Volume 716, Issue 1 | MRS Online Proceedings Library

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Volume 716, Issue 1

December 2001

Symposium B — Silicon Materials-Processing, Characterization, and Reliability

Issue Editors:

P. Ho,
V. Misra,
D. L. O’Meara,
J. Veteran

101 articles in this issue

Nanoindentation of Silicate Low-K Dielectric Thin Films
Joseph B. Vella
Alex A. Volinsky
William W. Gerberich
OriginalPaper 01 February 2011 Article: 1213
Interfacial Adhesion Study of Porous Low-K Dielectrics to CVD Barrier Layers
Jeffrey A. Lee
Jeffrey T. Wetzel
Paul S. Ho
OriginalPaper 01 February 2011 Article: 1212
Evaluation of Contact and Via Step Coverage Using a Novel Two-Step Titanium Nitride Barrier Deposition Process
Ardy Sidhwa
Chuck Spinner
Richard Ulrich
OriginalPaper 01 February 2011 Article: 1210
Post Blast Component Cleaning Techniques to Reduce Particle Generation in Etch and Deposition Chambers
Ronald Burgess
Dave Laube
Jerome Vetier
OriginalPaper 01 February 2011 Article: 1121
The Effect of the Microstructure of Diffusion Barriers on the Palladium Activation for Electroless Copper Deposition
Seok Woo Hong
Yong Sun Lee
Jong-Wan Park
OriginalPaper 01 February 2011 Article: 1120
Dry Patterning of Cu(Mg) Alloy Films Using a Self-Aligned MgO Mask In an Oxygen Plasma Plus H(hfac) Chemistry
Heejung Yang
Yeonkyu Ko
Jaegab Lee
OriginalPaper 01 February 2011 Article: 1119
Effects of Borophosphosilicate Glass Dopant Concentrations on Isotropic Etch Profile
Chris Gibson
Bradley Williams
Stacey Evans
OriginalPaper 01 February 2011 Article: 1117
Near-Field Ultrasonic Imaging: A Novel Method for Nondestructive Mechanical Imaging of IC Interconnect Structures
G. S. Shekhawat
H. Xie
R. E. Geer
OriginalPaper 01 February 2011 Article: 1114
Solution-Based Precursor Delivery for Copper CVD
Lidong Wang
Gregory L. Griffin
OriginalPaper 01 February 2011 Article: 1112
Periodic Heating in SLSI
Kal. Renganathan Sharma
OriginalPaper 01 February 2011 Article: 1110
Experimental Characterization of the Reliability of 3-Terminal Dual-Damascene Copper Interconnect Trees
C. L. Gan
C. V. Thompson
S. P. Hau-Riege
OriginalPaper 01 February 2011 Article: 813
Effect of Ion-Accelerated Plasma Hydrogenation and Thermal Treatments on Hydrogen Silsesquioxane (HSQ) Low-K Dielectric Films
R. Jeyakumar
L. Ren
S. Sivoththaman
OriginalPaper 01 February 2011 Article: 724
Synthesis and Characterization of Methyltriethoxysilane Based Low Permittivity (Low-k) Polymeric Dielectrics
Z. Gu
R. Jeyakumar
A. Nathan
OriginalPaper 01 February 2011 Article: 723
Polarity Dependence of Degradation in Ultra Thin Oxide and JVD Nitride Gate Dielectrics
Yatin Mutha
K. N. Manjularani
V.Ramgopal Rao
OriginalPaper 01 February 2011 Article: 722
Surface Properties of Low-k Hybrid-Organic-Siloxane-Polymer (HOSP) Films Etched with Ions of Different Incident Angles in CHF₃ Plasma
Sung-Wook Hwang
Gyeo-Re Lee
Jin Woong Kim
OriginalPaper 01 February 2011 Article: 721
Study of Porous Silica Based Films as Low-k Dielectric Material and their Interface with Copper Metallization
Ilanit Fisher
Wayne D. Kaplan
Timothy Weidman
OriginalPaper 01 February 2011 Article: 720
Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation
Alok Nandini
U. Roy
T. M. Lu
OriginalPaper 01 February 2011 Article: 719
Strength-porosity relationship of nanoporous MSSQ films characterised by Brillouin Light Scattering and Surface Acoustic Wave Spectroscopy
C. M. Flannery
T. Wittkowski
M. R. Baklanov
OriginalPaper 01 February 2011 Article: 717
Characterization of Polysiloxane Modified Polysilsesquioxane Films for Low Dielectric Applications: Microstructure, Electrical Properties and Mechanical Properties
Jingyu Hyeon-Lee
Yi Yeol Lyu
Sang Youl Kim
OriginalPaper 01 February 2011 Article: 715
Challenges in Etching of OSG Low- K Materials for Dual-Damascene Metallization
Vladimir N. Bliznetsov
Moitreyee Mukherjee-Roy
Yew Wee Chuan
OriginalPaper 01 February 2011 Article: 713
Development of Spin-on Pre Metal Dielectrics (PMD) for 0.10UM Design Rule and Beyond
Zhongtao Li
Xiaobing Zhou
Eric Moyer
OriginalPaper 01 February 2011 Article: 710
Control of a Metal-Electrode Work Function by Solid-State Diffusion of Nitrogen
R. J. P. Lander
J. C. Hooker
R. A. M. Wolter
OriginalPaper 01 February 2011 Article: 511
Grazing-angle Incidence X-ray Diffraction by the Si_{1-α(x)-β(x)}Ge_β(x)C_β(x)/Si Heterojunction where the Germanium and the Carbon Concentrations are Periodically Varying along the Flat Layer Surface
Hayk H. Bezirganyan Jr
Siranush E. Bezirganyan
Petros H. Bezirganyan Jr
OriginalPaper 01 February 2011 Article: 431
Dopant Profile in Silicon Processing
Kal. Renganathan Sharma
OriginalPaper 01 February 2011 Article: 430
Electrical Characterization of SIMOX SOI Wafers with MOSOS C-V Measurements
C. L. Li
Y. H. Yu
Z. X. Lin
OriginalPaper 01 February 2011 Article: 429
Evolution of Sputtered HfO₂ Thin Films Upon Annealing
S. Nam
S. W. Nam
Siyoung Choi
OriginalPaper 01 February 2011 Article: 425
Effective Dielectric Thickness Scaling for High-K Gate Dielectric Mosfets
Krishna Kumar Bhuwalka
Nihar R. Mohapatra
V. Ramgopal Rao
OriginalPaper 01 February 2011 Article: 419
Degradation Study of Ultra-thin JVD Silicon Nitride Mnsfets
K. N. ManjulaRani
V. Ramgopal Rao
J. Vasi
OriginalPaper 01 February 2011 Article: 418
Characteristics of Silicon Implanted Trap Memory in Oxide-Nitride-Oxide Structure
T. S. Kalkur
Nathaniel Peachey
Tom Moss III
OriginalPaper 01 February 2011 Article: 417
Effects of Poly-Si Annealing on Gate Oxide Charging Damage in Poly-Si Gate Etching Process
Daniel Chong
Won Jong Yoo
Alex See
OriginalPaper 01 February 2011 Article: 416
Composite X-ray Waveguide-Resonator as a Background for the New Generation of the Material Testing Equipment for Films on Si Substrates
V. K. Egorov
E. V. Egorov
OriginalPaper 01 February 2011 Article: 415
On the Argon Annealing-Based Improvements of the Properties of Ultra-Thin Oxynitrides Nitrided with NH₃
Anindya Dasgupta
Christos G. Takoudis
Greg Martel
OriginalPaper 01 February 2011 Article: 410
Metrology Study of Sub 20Å Oxynitride by Corona-Oxide-Silicon (COS) and Conventional C-V Approaches
Pui Yee Hung
George A. Brown
Alain Diebold
OriginalPaper 01 February 2011 Article: 212
High Purity Silicon Amido Precursors for Low Temperature Cvd of High к Gate Silicates
A. S. Borovik
C. Xu
T. H. Baum
OriginalPaper 01 February 2011 Article: 211
Ultrathin Si₃N₄ Films Deposited From Dichlorosilane For Gate Dielectrics Using Single-Wafer Hot-Wall Rapid Thermal CVD
Yoshihide Senzaki
Yakov Brichko
Joseph Sisson
OriginalPaper 01 February 2011 Article: 210
Mechanical-Stress-Controlled Silicide Interconnections for Highly Reliable Semiconductor Devices
Hiromi Shimazu
Hideo Miura
OriginalPaper 01 February 2011 Article: 135
Effect of Metallic Contamination on Interface Properties and Oxide Reliability
Elena Oborina
Scott Campbell
Darrell Simpson
OriginalPaper 01 February 2011 Article: 134
EBIC and XTEM Analysis of High Voltage SMOS Reliability Failures
Larry Rice
OriginalPaper 01 February 2011 Article: 132
Techniques for Localization of IC Interconnection Defects
Edward I. Cole Jr
OriginalPaper 01 February 2011 Article: 131
Electromigration in Submicron Dual-damascene Cu/low-k Interconnects
Ki-Don Lee
Xia Lu
Paul S. Ho
OriginalPaper 01 February 2011 Article: 129
Thermal Stability Studies on 1, 3, 5, 7 - Tetramethylcyclotetra-Siloxane(TMCTS), a Low к CVD Precursor
C. Xu
A. S. Borovik
T. H. Baum
OriginalPaper 01 February 2011 Article: 128
Novel Periodic Nanoporous Silicate Glass With High Structural Stability as Low-k Thin Film
Yoshiaki Oku
Norikazu Nishiyama
Takamaro Kikkawa
OriginalPaper 01 February 2011 Article: 126
A New Approach of Thin-Film X-Ray Diffraction / Scattering Analysis for Ultra-Low-k Dielectrics with Periodic Pore Structures
N. Hata
Y. Oku
T. Kikkawa
OriginalPaper 01 February 2011 Article: 125
A New Ultra-Low K ILD Material Based On Organic-Inorganic Hybrid Resins
Ben Zhong
Herman Meynen
Karen Maex
OriginalPaper 01 February 2011 Article: 124
Characteristics of low-k and ultralow-k PECVD deposited SiCOH films.
A. Grill
V. Patel
M. R. Baklanov
OriginalPaper 01 February 2011 Article: 123
A Correlation Study of Thermal Stability on Porous Low k
Y. F. Chow
T. H. Foo
P. D. Foo
OriginalPaper 01 February 2011 Article: 122
Phenomenological and Elementary Reaction Analysis of Poly-crystalline Silicon CVD Process
Ryosuke Shimizu
Tadashi Januma
Yukihiro Shimogaki
OriginalPaper 01 February 2011 Article: 119
New Technologies for Solar Grade Silicon Production
Sergey M. Karabanov
OriginalPaper 01 February 2011 Article: 118
Electronic Transport Across Porous/Crystalline Silicon Heterojunctions
Md. N. Islam
Sanjay K. Ram
Satyendra Kumar
OriginalPaper 01 February 2011 Article: 117
The Use of C-V Techniques To Investigate Instability Mechanisms in M-I-S Structures
S. Paul
W. I. Milne
J. Robertson
OriginalPaper 01 February 2011 Article: 114