Volume 732, Issue 1 | MRS Online Proceedings Library

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Volume 732, Issue 1

December 2002

Symposium I — Chemical-Mechanical Planarization

Issue Editors:

S. V. Babu,
R. Singh,
N. Hayasaka,
M. Oliver

20 articles in this issue

Optimization of Deposition Thickness and Over Polishing Time to Minimize Wafer Level Topography in Copper CMP
J. M. Kang
Shaoyu Wu
P. D. Foo
OriginalPaper 01 February 2011 Article: 413
Pattern density effects in fixed abrasive polishing
Rajasekhar Venigalla
Laertis Economikos
S. V. Babu
OriginalPaper 01 February 2011 Article: 123
Study of Defect Generated During Cu/Black Diamond CMP Process
Shaoyu Wu
Ning Li
P. D. Foo
OriginalPaper 01 February 2011 Article: 56
Analysis of Local Planarization with Polishing Time, Film Thickness, Chemical Non-Uniformity, Line Density, Line Width, and Pad Relaxation Property
Jinru Bian
John Quanci
OriginalPaper 01 February 2011 Article: 55
Effect of CMP Pad Exposure to Aqueous Media on the Pad Properties. Part 1. Dynamic Mechanical and Modulated DSC Analysis
A. Tregub
M. Moinpour
J. Sorooshian
OriginalPaper 01 February 2011 Article: 54
Pad Conditioning and Pad Surface Characterization in Oxide Chemical Mechanical Polishing
A. Scott Lawing
OriginalPaper 01 February 2011 Article: 53
Simulation of Nanoscale Polishing of Copper with Molecular Dynamics
Y. Ye
R. Biswas
A. Chandra
OriginalPaper 01 February 2011 Article: 48
Topography Reduction During Barrier CMP Improved Due to Tantalum Oxidation
Paul Lefevre
Katsuyoshi Ina
Scott Rader
OriginalPaper 01 February 2011 Article: 45
Mechanistic Understanding of Material Detachment During CMP Processing
Wei Che
Yongjin Guo
Abhijit Chandra
OriginalPaper 01 February 2011 Article: 43
Evaluation of Monodispersed Silica Particles and Ceria Coated Silica Particles for Chemical Mechanical Polishing
Zhenyu Lu
Seung-Ho Lee
S. V. Babu
OriginalPaper 01 February 2011 Article: 37
Mixed Abrasive CMP: A Study on Metal and Dielectric Films
Anurag Jindal
Sharath Hegde
S. V. Babu
OriginalPaper 01 February 2011 Article: 36
Engineering the Interaction Forces to Optimize CMP Performance
G. B. Basim
I. Vakarelski
B. M. Moudgil
OriginalPaper 01 February 2011 Article: 35
New Slurry Formulation for Copper-CMP Process in a Damascene Integration Scheme
Valentina L. Terzieva
Bram M. Sijmus
Gerd Passing
OriginalPaper 01 February 2011 Article: 34
Removal of TaN/Ta Barrier with Variable Selectivity to Copper and TEOS
Jinru Bian
John Quanci
Matthew VanHanehem
OriginalPaper 01 February 2011 Article: 32
Silver Damascene Process with Cap Layer
Masahiro Ota
Manabu Tsujimura
Masahiro Miyata
OriginalPaper 01 February 2011 Article: 31
Evaluation of the Chemical-mechanical Planarization (CMP) Performance of Silicon Nitride and Silicon Carbide as Hard Mask Materials for Cu-based Interconnect Technology
Wei-Tsu Tseng
Jia Lee
Ronald Goldblatt
OriginalPaper 01 February 2011 Article: 17
Modeling and Mapping of Nanotopography Interactions with CMP
Brian Lee
Duane S. Boning
John Valley
OriginalPaper 01 February 2011 Article: 15
Performance Comparisons of Abrasive Containing and Abrasive Free Slurries for Copper Low-k CMP
John Nguyen
Gerald Martin
Somit Joshi
OriginalPaper 01 February 2011 Article: 14
Development of “New Abrasive-Free Copper CMP Solutions” BASED on Electrochemical and Film Analysis Method
Jin Amanokura
Yasuo Kamigata
Masanobu Hanazono
OriginalPaper 01 February 2011 Article: 12
Comparison and Evolution of Copper CMP Consumable Technology
David R. Evans
OriginalPaper 01 February 2011 Article: 11