Volume 669, Issue 1

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December 2001

Symposium J — Si Front-End Processing—Physics and Technology of Dopant-Defect Interactions III

Issue Editors:

M. A. Foad,
M. D. Giles,
K. S. Jones,
J. Matsuo,
P. Stolk

48 articles in this issue

Defect Evolution from Low Energy, Amorphizing, Germanium Implants on Silicon
Andres F. Gutierrez
Kevin S. Jones
Daniel F. Downey
OriginalPaper 21 March 2011 Article: 511
Modeling of Annealing of High Concentration Arsenic Profiles
Paevl Fastenko
Scott T. Dunham
Graeme Henkelman
OriginalPaper 21 March 2011 Article: 510
Modeling of Boron Implantation Into Si With Decaborane Ions
Zinetulla Insepov
Marek Sosnowski
Isao Yamada
OriginalPaper 21 March 2011 Article: 419
Accurate Modeling of Residual recoil-mixing during SIMS Measurements
Ming Hong Yang
Robert Odom
OriginalPaper 21 March 2011 Article: 416
Evolution Of Defects Induced By High Energy He Implantation In Gold-Diffused Silicon
R. El Bouayadi
G. Regula
E. Ntsoenzok
OriginalPaper 21 March 2011 Article: 414
Diffusion of Implanted Nitrogen in Silicon at High Doses
Lahir Shaik Adam
Lance Robertson
Omer Dokumaci
OriginalPaper 21 March 2011 Article: 310
Photoluminescence study of defects induced by B₁₀H₁₄ ions
Noriaki Toyoda
Takaaki Aoki
Lionel C. Kimerling
OriginalPaper 21 March 2011 Article: 204
Atomistic simulations of extrinsic defects evolution and transient enhanced diffusion in silicon
A. Claverie
B. Colombeau
C. Bonafos
OriginalPaper 21 March 2011 Article: 94
Atomistic Modeling of Amorphization in Silicon
Lourdes Pelaz
Luis A. Marqués
Juan Barbolla
OriginalPaper 21 March 2011 Article: 93
Modeling of Dopant Defect Interactions
C. Camarce
L. Radic
M. E. Law
OriginalPaper 21 March 2011 Article: 91
Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial Regrowth
C. D. Lindfors
K. S. Jones
M. J. Rendon
OriginalPaper 21 March 2011 Article: 85
Reverse Diode Leakage in Spike-Annealed Ultra-Shallowjunctions
Hans-Joachim
L. Gossmann
Leonard M. Rubin
OriginalPaper 21 March 2011 Article: 84
Influence of low thermal budget pre-anneals on the high temperature redistribution of low energy boron implants in silicon
F. Boucard
M. Schott
E. Guichard
OriginalPaper 21 March 2011 Article: 83
Carbon Diffusion and Clustering in SiGeC Layers Under Thermal Oxidation
D. De Salvador
E. Napolitani
L. Lazzarini
OriginalPaper 21 March 2011 Article: 68
Silicon Interstitial Driven Loss of Substitutional Carbon from SiGeC Structures
M. S. Carroll
J. C. Sturm
D. J. Tweet
OriginalPaper 21 March 2011 Article: 67
Modeling Boron and Indium Electrical Activities in Silicon in the Presence of Nitrogen
Vladimir Zubkov
Sheldon Aronowitz
Juan P. Senosiain
OriginalPaper 21 March 2011 Article: 65
Diffusion and Defect Structure in Nitrogen Implanted Silicon
Omer Dokumaci
Richard Kaplan
Mark E. Law
OriginalPaper 21 March 2011 Article: 64
Determining the Ratio of the Precipitated versus Substituted Arsenic by XAFS and SIMS in Heavy Dose Arsenic Implants in Silicon
M. A. Sahiner
S. W. Novak
V. Krishnamoorty
OriginalPaper 21 March 2011 Article: 58
Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon
R. Brindos
M. H. Clark
E. Andideh
OriginalPaper 21 March 2011 Article: 57
A New Kinetic Model for The Nucleation and Growth of Self-Interstitial Clusters in Silicon
Christophe J. Ortiz
Daniel Mathiot
OriginalPaper 21 March 2011 Article: 56
Lattice site location of ultra-shallow implanted B in Si using ion beam analysis
Hajime Kobayashi
Ichiro Nomachi
Fumitaka Nishiyama
OriginalPaper 21 March 2011 Article: 53
Effect of Arsenic on Extended Defect Evolution in Silicon
R. Brindos
K. S. Jones
M. E. Law
OriginalPaper 21 March 2011 Article: 52
Effect of the Ge preamorphisation dose on the thermal evolution of End of Range defects
B. Colombeau
F. Cristiano
A. Claverie
OriginalPaper 21 March 2011 Article: 48
Computer Simulation of Decaborane Implantation into Silicon, Annealing and Re-crystallization of Silicon
Zinetulla Insepov
Isao Yamada
OriginalPaper 21 March 2011 Article: 47
Ab-Initio Modeling of C-B Interactions In Si
Chun-Li Liu
Wolfgang Windl
Xiang-Yang Liu
OriginalPaper 21 March 2011 Article: 46
Characterization of Damage Induced by Cluster Ion Implantation
Takaaki Aoki
Jiro Matsuo
Gikan Takaoka
OriginalPaper 21 March 2011 Article: 45
Modeling Threading Dislocation Loop Nucleation and Evolution in MeV Boron Implanted Silicon
Ibrahim Avci
Mark E. Law
Rainer Thoma
OriginalPaper 21 March 2011 Article: 44
Vacancy and oxygen behavior in carbon highly doped silicon
Pierre Lavéant
Peter Werner
Ulrich Goesele
OriginalPaper 21 March 2011 Article: 43
Antimony and Boron Diffusion in Silicon and Silicon Germanium under the Influence of Point Defects Injection by Rapid Thermal Anneal
Aihua Dan
Arthur F. W. Willoughby
Terry J. Ormsby
OriginalPaper 21 March 2011 Article: 42
Nonmelt Laser Annealing of 1 Kev Boron Implanted Silicon
Susan Earles
Mark Law
Sean Corcoran
OriginalPaper 21 March 2011 Article: 41
Implant Dose and Spike Anneal Temperature Relationships
K. K. Bourdelle
A. T. Fiory
S. P. McCoy
OriginalPaper 21 March 2011 Article: 41
Laser Thermal Induced Crystallization for 20 nm Device Structures
Shenzhi Yang
Michael O. Thompson
OriginalPaper 21 March 2011 Article: 40
Phosphorus diffusion in silicon; influence of annealing conditions
J. S. Christensen
A. Yu Kuznetsov
B. G. Svensson
OriginalPaper 21 March 2011 Article: 39
A Study of the Deactivation of High Concentration, Laser Annealed Dopant Profiles in Silicon
Yayoi Takamura
Sameer Jain
James D. Plummer
OriginalPaper 21 March 2011 Article: 39
A Quantitative Model of the Electrical Activity of Metal Silicide Precipitates in Silicon Based on the Schottky Effect
Teh Y. Tan
Pavel S. Plekhanov
OriginalPaper 21 March 2011 Article: 38
Use of isotopically pure silicon material to estimate silicon diffusivity in silicon dioxide
D. Tsoukalas
C. Tsamis
P. Normand
OriginalPaper 21 March 2011 Article: 37
A Comprehensive Model for Carbon Suppression of Boron Transient Enhanced Diffusion
Julie L. Ngau
Peter B. Griffin
James D. Plummer
OriginalPaper 21 March 2011 Article: 37
The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon
Mark H. Clark
Kevin S. Jones
Ebrahim Andideh
OriginalPaper 21 March 2011 Article: 36
Boron Segregation and Electrical Properties in Polycrystalline SiGeC
E. J. Stewart
M. S. Carroll
J. C. Sturm
OriginalPaper 21 March 2011 Article: 36
Shallow Junctions for Sub-100 Nm Cmos Technology
Veerle Meyssen
Peter Stolk
Nick Cowern
OriginalPaper 21 March 2011 Article: 35
A new model for Boron diffusion retardation in SiGe-strained layers accounting for the mechanism of Boron trapping/detrapping by Ge atoms
Victor I. Kol’dyaev
OriginalPaper 21 March 2011 Article: 34
Self-Diffusion in Intrinsic and Extrinsic Silicon Using Isotopically Pure ³⁰Silicon Layer
Yukio Nakabayashi
Hirman I. Osman
Takao Abe
OriginalPaper 21 March 2011 Article: 33
SPV Monitoring of Near Surface Doping - Role of Boron-Hydrogen Interaction; Boron Passivation and Reactivation
D. Marinskiy
J. Lagowski
OriginalPaper 21 March 2011 Article: 25
Demonstration of the state-of-the-art of formation and characterization of ultra-shallow junctions
P. Borden
A. Al-Bayati
A. Mayur
OriginalPaper 21 March 2011 Article: 24
Conductance Imaging of the Depletion Region of Biased Silicon PN Junction Device
Jeong Young Park
R. J. Phaneuf
E. D. Williams
OriginalPaper 21 March 2011 Article: 23
SSRM and SCM observation of modified lateral diffusion of As, BF2 and Sb induced by nitride spacers.
P. Eyben
N. Duhayon
G. Badenes
OriginalPaper 21 March 2011 Article: 22
Advanced Ion Implantation Technology for High Performance Transistors
Kyoichi Suguro
Atsushi Murakoshi
Katsuya Okumura
OriginalPaper 21 March 2011 Article: 13
Doping process issues for Sub-0.1μm generation MOSFETs
Toshihiro Sugii
Sergey Pidin
Masatak Kase
OriginalPaper 21 March 2011 Article: 12

Volume 669, Issue 1

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