Volume 68, Issue 1

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December 1986

Symposium C — Plasma Processing

Issue Editors:

J. Coburn,
R. A. Gottscho,
D. W. Hess

57 articles in this issue

Considerations in Plasma Pattern Transfer Process Development
G. K. Herb
OriginalPaper 28 February 2011 Pages: 3 - 14
A Mechanistic Study of CC12F2/02 RIE for Bipolar Trench Isolation
David A. Danner
Edward J. Petrillo
Michael R. Polcari
OriginalPaper 28 February 2011 Pages: 15 - 20
Plasma Mode Trench Etching with Direct Hydrocarbon Injection
Steven D. Leeke
David Kuan Yu Liu
James P. McVittie
OriginalPaper 28 February 2011 Pages: 21 - 27
Single Wafer, Anisotropic Etching of Polysilicon with C12/SF6 and Trielectrode Reactor Operation
James E. Nulty
OriginalPaper 28 February 2011 Pages: 29 - 34
Plasma Processing in Semiconductor Manufacturing
Clarence J. Tracy
OriginalPaper 28 February 2011 Pages: 35 - 46
Reactive Ion Etching of WSi_0.6 Gates for GaAs MESFETS
C. L. Lin
Peter D. Hoh
OriginalPaper 28 February 2011 Pages: 47 - 52
Magnetron Enhanced Reactive Ion Etching in a Hexode System
Scott Bell
Thios Bril
OriginalPaper 28 February 2011 Pages: 53 - 58
Anisotropic Dry Etching of Aluminum Films Deposited on Topographic Steps
Jer-shen Maa
Bernard Halon
OriginalPaper 28 February 2011 Pages: 59 - 64
Reactive Ion Etching of Molybdenum in CF₄/O₂ Plasma
Seong-Ju Park
C. P. Sun
N. Metropoulos
OriginalPaper 28 February 2011 Pages: 65 - 70
The Etch Mechanism for Al₂O₃ in Fluorine and Chlorine Based RF Dry Etch Plasmas
W. G. M. Van Den Hoek
OriginalPaper 28 February 2011 Pages: 71 - 78
Plasma Assisted Oxidation of Si at Temperatures Below 800°C
C. K. Williams
A. Reisman
OriginalPaper 28 February 2011 Pages: 79 - 84
RF and Microwave Plasma Deposition of Polymer Films: Effect of Frequency
R. Claude
M. Moisan
M. R. Wertheimer
OriginalPaper 28 February 2011 Pages: 85 - 91
Optical Diagnostic Studies in Plasmas and Plasma Processing
V. M. Donnelly
OriginalPaper 28 February 2011 Pages: 95 - 107
Energy Distribution of Ions in Plasma Etching Reactors
P. Briaud
G. Turban
B. Grolleau
OriginalPaper 28 February 2011 Pages: 109 - 114
Concentration Measurements of Chlorine Atoms in a Plasma Reactor
Joda Wormhoudt
Alan C. Stanton
Herbert H. Sawin
OriginalPaper 28 February 2011 Pages: 115 - 120
Measurement of Particle Densities and Sizes: Application to Silane/Argon Plasmas
Kenneth G. Spears
Timothy J. Robinson
OriginalPaper 28 February 2011 Pages: 121 - 126
Spectroscopic Diagnostics and Kinetics of Low Pressure Processing Plasmas
Alan Garscadden
OriginalPaper 28 February 2011 Pages: 127 - 139
An Investigation of the Cathode Fall
D. A. Doughty
J. E. Lawler
OriginalPaper 28 February 2011 Pages: 141 - 147
OES, LIF, and MS Studies of Silane, Disilane, and Chlorosilane Plasmas
H. U. Lee
R. C. Ross
J. P. De Neufville
OriginalPaper 28 February 2011 Pages: 149 - 154
Amorphous Hydrogenated Semiconductors
Jeffrey A. Reimer
OriginalPaper 28 February 2011 Pages: 157 - 166
Chemical and Mechanical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems
Jerzy Kanicki
Nancy Voke
OriginalPaper 28 February 2011 Pages: 167 - 173
Optical and Electrical Properties of Hydrogenated Amorphous Silicon Nitride Films Deposited in Various PECVD Systems
Nancy Voke
Jerzy Kanicki
OriginalPaper 28 February 2011 Pages: 175 - 181
Silicon Nitride from Microwave Plasma: Fabrication and Characterization
Yves Tessier
J. E. Klemberg-Sapieha
M. R. Wertheimer
OriginalPaper 28 February 2011 Pages: 183 - 189
Hydrogenated Amorphous Carbon(a-C:H), an Overview
Bernard S. Meyerson
OriginalPaper 28 February 2011 Pages: 191 - 198
Plasma Emission Spectroscopy and Chemical Analysis of Amorphous Hydrogenated Carbon
Chang Soo Park
Jeffrey R. Bodart
Bernard J. Feldman
OriginalPaper 28 February 2011 Pages: 199 - 204
Characterization of Hydrocarbon Plasma Used for a-C:H Deposition
J. Wagner
Ch. Wild
P. Koidl
OriginalPaper 28 February 2011 Pages: 205 - 210
Optical and Compositional Properties of a-C:H and BN Films
John J. Pouch
Samuel A. Alterovitz
Joseph D. Warner
OriginalPaper 28 February 2011 Pages: 211 - 216
Theoretical and Computational Problems in Modeling Glow Discharges
David B. Graves
Klavs F. Jensen
OriginalPaper 28 February 2011 Pages: 219 - 230
Monte Carlo Modeling of Ion Transport through RF Glow Discharge Sheaths
Donald A. Fisher
Brian E. Thompson
Herbert H. Sawin
OriginalPaper 28 February 2011 Pages: 231 - 236
Kinetic Modeling and Measurement of Active Species Distributions during Dry Etching
K. S. Uhm
M. R. Kump
R. W. Dutton
OriginalPaper 28 February 2011 Pages: 237 - 242
Continuum Modeling of Charged Particle Transport: RF Breakdown and Discharges of SF₆
Brian E. Thompson
Herbert H. Sawin
Aaron Owens
OriginalPaper 28 February 2011 Pages: 243 - 248
RIE Plasma and ETCH Mechanisms
John H. Keller
OriginalPaper 28 February 2011 Pages: 249 - 260
Reactive Ion Etchtng Model for Silicon Dioxide
Guadalupe Fortuño
OriginalPaper 28 February 2011 Pages: 261 - 266
Kinetics of Plasma Etching Silicon with Nitrogen Trifluoride
Harvey G. Stenger Jr.
G. S. Akiki
OriginalPaper 28 February 2011 Pages: 267 - 272
Plasma Etching of Si in SF₆/O₂ and NF₃/O₂ Mixtures: Computer Simulations and Experimental Results
Harold M. Anderson
Bradley K. Smith
Ron W. Light
OriginalPaper 28 February 2011 Pages: 273 - 280
Directional Plasma Etching of Polysilicon in SF₆/CFCl₃ Discharges
Michael T. Mocella
Brian E. Thompson
Herbert H. Sawin
OriginalPaper 28 February 2011 Pages: 281 - 286
Electron Energy Distribution Functions in RF Molecular Plasmas
M. Dilonardo
M. Capitelli
J. Wilhelm
OriginalPaper 28 February 2011 Pages: 287 - 292
A Plasma Chemistry and Surface Model for the Deposition of a–Si:H from RF Glow Discharges: A Study of Hydrogen Content
Mark J. Kushner
OriginalPaper 28 February 2011 Pages: 293 - 307
Homogeneous and Heterogeneous Chemistry of Methane Deposition Plasmas
W. O. Partlow
L. E. Kline
OriginalPaper 28 February 2011 Pages: 309 - 319
Deposition of Dielectric Films by Remote Plasma Enhanced CVD
G. Lucovsky
D. V. Tsu
R. J. Markunas
OriginalPaper 28 February 2011 Pages: 323 - 334
Characterization of Plasma-Enhanced Chemical Vapour Deposition of Silicon-Oxynitride
W. G. M. Van Den Hoek
OriginalPaper 28 February 2011 Pages: 335 - 342
Deposition of Titanilum Nitride Thin Films by Plasma Enhanced CVD and Reactive Sputtering
E. F. Gleason
D. W. Hess
OriginalPaper 28 February 2011 Pages: 343 - 349
Influence of Substrate Temperature on the Structure of TiN-Films
J. M. Molarius
A. S. Korhonen
E. Nykänen
OriginalPaper 28 February 2011 Pages: 351 - 356
Deposition of Aluminum Nitride Films Using RF Reactive Sputtering
N. Kumar
K. Pourrezaei
B. Singh
OriginalPaper 28 February 2011 Pages: 357 - 363
Anisotropic Dry Etching of SiO₂ on Si and Its Impact on Surface and Near-Surface Properties of the Substrate
G. S. Oehrlein
G. J. Coyle
Y. H. Lee
OriginalPaper 28 February 2011 Pages: 367 - 379
Reactive Ion Etching Damage to Shallow Junctions
I. W. Wu
R. H. Bruce
D. Braun
OriginalPaper 28 February 2011 Pages: 381 - 386
RIE-Induced Damage to Single Crystal Silicon Monitored with Nondestructive Thermal Waves
Patrice Geraghty
W. Lee Smith
OriginalPaper 28 February 2011 Pages: 387 - 393
Modification of the Electrical Properties of a GaAs Surface by Plasma Exposure
Moshe Oren
Stanley Zemon
OriginalPaper 28 February 2011 Pages: 395 - 400
Etching and Surface Modification of Polyimide in O₂-SF₆ Plasmas
M. Kogoma
G. Turban
OriginalPaper 28 February 2011 Pages: 401 - 406
Quartz Crystal Microbalance Studies of the Plasma-Assisted Etching of Polyimide and Tungsten Thin Films
F. Fracassi
J. W. Coburn
OriginalPaper 28 February 2011 Pages: 407 - 413

Volume 68, Issue 1

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