Volume 613, Issue 1

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December 2000

Symposium E — Chemical-Mechanical Polishing 2000 - Fundamentals…

Issue Editors:

R. Bajaj,
M. Meuris,
M. Moinpour,
R. K. Singh

22 articles in this issue

Planarization of Copper Damascene Interconnects by Spin-Etch Process: A Chemical Approach
Shyama P. Mukherjee
Joseph A. Levert
Donald S. DeBear
OriginalPaper 01 August 2000 Article: 8101
Optical Characterization of Porous Membranes
Claudia Mujat
Lorrene Denney
Aristide Dogariu
OriginalPaper 01 August 2000 Article: 6101
Using Wafer-Scale Patterns for CMP Analysis
Brian Lee
Terence Gan
Thomas H. Osterheld
OriginalPaper 01 August 2000 Article: 1181
Removal Rate, Uniformity and Defectivity Studies of Chemical Mechanical Polishing of BPSG Films
Benjamin A. Bonner
Boris Fishkin
Thomas H. Osterheld
OriginalPaper 01 August 2000 Article: 861
Technique of surface control with the Electrolyzed D.I.water for post CMP cleaning
Mitsuhiko Shirakashi
Kenya Itoh
Yoshitaka Matsui
OriginalPaper 01 August 2000 Article: 831
Fundamental Study of Iodate and Iodine Based Slurries for Copper CMP
Seung-Mahn Lee
Uday Mahajan
Rajiv K. Singh
OriginalPaper 01 August 2000 Article: 781
An Evaluation of the Effects of Benzotriazole in NH₄OH Slurry for Copper CMP
V. S. C. Len
D. W. Mcneill
H. S. Gamble
OriginalPaper 01 August 2000 Article: 741
Dynamic Mechanical Analysis (DMA) of CMP pad materials
Irene Li
Kersten M. Forsthoefel
Alvaro Maury
OriginalPaper 01 August 2000 Article: 731
Interfacial Fluid Pressure and Its Effects on SiO₂ Chemical Mechanical Polishing
C. Zhou
L. Shan
S. Danyluk
OriginalPaper 01 August 2000 Article: 711
Performance of Polishing Slurries containing Silica Particles grown by Sol-Gel Method
Sun Hyuk Bae
Jae-Hyun So
Do Hyun Kim
OriginalPaper 01 August 2000 Article: 651
An Image Analysis Technique for Assessing Particle Size and Agglomeration Tendency of Slurries
Susan R. Machinski
Kathleen A. Richardson
Aristide Dogariu
OriginalPaper 01 August 2000 Article: 611
The characteristics of the Electrolyzed D.I.water with chemicals and the outline of the supply system
Mitsuhiko Shirakashi
Kenya Itoh
Yoshitaka Matsui
OriginalPaper 01 August 2000 Article: 541
A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process
Naoto Miyashita
Shin-ichiro Uekusa
Satoko Iwami
OriginalPaper 01 August 2000 Article: 531
Improvement of Wafer Edge Profile and CMP Performance Through the Floating Head Design
Huey-Ming Wang
Gerry Moloney
Sesinando Deguzman
OriginalPaper 01 August 2000 Article: 511
Multi-Level Damascene Process Development: Aluminum CMP
David A. Hansen
Gerry Moloney
Alex Reyes
OriginalPaper 01 August 2000 Article: 431
A Novel Single Step Lapping and Chemo-Mechanical Polishing Scheme for Antimonide Based Semiconductors Using 1 μm Agglomerate-Free Alumina Slurry
P. S. Dutta
R. J. Gutmann
L. Sweet
OriginalPaper 01 August 2000 Article: 411
Chemical Wear of Cu CMP
Hong Liang
OriginalPaper 01 August 2000 Article: 251
Planarization of Cu and Ta Using Silica and Alumina Abrasives — A Comparison
Y. Li
S. Ramarajan
S. V. Babu
OriginalPaper 01 August 2000 Article: 241
Fundamental Studies on the Mechanisms of Oxide CMP
Uday Mahajan
Seung-Mahn Lee
Rajiv K. Singh
OriginalPaper 01 August 2000 Article: 171
Modeling on Mechanical Properties of Polishing Pads in CMP Process
Takeshi Nishioka
Satoko Iwami
Naoto Miyashita
OriginalPaper 01 August 2000 Article: 151
A Model of Chemical Mechanical Polishing
Ed Paul
OriginalPaper 01 August 2000 Article: 141
The Effect of Wafer Shape on Slurry Film Thickness and Friction Coefficients in Chemical Mechanical Planarization
Joseph Lu
Jonathan Coppeta
Frank Kaufmanc
OriginalPaper 01 August 2000 Article: 121

Volume 613, Issue 1

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