Volume 719, Issue 1 | MRS Online Proceedings Library

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Volume 719, Issue 1

December 2001

Symposium F — Defect- and Impurity-Engineered Semiconductors and Devices III

Issue Editors:

S. Ashok,
J. Chevallier,
N. M. Johnsonn,
H. Okushi,
B. L. Sopori

72 articles in this issue

Analysis of Cu traces in Si using Transient Ion Drift combined with Rapid Thermal Annealing.
T. Heiser
A. Belayachi
B. Semmache
OriginalPaper 01 February 2011 Article: 1312
Self- and Dopant Diffusion in Extrinsic Boron Doped Isotopically Controlled Silicon Multilayer Structures
Ian D. Sharp
Hartmut A. Bracht
Eugene E. Haller
OriginalPaper 01 February 2011 Article: 1311
Dopant and Self-Diffusion in Extrinsic n-Type Silicon Isotopically Controlled Heterostructures
Hughes H. Silvestri
Ian D. Sharp
Eugene E. Haller
OriginalPaper 01 February 2011 Article: 1310
Low-Temperature Properties of Compensated Ge Films Used for Cryogenic Thermometers
V. F. Mitin
V. V. Kholevchuk
M. Vieira
OriginalPaper 01 February 2011 Article: 843
Study of Er-related Defects in a-Si∶H(Er) Films Used in Light Emitting Heterostructures
A. Nazarov
Ja. Vovk
S. Ashok
OriginalPaper 01 February 2011 Article: 842
The Elimination of Ion Implantation Damage at the Source/Drain Junction of Poly-Si TFTs
Sang-Hoon Jung
Min-Cheol Lee
Min-Koo Han
OriginalPaper 01 February 2011 Article: 841
The role of interfaces in thin-film CdTe solar cells
M. J. Romero
T. A. Gessert
H. R. Moutinho
OriginalPaper 01 February 2011 Article: 840
The Strain relaxation and dislocation density of SiGe films in micron size window with different mask material grown by MBE
Xiang-jiu Zhang
Hui Xiong
Yuerui Chen
OriginalPaper 01 February 2011 Article: 839
Modeling Growth Directional Features of Silicon Nanowires Obtained Using SiO
T. Y. Tan
S. T. Lee
U. Gösele
OriginalPaper 01 February 2011 Article: 838
First-Principles Simulation of Hydrogen Interaction in Amorphous Silicon Nitride
Peter Kroll
OriginalPaper 01 February 2011 Article: 837
An Study of Influence of Imperfections on the Delamination of Diamond-Like Carbon Films
Myoung-Woon Moon
Kyang-Ryel Lee
Kyu Hwan Oh
OriginalPaper 01 February 2011 Article: 836
Laser Engineering of Barrier Structures Based on Solid Solution ZnCdHgTe
Galina Khlyap
OriginalPaper 01 February 2011 Article: 835
Perturbation of Copper Substitutional Defect Concentrations in CdS/CdTe Heterojunction Solar Cell Devices
D. Albin
R. Dhere
S. Asher
OriginalPaper 01 February 2011 Article: 834
Control of Valence States for ZnO and ZnS with a Wide-Band Gap by a Codoping Method
T. Yamamoto
OriginalPaper 01 February 2011 Article: 833
Behavior of copper in CdGeAs₂ crystals
Valeriy G. Voevodin
Olga V. Voevodina
Nils C. Fernelius
OriginalPaper 01 February 2011 Article: 832
Native Defect Formation and Ionization Energies in Cadmium Telluride
John E. Jaffe
Mary Bliss
OriginalPaper 01 February 2011 Article: 831
Raman Scattering Spectra in Be-Implanted GaN Epilayers
L. S. Wang
W. H. Sun
S. J. Chua
OriginalPaper 01 February 2011 Article: 828
Comparative Investigation of Photoluminescence of In- and Si- doped GaN/AlGaN Multi-Quantum Wells
W. H. Sun
L. S. Wang
S. J. Chua
OriginalPaper 01 February 2011 Article: 826
The Effect of Defects and Dopants on Thermal Conduction in GaN Films
J. Zou
D. Kotchetkov
F. H. Pollak
OriginalPaper 01 February 2011 Article: 825
Probing the Al_xGa_1−xN Atomic Distribution via UV-Photoluminescence and Raman at Sub-νm Scale
Leah Bergman
Xiang-Bai Chen
Robert F. Davis
OriginalPaper 01 February 2011 Article: 823
Correlation of Surface Morphologies with Mn Compositions of Ga_1−xMn_xAs Epilayers Grown by Liquid Phase Epitaxy
Hwa-Mok Kim
Jae-Hyeon Leem
Tae-Won Kang
OriginalPaper 01 February 2011 Article: 822
Comparative Analysis of MBE-grown GaN Films on SiC, ZnO and LiGaO₂ Substrates
F. Yun
M. A. Reshchikov
C. W. Litton
OriginalPaper 01 February 2011 Article: 821
Influences of Lattice Sinks and Defect Interactions on Solutes in Compounds
Gary S. Collins
Matthew O. Zacate
OriginalPaper 01 February 2011 Article: 819
Optical Methods for Defect Characterization in Light-Ion Implanted Silicon Carbide
Claudiu I. Muntele
Iulia C. Muntele
Dale K. Hensley
OriginalPaper 01 February 2011 Article: 817
Characterization of SiC Implanted with B or Al Using Thermal Admittance Spectroscopy
S. R. Smith
M. A. Capano
A. O. Evwaraye
OriginalPaper 01 February 2011 Article: 816
Raman and optical absorption studies of silicon carbide structure damage by ion implantation
Claudiu I. Muntele
Iulia C. Muntele
Dale K. Hensley
OriginalPaper 01 February 2011 Article: 815
Influence of substrate surface morphology on defect generation during silicon carbide single crystal growth
Myung Yoon Um
Jae Kyeong Jeong
Hyeong Joon Kim
OriginalPaper 01 February 2011 Article: 812
Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1 1̄00>
Masashi Kato
Masaya Ichimura
Shigehiro Nishino
OriginalPaper 01 February 2011 Article: 811
Formation and Properties of Three Copper Pairs in Silicon
S. K. Estreicher
D. West
J. Weber
OriginalPaper 01 February 2011 Article: 139
Comparative Study of trap levels observed in undoped and Si-doped GaN
C. B. Soh
D. Z. Chi
S. J. Chua
OriginalPaper 01 February 2011 Article: 135
Injection of point defects by oxidation of AlGaAs
Danielle R. Chamberlin
Scott A. McHugo
S. Jeffrey Rosner
OriginalPaper 01 February 2011 Article: 134
Comparison of deep level spectra of MBE- and MOCVD-grown InGaAsN
R. J. Kaplar
S. A. Ringel
J. F. Klem
OriginalPaper 01 February 2011 Article: 133
Roughness of electronic interfaces in GaAs p-n multilayers investigated by cross-sectional scanning tunneling microscopy
N. D. Jäger
K. Urban
Ph. Ebert
OriginalPaper 01 February 2011 Article: 124
Charges and Dipoles at Semiconductor Interfaces
Raymond T. Tung
OriginalPaper 01 February 2011 Article: 121
Defect Accumulation and Recovery in Ion-Implanted 6H−SiC
W. Jiang
W. J. Weber
C. M. Wangxya
OriginalPaper 01 February 2011 Article: 113
Dose Rate and Temperature Dependence of Ion-Beam-Induced Defect Evolution in Si and SiC
M. Posselt
L. Bischoff
A. Ster
OriginalPaper 01 February 2011 Article: 112
Electrical Signature of Ion-Implantation Induced Defects in n-Silicon in the Defect Cluster Regime Studied using DLTS and Isothermal Transient Spectroscopies
Samarendra P. Singh
Vineet Rao
S. Ashok
OriginalPaper 01 February 2011 Article: 111
Incorporation of Highly Concentrated Iron Impurities in InP by High Temperature Ion Implantation
T. Cesca
A. Gasparotto
C. Bocchi
OriginalPaper 01 February 2011 Article: 102
Electron-beam-induced reactivation of Si dopants in hydrogenated and deuterated 2D AlGaAs heterostructures. Application to the fabrication of nanostructures
L. Kurowski
S. Silvestre
M. Constant
OriginalPaper 01 February 2011 Article: 98
Hydrogen Platelet Layer in Silicon Formed from Hydrogen Trapped onto Microbubbles of Gases
A. Y. Usenko
W. N. Carr
Bo Chen
OriginalPaper 01 February 2011 Article: 96
Doping of Oxidized Float Zone Silicon by Thermal Donors — A Low Thermal Budget Doping Method for Device Applications?
R. Job
A. G. Ulyashin
G. Tonelli
OriginalPaper 01 February 2011 Article: 95
Photoluminescence and Infrared Absorption Study of Isoelectronic Impurity Passivation by Hydrogen
M. Capizzi
A. Polimeni
W. K. Ge
OriginalPaper 01 February 2011 Article: 94
Effects of Hydrogen on the Deep Levels in Si, ZnO and Diamond Studied by Cathodoluminescence
Takashi Sekiguchi
OriginalPaper 01 February 2011 Article: 92
Photo-induced Dissociation and Optical Cross Section of Si−H and S−H Complexes in GaAs and AlGaAs
M. Barbé
F. Bailly
M. Constant
OriginalPaper 01 February 2011 Article: 88
Partial annealing of defects in boron-implanted p-type silicon by hydrogen implantation
Yutaka Tokuda
Hiroyuki Iwata
OriginalPaper 01 February 2011 Article: 86
Evolution of nucleation sites and bubble precursors in silicon as a function of helium implanted dose
Changlong Liu
R. Delamare
A. Van Veen
OriginalPaper 01 February 2011 Article: 85
Carrier dynamics in spatially ordered InAs quantum dots
Jörg Siegert
Saulius Marcinkevièius
Yong-Hang Zhang
OriginalPaper 01 February 2011 Article: 78
Comparative Raman and Transmission Electron Microscopy Analysis of the Evolution of Platelet Defects in Plasma Hydrogenated and Annealed Czochralski Silicon
R. Job
M. F. Beaufort
W. R. Fahrner
OriginalPaper 01 February 2011 Article: 74
Functional voids by gas ion implantation for applications in semiconductor processing
V. Raineri
E. Rimini
OriginalPaper 01 February 2011 Article: 71
Thermal Evolution of Deuterium in 4H−SiC
R. Delamare
E. Ntsoenzok
Ch. Dubois
OriginalPaper 01 February 2011 Article: 71