Volume 664, Issue 1 | MRS Online Proceedings Library

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Volume 664, Issue 1

December 2000

Symposium A — Amorphous and Heterogeneous Silicon-Based Films-2001

Issue Editors:

J. B. Boyce,
J. D. Cohen,
R. W. Collins,
J. Hanna,
M. Stutzmann

142 articles in this issue

Hydrogen Diffusion Duringc Amorphous Silicon Growth and Its Consequences for the Transition to Nanocrystalline Growth
Richard S. Crandall
Jack Thiesen
OriginalPaper 01 December 2000 Article: 2721
Porous silicon thin film gas sensor
I. Ferreira
E. Fortunato
R. Martins
OriginalPaper 01 December 2000 Article: 2671
Microcrystalline Germanium Photodetectors
M. Krause
H. Stiebig
H. Wagner
OriginalPaper 01 December 2000 Article: 2651
Electromechanical properties of amorphous and microcrystalline silicon micromachined structures
J. Gaspar
M. Boucinha
J. P. Conde
OriginalPaper 01 December 2000 Article: 2641
Photocapacitance of Hydrogenated Amorphous Silicon Phototransistors
D. Caputo
G. de Cesare
M. Tucci
OriginalPaper 01 December 2000 Article: 2631
Density of States in a-Si:H from SCLC and Its Application in Modeling a Vertical TFT
Naser Sedghi
Bill Eccleston
OriginalPaper 01 December 2000 Article: 2621
High Electron Mobility TFTs of Nanocrystalline Silicon Deposited at 150°oC on Plastic Foil
I-Chun Cheng
Sigurd Wagner
Stephen J. Fonash
OriginalPaper 01 December 2000 Article: 2611
Solar Cell Performance Under Different Illumination Conditions
Christian Gemmer
Markus B. Schubert
OriginalPaper 01 December 2000 Article: 2591
Preparation Temperature Effects in Microcrystalline Silicon Thin Film Solar Cells
O. Vetterl
A. Dasgupta
H. Wagner
OriginalPaper 01 December 2000 Article: 2581
Microcrystalline silicon solar cells prepared by 13.56 MHz PECVD at high growth rates: Solar cell and material properties
Tobias Roschek
Bernd Rech
Robert Beserman
OriginalPaper 01 December 2000 Article: 2551
Effects of low-temperature annealing on the initial and stabilized performance of amorphous silicon solar cells
D. Carlson
G. Ganguly
G. Lin
OriginalPaper 01 December 2000 Article: 2541
Correlation between film and cell properties for DC plasma deposited amorphous silicon
Jennifer Heath
Suman B. Iyer
Gautam Ganguly
OriginalPaper 01 December 2000 Article: 2531
Annealing Kinetics of Amorphous Silicon Alloy Solar Cells Made at Various Deposition Rates
Baojie Yana
Jeffrey Yanga
Subhendu Guha
OriginalPaper 01 December 2000 Article: 2521
Microcrystalline Germanium Carbide: A New, Almost Direct Gap, Thin Film Material for Photovoltaic Energy Conversion
Vikram L. Dalal
Jason T. Herrold
OriginalPaper 01 December 2000 Article: 2512
Controlling the Lateral Photoeffect in a-Si:H Heterojunction Structures: The Influence of the Band Offset Analysed Through A Numerical Simulation
A. Fantoni
M. Fernandes
M. Vieira
OriginalPaper 01 December 2000 Article: 2511
Carrier transport and photogeneration in large area p-i-n Si/SiC heterojunctions
P. Louro
Yu. Vygranenko
M. Schubert
OriginalPaper 01 December 2000 Article: 2510
Excimer Laser Recrystallization of Selectively Floating a-Si Active Layer for Large-Grained Poly-Si Film
Cheon-Hong Kim
Juhn-Suk Yoo
Min-Koo Han
OriginalPaper 01 December 2000 Article: 611
Electrical Properties and Defect States of Laser Crystallized Polycrystalline Silicon Films
Tadashi Watanabe
Nobuyuki Andoh
Toshiyuki Sameshima
OriginalPaper 01 December 2000 Article: 610
Low-Temperature (630°C) Epitaxy of Silicon on Seeded Glass by Ion-Assisted Deposition
Armin G. Aberle
Nils-Peter Harder
Stefan Oelting
OriginalPaper 01 December 2000 Article: 511
Evidence for Long-range Hydrogen Motion in a-Si:H under Room-temperature Illumination Using Raman Scattering of Amorphous Tungsten Oxide Overlayer
Hyeonsik M. Cheong
Se-Hee Lee
Sayten K. Deb
OriginalPaper 01 December 2000 Article: 285
Metastable changes of the electrical conductivity in microcrystalline silicon
N. H. Nickel
M. Rakel
OriginalPaper 01 December 2000 Article: 283
Determination of the Mobile-Hydrogen Charge State in Hydrogenated Amorphous Silicon
Brent P. Nelsona
Yueqin Xu
Howard M. Branz
OriginalPaper 01 December 2000 Article: 282
Basic mechanisms of structural relaxation and diffusion in amorphous silicon
G. T. Barkema
Normand Mousseau
Parthapratim Biswas
OriginalPaper 01 December 2000 Article: 281
Proton NMR and Magnetic Susceptibility in a-Si:H
Jonathan Baugh
Daxing Han
Yue Wu
OriginalPaper 01 December 2000 Article: 274
Control of Medium Range Order in Amorphous Silicon via Ion and Neutral Bombardment
Jennifer E. Gerbi
Paul M. Voyles
J. R. Abelson
OriginalPaper 01 December 2000 Article: 273
Hydrogenated Amorphous Silicon / ZnO Shottky Heterojunction for Position Sensitive Detectors
H. ǵuas
P. Nunes
R. Martins
OriginalPaper 01 December 2000 Article: 266
A Novel Poly-Si Solar Cell using Grain Boundary Etching Treatment and Transparent Conducting Oxide
Dong Gun Lim
Wook Jae Lee
Junsin Yi
OriginalPaper 01 December 2000 Article: 257
Guiding Principle to Develop Intrinsic Microcrystalline Silicon Absorber Layer For Solar Cell By Hot-Wire Cvd
A. R. Middya
U. Weber
B. Schroeder
OriginalPaper 01 December 2000 Article: 256
Integrated Optical and Electrical Modeling of a-Si:H Based Solar Cells
Miro Zeman
René A. C. M. M. van Swaaij
Wim Metselaar
OriginalPaper 01 December 2000 Article: 251
Optical Simulations of the Effects of Transparent Conducting Oxide Interface Layers on Amorphous Silicon Solar Cell Performance
Gelio M. Ferreira
Andre S. Ferlauto
Robert W. Collins
OriginalPaper 01 December 2000 Article: 246
Silicon Thin Film Deposition on Nano-Structured ZnO Substrates
R. Könenkamp
V. Chu
L. Dloczik
OriginalPaper 01 December 2000 Article: 245
Importance of Defect Density near the p-i Interface for a-Si:H Solar Cell Performance
B. A. Korevaar
C. Smit
M. C. M. Van de Sanden
OriginalPaper 01 December 2000 Article: 244
Charge carrier transport in a-Si:H/c-Si heterojunctions
Susanne von Aichberger
Frank Wünsch
Marinus Kunst
OriginalPaper 01 December 2000 Article: 241
Generation- Recombination Noise in Amorphous Semiconductors
Charlie Main
Steve Reynolds
Rashad I. Badran
OriginalPaper 01 December 2000 Article: 237
Increasing the Dark Conductivity Activation Energy in Undoped Microcrystalline Silicon by Post-Growth Anneals
Jong-Hwan Yoon
OriginalPaper 01 December 2000 Article: 236
Study of Electrical Properties of Microcrystalline Silicon Films Using AC Measurements
Ely A. T. Dirani
Alexandre M. Nardes
Reginaldo Muccillo
OriginalPaper 01 December 2000 Article: 235
Electronic transport study of high deposition rate HWCVD a-Si:H by the microwavephotomixing technique
S. R. Sheng
R. Braunstein
Y. Xu
OriginalPaper 01 December 2000 Article: 234
Structural and Optical Features of Nano-Crystalline Silicon Films Prepared by PECVD and RF Magnetron Sputter Techniques
M. B. Park
N. H. Cho
OriginalPaper 01 December 2000 Article: 233
The Determination of Optoelectronic Properties of Microcrystalline andAmorphous Silicon Films
Marinus Kunst
Susanne von Aichberger
Frank Wünsch
OriginalPaper 01 December 2000 Article: 232
Properties of silicon films deposited under argon dilution
C. Longeaud
D. Roy
L. Saviot
OriginalPaper 01 December 2000 Article: 231
Effect of Experimental Noise on Recovery of the Electronic Density of States from Transient Photocurrent Data
Steve Reynolds
Charlie Main
Mariana J. Gueorguieva
OriginalPaper 01 December 2000 Article: 226
Study of Defects in Hydrogenated Amorphous Silicon by Constant Photocurrent Method and Positron Annihilation
A. Amaral
G. Lavareda
A. P. de Lima
OriginalPaper 01 December 2000 Article: 225
Ex situ and in situ defect density measurements of a-Si:H by means of the cavity ring down absorption technique
A. H. M. Smets
J. H. Van de Helden
M. C. M. Van de Sanden
OriginalPaper 01 December 2000 Article: 224
Orientation-Dependence of Low Temperature Epitaxial Silicon Growth
Thomas A. Wagner
Lars Oberbeck
Ralf B. Bergmann
OriginalPaper 01 December 2000 Article: 223
Sensitization of the Holes Lifetime by the Addition of Dangling Bonds in a-Si:H
L. F. Fonseca
S. Z. Weisz
I. Balberg
OriginalPaper 01 December 2000 Article: 222
Vibrational Stretching Modes of the Si-H and Si-D Bonds in Amorphous Silicon Nitride
Shu-Ya Lin
OriginalPaper 01 December 2000 Article: 215
Photoluminescence Study of Self-Limiting Oxidation in Nanocrystalline Silicon Quantum Dots
Kenta Arai
Junichi Omachi
Shunri Oda
OriginalPaper 01 December 2000 Article: 206
Surface Derivatization of Amorphous Silicon by Grignard Reagents
Takashi Ehara
Arata Maruyama
OriginalPaper 01 December 2000 Article: 204
Structural Changes in Amorphous Silicon Annealed at Low Temperatures
Branko Pivac
Pavo Dubček
Ivan Zulim
OriginalPaper 01 December 2000 Article: 199
Electrical Stability of a-Si:H TFTs Fabricated at 150°C
H. Gleskova
S. Wagner
OriginalPaper 01 December 2000 Article: 197