Volume 671, Issue 1

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December 2001

Symposium M — Chemical-Mechanical Polishing 2001—Advances and Future Challenges

Issue Editors:

S. V. Babu,
K. C. Cadien,
J. G. Ryan,
H. Yano

39 articles in this issue

Slurry Retention and Transport during Chemical-Mechanical Polishing of Copper
Anurag Jindal
Ying Li
S. V. Babu
OriginalPaper 18 March 2011 Article: 410
Multiprobe End-Point Detection for Precision Control of the Copper CMP Process
Thomas Laursen
Malcolm Grief
OriginalPaper 18 March 2011 Article: 76
Mechanisms of Post-CMP Cleaning
H. Liang
E. Estragnat
D. McMullen
OriginalPaper 18 March 2011 Article: 74
Polishing and Cleaning of Low K Dielectric Material for ild and Damascene
Yuchun Wang
Rajeev Bajaj
Li-Qun Xia
OriginalPaper 18 March 2011 Article: 73
Environmentally-benign cleaning for giga DRAM using electrolyzed water
Kunkul Ryoo
Byeongdoo Kang
OriginalPaper 18 March 2011 Article: 72
Effect of pH on Chemical-Mechanical Polishing of Copper and Tantalum
Anurag Jindal
Ying Li
S. V. Babu
OriginalPaper 18 March 2011 Article: 68
Direct Visualization of Particle Dynamics in Model CMP Geometries
Claudia M. Zettner
Minami Yoda
OriginalPaper 18 March 2011 Article: 66
Control of Pattern Specific Corrosion During Aluminum Chemical Mechanical Polishing
Hyungjun Kim
Panki Kwon
Chul-Woo Nam
OriginalPaper 18 March 2011 Article: 65
Engineered porous and coated Silica particulates for CMP applications
K. S. Choi
R. Vacassy
R. K. Singh
OriginalPaper 18 March 2011 Article: 58
A Characterization of New Cleaning Method Using Electrolytic Ionized Water for Poly Si CMP Process
N. Miyashita
Shin-ichiro Uekusa
T. Nishioka
OriginalPaper 18 March 2011 Article: 57
A CMP Numerical Model Combining Die Scale and Feature Scale Polishing Characteristics
Stéphanie Delage
Frank Meyer
Goetz Springer
OriginalPaper 18 March 2011 Article: 55
Layout Pattern Density and Oxide Deposition Profile Effects on Dielectrics CMP
Young B. Park
Joon Y. Kim
Dae W. Seo
OriginalPaper 18 March 2011 Article: 54
A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO₂ Slurry
Jong Won Lee
Bo Un Yoon
Joo Tae Moon
OriginalPaper 18 March 2011 Article: 53
CMP related/CMP revealed short- and long-range integration interactions in copper dual damascene technology
Yehiel Gotkis
Rodney Kistler
OriginalPaper 18 March 2011 Article: 52
Effects of Particle Concentration in CMP
Wonseop Choi
Seung-Mahn Lee
Rajiv K. Singh
OriginalPaper 18 March 2011 Article: 51
Wafer Nanotopography Effects on CMP: Experimental Validation of Modeling Methods
Brian Lee
Duane S. Boning
Michael Lacy
OriginalPaper 18 March 2011 Article: 49
Modeling the Effects of Polishing Pressure and Speed on CMP Rates
Ed Paul
OriginalPaper 18 March 2011 Article: 48
A Contact-Mechanics Based Model for Dishing and Erosion in Chemical-Mechanical Polishing
Joost J. Vlassak
OriginalPaper 18 March 2011 Article: 46
Direct Measurement of Planarization Length for Copper Chemical Mechanical Planarization Polishing (CMP) Processes Using a Large Pattern Test Mask
Paul Lefevre
Albert Gonzales
John Nguyen
OriginalPaper 18 March 2011 Article: 44
Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing Processes
Tamba Tugbawa
Tae Park
Lawrence Camilletti
OriginalPaper 18 March 2011 Article: 43
Modeling of Feature-Scale Planarization in STI CMP Using MESA™
Thomas Laursen
Inki Kim
Scott Runnels
OriginalPaper 18 March 2011 Article: 42
Fixed Abrasive Technology for STI CMP on a Web Format Tool
Alexander Simpson
Laertis Economikos
Adam Ticknor
OriginalPaper 18 March 2011 Article: 41
Characterization and Control of Copper CMP with Optoacoustic Metrology
Michael Gostein
Paul Lefevre
Michael Joffe
OriginalPaper 18 March 2011 Article: 39
A Study on STI and Damascene CMP using Chip Level Simulation
Kyung-Hyun Kim
Yoo-Hyon Kim
Sang-In Lee
OriginalPaper 18 March 2011 Article: 37
Analysis of CMP planarization performance for STI process
Manabu Tsujimura
Hisanori Matuo
Hirokuni Hiyama Ebara
OriginalPaper 18 March 2011 Article: 36
Analysis of Copper to Tantalum Transition in Copper CMP
J. M. Kang
S. Wu
P. D. Foo
OriginalPaper 18 March 2011 Article: 35
Copper CMP for Dual Damascene Technology: Some Considerations on the Mechanism of Cu Removal
David Wei
Yehiel Gotkis
Rodney Kistler
OriginalPaper 18 March 2011 Article: 33
Effect of Copper Film Surface Properties on CMP Removal Rate
Yuchun Wang
Rajeev Bajaj
Fritz Redeker
OriginalPaper 18 March 2011 Article: 32
Interplay Between Copper Electroplating and Chemical Mechanical Planarization
David K. Watts
Yusuke Chikamori
Akihisa Hongo
OriginalPaper 18 March 2011 Article: 31
Synthesis of Model Alumina Slurries for Damascene Patterning of Copper
Byung-Chan Lee
David J. Duquette
Ronald J. Gutmann
OriginalPaper 18 March 2011 Article: 27
Oxide Powders for Chemical Mechanical Polishing Produced by Chemical Vapor Synthesis
H. Sieger
M. Winterer
H. Hahn
OriginalPaper 18 March 2011 Article: 25
High-performance CMP Slurry with Inorganic/Resin Abrasive for Al/Low k Damascene
Hiroyuki Yano
Yukiteru Matsui
Masayuki Hattori
OriginalPaper 18 March 2011 Article: 24
An Evaluation on The Effects of Newly Designed Abrasives in CMP Slurry
Nobuo Kawahashi
Masayuki Hattori
OriginalPaper 18 March 2011 Article: 22
Evaluation of Mechanical and Tribological Behavior, and Surface Characteristics of CMP Pads
A. K. Sikder
I. M. Irfan
J. M. Anthony
OriginalPaper 18 March 2011 Article: 18
Polyurethane Pad Degradation and Wear Due to Tungsten and Oxide CMP
Amy L. Moy
Joseph L. Cecchi
David J. Stein
OriginalPaper 18 March 2011 Article: 17
Effects of Nano-scale Colloidal Abrasive Particle Size on SiO₂ by Chemical Mechanical Polishing
Chunhong Zhou
Lei Shan
S. Danyluk
OriginalPaper 18 March 2011 Article: 16
Resolving the Origin of a CMP-Associated Yield/Reliability Issue “Center Spike”- Film Thickness Bulge in the Wafer Center. Is CMP to Be Held Responsible for Its Appearance?
David Wei
Yehiel Gotkis
Rodney Kistler
OriginalPaper 18 March 2011 Article: 15
Rotational Averaging of Material Removal During CMP
David R. Evans
Michael R. Oliver
OriginalPaper 18 March 2011 Article: 14
Why abrasive free Cu slurry is promising?
Yasuo Kamigata
Yasushi Kurata
Masanobu Hanazono
OriginalPaper 18 March 2011 Article: 13

Volume 671, Issue 1

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