Volume 742, Issue 1

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December 2002

Symposium K – Silicon Carbide-Materials, Processing, and Devices

Issue Editors:

D. J. Larkin,
S. E. Saddow,
N. S. Saks,
A. Schoener,
M. Showronski

52 articles in this issue

The Effect of Channel Recess and Passivation on 4H-SiC MESFETs
Ho Young Cha
Christopher I. Thomas
Michael G. Spencer
OriginalPaper 01 April 2003 Article: 519
The Effect of Annealing on High-resistivity and Semi-insulating 4H-SiC
S. R. Smith
A. O. Evwaraye
W. C. Mitchel
OriginalPaper 01 April 2003 Article: 516
Photo-Chemical Pattern Etching of Silicon-Carbide by Using Excimer Laser and Hydrogen Peroxide Solution
D. Sasaki
M. Murahara
OriginalPaper 01 April 2003 Article: 515
Transport Mechanisms in Focused Ion Beam Assisted Ohmic Contacts to p-Type 6H-SiC
Agis A. Iliadis
OriginalPaper 01 April 2003 Article: 512
Self-assembled Ge quantum dots on SiC substrates grown by UHV-CVD
C. Calmes
V. Le Thanh
C. Clerc
OriginalPaper 01 April 2003 Article: 220
Thermal Plasma Physical Vapor Deposition of Nanostructured SiC Coatings
Xinhua Wang
Keisuke Eguchi
Toyonobu Yoshida
OriginalPaper 01 April 2003 Article: 219
Thermal stress as the major factor of defect generation in SiC during PVT growth
D. I. Cherednichenko
R. V. Drachev
T. S. Sudarshan
OriginalPaper 01 April 2003 Article: 218
Whole-Wafer Optical Mapping of Defects in Insulating Silicon Carbide Wafers
Millard G. Mier
John J. Boeckl
Matthew P. Nelson
OriginalPaper 01 April 2003 Article: 216
Spectroscopic Properties of Cubic SiC on Si
Z. C. Feng
D. N. Talwar
I. Ferguson
OriginalPaper 01 April 2003 Article: 214
<0001> channeling stopping power of MeV He⁺ ions in 4H- and 6H-SiC.
Roberta Nipoti
Fabrice Letertre
OriginalPaper 01 April 2003 Article: 212
Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them
Balaji Raghothamachar
Jie Bai
Stephen E. Saddow
OriginalPaper 01 April 2003 Article: 211
A New Process for the Fabrication of SiC Power Devices and Systems on SiCOI (Silicon Carbide On Insulator) Substrates
François Templier
Nicolas Daval
Thierry Billon
OriginalPaper 01 April 2003 Article: 79
Fabrication and Measurement of 4H-Silicon Carbide Avalanche Photodiodes
Kent Burr
Peter Sandvik
Kevin Matocha
OriginalPaper 01 April 2003 Article: 78
7 kV 4H-SiC GTO Thyristors
Stephen Van Campen
Andris Ezis
Todd Hansen
OriginalPaper 01 April 2003 Article: 77
Towards Ferroelectric Field Effect Transistors in 4H-Silicon Carbide
S. M. Koo
S. I. Khartsev
M. Östling
OriginalPaper 01 April 2003 Article: 76
Influence of Interface States on High Temperature SiC Sensors and Electronics
Ruby N. Ghosh
Peter Tobias
Brage Golding
OriginalPaper 01 April 2003 Article: 75
Electrical Instability Suppression in 4H-SiC Power MESFETs
J. B. Tucker
R. A. Beaupre
B. Edward
OriginalPaper 01 April 2003 Article: 74
SiC BJT’s for High Power Switching and RF Applications
Anant Agarwal
Sei Hyung Ryu
Ken Brewer
OriginalPaper 01 April 2003 Article: 73
System Design Considerations for Optimizing the Benefit by Unipolar SiC Power Devices.
Roland Rupp
Ilia Zverev
OriginalPaper 01 April 2003 Article: 71
Strained SiC: Ge Layers in 4H SiC formed by Ge Implantation
M. W. Dashiell
G. Xuan
J. Kolodzey
OriginalPaper 01 April 2003 Article: 67
Porous SiC – Prospective Applications (Invited)
Marina Mynbaeva
OriginalPaper 01 April 2003 Article: 66
Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.
Roberta Nipoti
Francesco Moscatelli
Jean Pierre Chante
OriginalPaper 01 April 2003 Article: 62
Aluminum and boron diffusion in 4H-SiC
M. K. Linnarsson
M. S. Janson
B. G. Svensson
OriginalPaper 01 April 2003 Article: 61
Homoepitaxial 4H-SiC films grown by microwave plasma chemical vapor deposition
Mitsuo Okamoto
Ryoji Kosugi
Kazuo Arai
OriginalPaper 01 April 2003 Article: 56
Characterization of a Ceramic-Metal-Ceramic Bond: Chemical Vapor Deposited (CVD) Silicon Carbide Joined by a Silver-Based Active Brazing Alloy (ABA)
James V. Marzik
Toshi Oyama
William J. Croft
OriginalPaper 01 April 2003 Article: 55
Modeling the crystal growth of cubic silicon carbide by molecular dynamics simulations
Nicoletta Resta
Christopher Kohler
Hans Rainer Trebin
OriginalPaper 01 April 2003 Article: 53
Confinement of Screw Dislocations to Predetermined Lateral Positions in (0001) 4H-SiC Epilayers Using Homoepitaxial Web Growth
Philip G. Neudeck
David J. Spry
Glenn M. Beheim
OriginalPaper 01 April 2003 Article: 52
A semi-empirical model for electron mobility at the SiC/SiO₂ interface
Nelson S. Saks
OriginalPaper 01 April 2003 Article: 48
Afterglow Thermal Oxidation of Silicon Carbide
Andrew M. Hoff
Arti Tibrewala
Stephen E. Saddow
OriginalPaper 01 April 2003 Article: 47
SiO₂/SiC Interface Properties on Various Surface Orientations
Hiroshi Yano
Taichi Hirao
Hiroyuki Matsunami
OriginalPaper 01 April 2003 Article: 45
Experimental Studies and Thermodynamic Modeling of the Interaction of O₂ with SiC
Y. Song
F. W. Smith
OriginalPaper 01 April 2003 Article: 44
Accurate Lattice Constant and Mismatch Measurements of SiC Heterostructures by X-Ray Multiple-Order Reflections
XianRong Huang
Michael Dudley
J. Anthony Powell
OriginalPaper 01 April 2003 Article: 38
Extended Defects in 4H-SiC PiN Diodes
M. E. Twigg
R. E. Stahlbush
S. Wang
OriginalPaper 01 April 2003 Article: 37
Process Induced Extended Defects in SiC Grown via Sublimation
R. Yakimova
M. Syväjärvi
J. Stoemenos
OriginalPaper 01 April 2003 Article: 35
Effects of Structural Defects on Diode Properties in 4H-SiC
B. J. Skromme
K. C. Palle
T. Gehoski
OriginalPaper 01 April 2003 Article: 34
Ion Implantation Induced Deep Defects in n-type 4H-Silicon Carbide
A. O. Evwaraye
S. R. Smith
M. A. Capano
OriginalPaper 01 April 2003 Article: 33
Hall Scattering Factor of Holes and Shallow Defect Centers in Aluminum-doped SiC
Gerhard Pensl
Florin Ciobanu
Adolf Schöner
OriginalPaper 01 April 2003 Article: 32
Four Current Examples of Characterization of Silicon Carbide
S. Bai
Yue Ke
L. M. Porter
OriginalPaper 01 April 2003 Article: 31
Spatially Resolved Photoluminescence and Thermally Stimulated Luminescence in Semi-Insulating SiC Wafers
Yu M. Suleimanov
S. Lulu
M. F. MacMillan
OriginalPaper 01 April 2003 Article: 29
Field Enhancement Mechanisms and Electron Field Emission Properties of Ion Beam Synthesized and Modified SiC/Si Heterostructures
W. M. Tsang
S. P. Wong
J. K. N. Lindner
OriginalPaper 01 April 2003 Article: 27
SiC TO SiC WAFER BONDING
G. N. Yushin
A. V. Kvit
Z. Sitar
OriginalPaper 01 April 2003 Article: 25
Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic Structures
Spyros Gallis
Ulrike Futschik
Costas G. Fountzoulas
OriginalPaper 01 April 2003 Article: 24
Memory Switching in Ion Bombarded Amorphous Silicon Carbide Thin Film Devices
R. G. Gateru
J. M. Shannon
S. R. P. Silva
OriginalPaper 01 April 2003 Article: 23
Radial distribution functions of amorphous silicon carbide
Manabu Ishimaru
In Tae Bae
Yoshihiko Hirotsu
OriginalPaper 01 April 2003 Article: 22
Ion dose dependence on solid phase epitaxy of amorphous silicon carbide induced by ion implantation
In Tae Bae
Manabu Ishimaru
Yoshihiko Hirotsu
OriginalPaper 01 April 2003 Article: 21
Growth of Columnar SiC on Patterned Si Substrates by CVD
Shigehiro Nishino
Yoichi Okui
Chacko Jacob
OriginalPaper 01 April 2003 Article: 17
3C-SiC Monocrystals Grown on Undulant Si(001) Substrates
Hiroyuki Nagasawa
Kuniaki Yagi
Naoki Hatta
OriginalPaper 01 April 2003 Article: 16
Reconstruction and Epitaxial Adlayers on SiC Surfaces: Structural Significance for Technological Applications
U. Starke
OriginalPaper 01 April 2003 Article: 15
Epitaxial silicon carbide simulations vs. experiments: etching, growth rates and aluminum/nitrogen doping
Jérôme Mézière
Elisabeth Blanquet
Thierry Billon
OriginalPaper 01 April 2003 Article: 14
Modeling Analysis of Free-Spreading Sublimation Growth of SiC Crystals
M. V. Bogdanov
S. E. Demina
H. Helava
OriginalPaper 01 April 2003 Article: 13

Volume 742, Issue 1

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