
Urs Straube
Evan Parker
OriginalPaper 11 February 2011 Article: 46
2D Dopant Profiling for Advanced Process Control
Xiang Dong Wang
Qianghua Xie
Linda Cross
OriginalPaper 11 February 2011 Article: 43
The Effect of SiGe Barriers on the Thermal Stability of Highly B-Doped Si Surface Layers
Phillip E. Thompson
Joe Bennett
Mark E. Twigg
OriginalPaper 11 February 2011 Article: 41
A Selective Etching Process for Chemically Inert High-k Metal Oxides
Katherine L. Saenger
Harald F. Okorn-Schmidt
Christopher P. D’Emic
OriginalPaper 11 February 2011 Article: 39
Wavelength-Invariant Resist Composed of Bimetallic Layers
Y. Tu
M. Karimi
G. H. Chapman
OriginalPaper 11 February 2011 Article: 38
X-ray absorption studies of high performance Low-k dielectric materials
T. Yoda
H. Miyajima
H. Hashimoto
OriginalPaper 11 February 2011 Article: 37
Characterization of Ruthenium and Ruthenium Oxide Thin Films deposited by Chemical Vapor Deposition for CMOS Gate Electrode Applications
Filippos Papadatos
Spyridon Skordas
Eric Eisenbraun
OriginalPaper 11 February 2011 Article: 33
Measuring The Work Functions Of PVD TaN, TaSiN And TiSiN Films With A Schottky Diode CV Technique For Metal Gate CMOS Applications
James Pan
Christy Woo
Ming Ren Lin
OriginalPaper 11 February 2011 Article: 32
Atomic Layer Deposition of High-k Gate Dielectrics Using MO Precursor and Cyclic Plasma Exposure
Kazuhiko Endo
Toru Tatsumi
OriginalPaper 11 February 2011 Article: 28

Volume 745, Issue 1

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