Volume 612, Issue 1 | MRS Online Proceedings Library

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Volume 612, Issue 1

December 2000

Symposium D — Materials, Technology & Reliability for Advanced Interconnects

Issue Editors:

K. Maex,
Y. C. Joo,
G. S. Oehrlein,
S. Ogawa,
J. T. Wetzel

77 articles in this issue

Stress, Microstructure and Temperature Stability of Reactive Sputter Deposited WN_x Thin Films
K. D. Leedy
M. J. O’Keefe
J. T. Grant
OriginalPaper 01 August 2000 Article: 9201
Organic Solution Deposition of Copper Seed Layers onto Barrier Metals
H. Gu
R. Fang
R. Cortez
OriginalPaper 01 August 2000 Article: 9191
Study of Ta as a Diffusion Barrier in Cu/SiO₂ Structure
J. S. Pan
A. T. S. Wee
J. H. Zhang
OriginalPaper 01 August 2000 Article: 9181
Studies of Copper Surfaces modified by Thermal and Plasma Treatments
G. P. Beyer
M. Baklanov
K. Maex
OriginalPaper 01 August 2000 Article: 9171
Evolution of Surface Morphology During Cu(TMVS)(hfac) Sourced Copper CVD
Daewon Yang
Jongwon Hong
Timothy S. Cale
OriginalPaper 01 August 2000 Article: 9161
High Density Plasma Silicon Carbide as a Barrier/Etch Stop Film for Copper Damascene Interconnects
Hichem M’Saad
Seon-Mee Cho
Zhuang Li
OriginalPaper 01 August 2000 Article: 9141
A Comparative Study of Ti/Low-k HSQ (Hydrogen Silsesquioxane) and Ti/TEOS (Tetraethylorthosilicate) Structures at Elevated Temperatures
Yuxiao Zeng
Linghui Chen
T. L. Alford
OriginalPaper 01 August 2000 Article: 9131
Volatile Liquid Precursors for the Chemical Vapor Deposition (CVD) of Thin Films Containing Tungsten
Roy G. Gordon
Seán Barry
Ying Wang
OriginalPaper 01 August 2000 Article: 9121
The Integration of Low-k Dielectric Material Hydrogen Silsesquioxane (HSQ) with Nitride Thin Films as Barriers
Yuxiao Zeng
Linghui Chen
T. L. Alford
OriginalPaper 01 August 2000 Article: 9111
Electromigration-Induced Stress Interaction between Via and Polygranular Cluster
Young-Joon Park
In-Suk Choi
Young-Chang Joo
OriginalPaper 01 August 2000 Article: 8111
Planarization of Copper Damascene Interconnects by Spin-Etch Process: A Chemical Approach
Shyama P. Mukherjee
Joseph A. Levert
Donald S. Debear
OriginalPaper 01 August 2000 Article: 8101
Sol-Gel Derived Silica Layers for Low-k Dielectrics Applications
Sylvie Acosta
André Ayral
Mehdi Moussavi
OriginalPaper 01 August 2000 Article: 5261
Processing, Characterization and Reliability of Silica Xerogel Films for Interlayer Dielectric Applications
Anurag Jain
Svetlana Rogojevic
William Lanford
OriginalPaper 01 August 2000 Article: 5251
Grazing Incidence Small Angle X-Ray Scattering Study on Low Dielectric Thin Films
C. H. Hsu
Hsin-Yi Lee
C. Jin
OriginalPaper 01 August 2000 Article: 5231
A Three-phase Model for the Structure of Porous Thin Films Determined by X-ray Reflectivity and Small-Angle Neutron Scattering
Wen-li Wu
Eric K. Lin
Jeffrey T. Wetzel
OriginalPaper 01 August 2000 Article: 5221
Ultra Low-K Inorganic Silsesquioxane Films with Tunable Electrical and Mechanical Properties
Thomas A. Deis
Chandan Saha
Jeff Bremmer
OriginalPaper 01 August 2000 Article: 5181
Photo-Induced Growth of Low Dielectric Constant Porous Silica Film at Room Temperature
Jun-Ying Zhang
Ian W. Boyd
OriginalPaper 01 August 2000 Article: 5171
Microstructure and Electronic Properties of Thin Film Nanoporous Silica as a Function of Processing and Annealing Methods
Christine Caragianis-Broadbridge
John R. Miecznikowski
Ann Hein Lehman
OriginalPaper 01 August 2000 Article: 5161
Low Dielectric Constant Porous Silsesquioxane Films: Effect of Thermal Treatment
Y. K. Siew
G. Sarkar
A. See
OriginalPaper 01 August 2000 Article: 5151
Characterization and Integration in Cu Damascene Structures of AURORA, an Inorganic Low-k Dielectric
R. A. Donaton
B. Coenegrachts
K. Maex
OriginalPaper 01 August 2000 Article: 5141
Curing Study of Hydrogen Silsesquioxane Under H₂/N₂ Ambient
Huey-Chiang Liou
Evan Dehate
Fred Dall
OriginalPaper 01 August 2000 Article: 5121
Study of Dry Photoresist Stripping Processes for Hydrogen Silsesquioxane Thin Films
Huey-Chiang Liou
Jerry Duel
Ricky Ruffin
OriginalPaper 01 August 2000 Article: 5111
Structural Analyses of Fluorine-Doped Silicon Dioxide Dielectric Thin Films by Micro-Raman Spectroscopy
Jeffery L. Coffer
T. Waldek Zerda
Scott Martin
OriginalPaper 01 August 2000 Article: 5101
A New Poly-Si CMP Process with Small Erosion for Advanced Trench Isolation Process
Naoto Miyashita
Shin-ichiro Uekusa
Satoko Iwami
OriginalPaper 01 August 2000 Article: 1131
Technique of surface control with the Electrolyzed D.I.water for post CMP cleaning
Mitsuhiko Shirakashi
Kenya Itoh
Yoshitaka Matsui
OriginalPaper 01 August 2000 Article: 1121
Nanoscale Elastic Imaging of Aluminum/Low-k Dielectric Interconnect Structures
G. S. Shekhawat
O. V. Kolosov
R. E. Geer
OriginalPaper 01 August 2000 Article: 1071
Microtexture and Strain in Electroplated Copper Interconnects
R. Spolenak
D. L. Barr
J. R. Patel
OriginalPaper 01 August 2000 Article: 1031
The Effects of the Mechanical Properties of the Confinement Material on Electromigration in Metallic Interconnects
Stefan P. Hau-Riege
Carl V. Thompson
OriginalPaper 01 August 2000 Article: 1021
Room Temperature Recrystallization of Electroplated Copper Thin Films: Methods and Mechanisms
D. Walther
M. E. Gross
P. Naresh
OriginalPaper 01 August 2000 Article: 1011
Kinetics Model for the Self-Encapsulation of Ag/Al Bilayers
Y. Wang
T. L. Alford
J. W. Mayer
OriginalPaper 01 August 2000 Article: 971
Formation of Al_xO_yN_z Barriers for Advanced Silver Metallization
Y. Wang
T. L. Alford
OriginalPaper 01 August 2000 Article: 961
Deposition of Smooth Thin Cu Films in Deep Submicron Trench by Plasma CVD Reactor with H Atom Source
Masaharu Shiratani
Hong Jie Jin
Yukio Watanabe
OriginalPaper 01 August 2000 Article: 921
Trench and Via Filling with Electroplated Copper: Effect of Current Density and Pulse Waveform
C. H. Seah
S. Mridha
L. H. Chan
OriginalPaper 01 August 2000 Article: 911
The Influence of Stress-Induced Voiding on the Electromigration Behavior of AlCu Interconnects
A. E. Zitzelsberger
A. H. Fischer
OriginalPaper 01 August 2000 Article: 891
Grain Orientation and Strain Measurements in Sub-Micron wide Passivated Individual Aluminum Test Structures
N. Tamura
B. C. Valek
J. R. Patel
OriginalPaper 01 August 2000 Article: 881
Experimental Studies of the Reliability of Interconnect Trees
S. P. Hau-Riege
C. V. Thompson
OriginalPaper 01 August 2000 Article: 871
Strain Measurements from Single Grains in Passivated Aluminum Conductor Lines by X-Ray Microdiffraction During Electromigration
K. J. Hwang
G. S. Cargill III
T. Marieb
OriginalPaper 01 August 2000 Article: 861
Localized Measurement of Strains in Damascene Copper Interconnects by Convergent-Beam Electron Diffraction
Julie A. Nucci
Robert R. Keller
Mihal E. Gross
OriginalPaper 01 August 2000 Article: 851
Backside Copper Contamination Issues in CMOS Process Integration–A Case Study
K. Prasad
K. C. Tee
A. K. See
OriginalPaper 01 August 2000 Article: 841
Integrated CVD-PVD Al Plug Process for Sub-Quarter Micron Devices: Effects of Underlayer on the Via Filling and the Microstructure of the Al Film
Won-Jun Lee
Jung Joo Kim
Sa-Kyun Rha
OriginalPaper 01 August 2000 Article: 811
Microstructural Analysis of Copper Interconnections Using Picosecond Ultrasonics
James M. E. Harper
Sandra G. Malhotra
Humphrey J. Maris
OriginalPaper 01 August 2000 Article: 751
Reliability of Tantalum Based Diffusion Barriers between Cu and Si
Tomi Laurila
Kejun Zeng
Jorma K. Kivilahti
OriginalPaper 01 August 2000 Article: 741
Tantalum-Nitride Diffusion Barrier Studies Using the Transient-Ion-Drift Technique for Copper Detection
T. Heiser
C. Brochard
M. Swaanen
OriginalPaper 01 August 2000 Article: 731
Fabrication and Performance Limits of Sub-0.1 µm Cu Interconnects
T. S. Kuan
C. K. Inoki
C. Cabral
OriginalPaper 01 August 2000 Article: 711
The 2,2,6,6-Tetramethyl-2-Sila-3,5-Heptanedione Route to the Chemical Vapor Deposition of Copper for Gigascale Interconnect Applications
Rolf U. Claessen
John T. Welch
Alain E. Kaloyeros
OriginalPaper 01 August 2000 Article: 681
A Study on CVD TaN as a Diffusion Barrier for Cu Interconnects
Se-Joon Im
Soo-Hyun Kim
Ki-Bum Kim
OriginalPaper 01 August 2000 Article: 671
Properties of Tin Thin Films Deposited by ALCVD as Barrier for Cu Metallization
Alessandra Satta
Gerald Beyer
A. Vantomme
OriginalPaper 01 August 2000 Article: 651
Atomic Layer CVD for Continuously Shrinking Devices
Suvi Haukka
Kai-Erik Elers
Marko Tuominen
OriginalPaper 01 August 2000 Article: 641
Seed-layer Deposition for Sub 0.25 µm Cu Metallization Using a Line Cusp Magnetron Plasma Source
Sunil Wickramanayaka
Hanako Nagahama
Yoichiro Numasawa
OriginalPaper 01 August 2000 Article: 631
High-Temperature Mechanical Behavior and Phase Morphology of Poly(Tetrafluoroethylene)/Siloxane Nanocomposites Used as Ultra Low-k Dielectrics
Ping Xu
Shichun Qu
Min Y. Lin
OriginalPaper 01 August 2000 Article: 581